Antifuse array and method of forming antifuse using anodic oxidation

Patent metadata

Field	Value
Publication number	US-9953989-B2
Application number	US-201414527885-A
Country	US
Kind code	B2
Filing date	Oct 30, 2014
Priority date	Mar 31, 2014
Publication date	Apr 24, 2018
Grant date	Apr 24, 2018

Abstract

A method for forming an antifuse on a substrate is provided, which comprises: forming a first conductive material on the substrate; placing the first conductive material in an electrolytic solution; performing anodic oxidation on the first conductive material to form a nanowire made of the first conductive material and surrounded by a first dielectric material formed during the anodic oxidation and to form the antifuse on the nanowire; and forming a second conductive material on the antifuse to sandwich the antifuse between the first conductive material and the second conductive material.

First claim

What is claimed is:

1. A method for forming an antifuse on a substrate, comprising:
forming a first conductive material on the substrate;
performing anodic oxidation on the first conductive material, wherein the anodic oxidation forms a nanowire having a shape of a wire or a rod, the nanowire being made of the first conductive material and being substantially surrounded by a first dielectric material formed during the anodic oxidation, the antifuse comprising a portion of the first dielectric material on the nanowire;
forming a first portion of a second conductive material on the antifuse to sandwich the antifuse between the first conductive material and the first portion of the second conductive material;
removing portions of the first dielectric material to expose two terminals of the nanowire; and
forming a second portion of the second conductive material on each terminal of the two terminals of the nanowire.

2. The method of claim 1 , wherein forming the first portion of the second conductive material on the antifuse to sandwich the antifuse between the first conductive material and the first portion of the second conductive material further comprises forming the first conductive material and the first portion of the second conductive material in a configuration selected from the group consisting of: the first portion of the second conductive material in a second layer over the first conductive material in a first layer in a T-shape as viewed from above; and the first portion of the second conductive material in a second layer over the first conductive material in a first layer in an approximately cross-shaped relationship as viewed from above.

3. The method of claim 1 , wherein performing anodic oxidation on the first conductive material further comprises placing the first conductive material in an electrolytic solution.

4. The method of claim 1 , wherein forming the antifuse on the nanowire further comprises forming the first dielectric material by using a material having dielectric strength of about 10 MV/m to about 1000 MV/m.

5. The method of claim 1 , wherein forming the first conductive material on the substrate further comprises forming the first conductive material by using at least one of silicon and metal.

6. The method of claim 1 , wherein forming the first portion of the second conductive material on the antifuse further comprises forming the first portion of the second conductive material by using at least one of silicon and metal.

7. The method of claim 1 , wherein forming the first conductive material on the substrate further comprises forming the first conductive material having a width of about 5 nm to about 100 nm.

8. The method of claim 1 , wherein forming the first conductive material on the substrate further comprises forming the first conductive material having a height of about 5 nm to about 500 nm.

9. A method for forming an antifuse on a substrate, comprising:
forming a first conductive material on the substrate;
performing anodic oxidation on the first conductive material to form a nanowire made of the first conductive material and substantially surrounded by a first dielectric material formed during the anodic oxidation forming the antifuse on the nanowire;
forming a first portion of a second conductive material on the antifuse to sandwich the antifuse between the first conductive material and the first portion of the second conductive material;
removing portions of the first dielectric material to expose two terminals of the nanowire; and
forming a second portion of the second conductive material on each terminal of the two terminals nanowire.

10. The method of claim 9 , wherein forming the first portion of the second conductive material on the antifuse to sandwich the antifuse between the first conductive material and the first portion of the second conductive material further comprises forming the first conductive material and the first portion of the second conductive material in a configuration selected from the group consisting of: the first portion of the second conductive material in a second layer over the first conductive material in a first layer in a T-shape as viewed from above; the first portion of the second conductive material in a second layer over the first conductive material in a first layer in an approximately cross-shaped relationship as viewed from above.

11. The method of claim 9 , wherein performing anodic oxidation on the first conductive material further comprises placing the first conductive material in an electrolytic solution.

12. The method of claim 9 , wherein forming the antifuse on the nanowire further comprises forming the first dielectric material by using a material having dielectric strength of about 10 MV/m to about 1000 MV/m.

13. The method of claim 9 , wherein forming the first conductive material on the substrate further comprises forming the first conductive material by using at least one of silicon and metal.

14. The method of claim 9 , wherein forming the first portion of the second conductive material on the antifuse further comprises forming the first portion of the second conductive material by using at least one of silicon and metal.

15. The method of claim 9 , wherein forming the first conductive material on the substrate further comprises forming the first conductive material having a width of about 5 nm to about 100 nm.

16. The method of claim 9 , wherein forming the first conductive material on the substrate further comprises forming the first conductive material having a height of about 5 nm to about 500 nm.

17. A method for forming an antifuse on a substrate, comprising:
forming a first conductive material on the substrate;
performing anodic oxidation on the first conductive material, wherein the anodic oxidation forms (i) a nanowire having a shape of a wire or a rod and being made of the first conductive material, and (ii) the antifuse made of a first dielectric material;
forming a first portion of a second conductive material on the antifuse to sandwich the antifuse between the first conductive material and the first portion of the second conductive material;
removing portions of the first dielectric material to expose two terminals of the nanowire; and
forming a second portion of the second conductive material on each terminal of the two terminals nanowire.

18. A method for forming an antifuse on a substrate, comprising:
forming a protrusion comprising a first conductive material on the substrate;
performing anodic oxidation on the protrusion, wherein the anodic oxidation forms a nanowire having a shape of a wire or a rod, the nanowire comprising the first conductive material inside the protrusion and being surrounded by a dielectric material formed during the anodic oxidation, the antifuse comprising a portion of the dielectric material;
forming a first portion of a second conductive material on the antifuse to sandwich the antifuse between the first conductive material and the first portion of the second conductive material;
removing portions of the dielectric material to expose two terminals of the nanowire; and
forming a second portion of the second conductive material on each terminal of the terminals nanowire.

19. The method of claim 1 , further comprising:
prior to the performing of the anodic oxidation, forming a mask on the first conductive material, wherein the mask protects the first conductive material during the performing of the anodic oxidation.

Assignees

• Taiwan Semiconductor Mfg Co Ltd
• Univ Nat Taiwan
• Taiwan Semiconductor Manufacturing Company Limited And National Taiwan Univ

Inventors

• Hwu Jenn-Gwo
• Tian Wei-Cheng
• Pan Samuel C
• Wang Chao-Hsiung
• Liu Chi-Wen

Classifications

• H10P14/6324

  Formation by anodic treatments, e.g. anodic oxidation · CPC title

• H10W20/0554

  of nanotubes or nanowires · CPC title

• H10W20/065

  by making at least a portion of the conductive part non-conductive, e.g. by oxidation · CPC title

• H10W20/031

  of conductive parts of the interconnections · CPC title

• H10W20/491 Primary

  Antifuses, i.e. interconnections changeable from non-conductive to conductive · CPC title