P-type chalcogenide and N-type silicon heterojunction infrared photodiodes and method of manufacturing thereof

Patent metadata

Field	Value
Publication number	US-9954133-B1
Application number	US-201715406566-A
Country	US
Kind code	B1
Filing date	Jan 13, 2017
Priority date	Jan 15, 2016
Publication date	Apr 24, 2018
Grant date	Apr 24, 2018

Abstract

A photodetector comprising a region of a p-type phase-change chalcogenide material forming a heterojunction with a region of n-type Silicon; wherein the p-type phase-change chalcogenide material comprises one of GeTe and SbTe.

First claim

What is claimed is:

1. A photodetector comprising:
a region of a p-type phase-change chalcogenide material forming a heterojunction with a region of n-type Silicon;
wherein the p-type phase-change chalcogenide material comprises one of GeTe and SbTe.

2. The photodetector of claim 1 , wherein the region of p-type phase-change chalcogenide material has a thickness comprised between 0.2 μm and 1 μm.

3. The photodetector of claim 1 , wherein the photodetector operates in the near-IR and short-wave IR spectral ranges.

4. The photodetector of claim 1 , wherein:
the region of p-type phase-change chalcogenide material comprises a bottom surface in contact with a top surface of the region of n-type Silicon;
a portion of a bottom surface of the region of n-type Silicon being in contact with a first electrode; and
a portion of a top surface of the region of p-type phase-change chalcogenide material being in contact with a second electrode.

5. The photodetector of claim 4 , wherein the region of p-type phase-change chalcogenide material comprises lateral sides surrounded by a dielectric material region, said second electrode being in contact with a portion of a top surface of said dielectric material region.

6. The photodetector of claim 4 , wherein at least the portion of the top surface of the region of p-type phase-change chalcogenide material that is not in contact with the second electrode is covered by an anti-reflection coating.

7. The photodetector of claim 6 , wherein the anti-reflection coating comprises Ge or ZnSe.

8. The photodetector of claim 4 , wherein a portion of the bottom surface of the region of n-type Silicon comprises an integrated circuit electrically connected to said first electrode.

9. The photodetector of claim 8 , wherein said second electrode is electrically connected to said integrated circuitry by an isolated via.

10. The photodetector of claim 8 , wherein the bottom surface of the region of n-type Silicon is covered by a dielectric layer.

11. The photodetector of claim 10 , wherein said dielectric layer comprises at least one conductor electrically connected to said integrated circuit.

12. The photodetector of claim 10 , wherein a bottom surface of said dielectric layer is attached to a carrier wafer.

Assignees

• Hrl Lab Llc

Inventors

• Moon Jeong-Sun
• Seo Hwa Chang

Classifications

• H01L31/0336

  Electricity · mapped topic

• H01L31/109 Primary

  Electricity · mapped topic

• H01L45/06

  Electricity · mapped topic

• H01L45/144

  Electricity · mapped topic

• H01L31/1892

  Electricity · mapped topic