Method of providing a flexible semiconductor device and flexible semiconductor device thereof

Patent metadata

Field	Value
Publication number	US-9953951-B2
Application number	US-201615349511-A
Country	US
Kind code	B2
Filing date	Nov 11, 2016
Priority date	May 13, 2014
Publication date	Apr 24, 2018
Grant date	Apr 24, 2018

Abstract

Some embodiments include a method. The method can comprise: providing a carrier substrate; providing an adhesion modification layer over the carrier substrate; providing a device substrate; and coupling the device substrate and the carrier substrate together, the adhesion modification layer being located between the device substrate and the carrier substrate when the device substrate and the carrier substrate are coupled together. In these embodiments, the adhesion modification layer can be configured so that the device substrate couples indirectly with the carrier substrate by way of the adhesion modification layer with a first bonding force that is greater than a second bonding force by which the device substrate couples with the carrier substrate absent the adhesion modification layer. Other embodiments of related methods and devices are also disclosed.

First claim

What is claimed is:

1. A method comprising:
providing a carrier substrate;
providing an adhesion modification layer over the carrier substrate;
providing a device substrate;
after providing the adhesion modification layer over the carrier substrate, coupling the device substrate and the carrier substrate together, the adhesion modification layer being located between the device substrate and the carrier substrate when the device substrate and the carrier substrate are coupled together;
providing one or more semiconductor elements over the device substrate while the device substrate and the carrier substrate are coupled together; and
after providing the one or more semiconductor elements over the device substrate while the device substrate and the carrier substrate are coupled together, mechanically decoupling the device substrate from the carrier substrate;
wherein:
the adhesion modification layer is configured so that the device substrate couples indirectly with the carrier substrate by way of the adhesion modification layer with a first bonding force that is greater than a second bonding force by which the device substrate couples with the carrier substrate absent the adhesion modification layer;
mechanically decoupling the device substrate from the carrier substrate occurs without lowering the first bonding force and without lowering the second bonding force in order to perform the mechanically decoupling the device substrate from the carrier substrate; and
the adhesion modification layer remains at the device substrate after the device substrate is mechanically decoupled from the carrier substrate.

2. The method of claim 1 wherein:
coupling the device substrate and the carrier substrate together comprises bonding the device substrate directly to the adhesion modification layer.

3. The method of claim 1 wherein:
providing the adhesion modification layer over the carrier substrate comprises:
before coupling the device substrate and the carrier substrate together, etching a central portion of the adhesion modification layer so that only a perimeter portion of the adhesion modification layer remains over the carrier substrate.

4. The method of claim 1 wherein:
providing the adhesion modification layer over the carrier substrate comprises providing the adhesion modification layer over substantially all of a surface of the carrier substrate.

5. The method of claim 1 wherein:
the carrier substrate comprises a rigid substrate; and
the device substrate comprises a flexible substrate.

6. The method of claim 1 wherein:
the adhesion modification layer comprises amorphous silicon.

7. The method of claim 1 further comprising:
providing an adhesive;
wherein:
coupling the device substrate and the carrier substrate together comprises bonding the device substrate to the adhesion modification layer with the adhesive.

8. The method of claim 7 wherein:
the adhesive comprises an acrylate polymer adhesive.

9. The method of claim 7 wherein:
less than approximately five percent of the adhesive remains at the device substrate immediately after the device substrate is mechanically decoupled from the carrier substrate.

10. The method of claim 7 wherein:
none of the adhesive remains at the device substrate immediately after the device substrate is mechanically decoupled from the carrier substrate.

11. The method of claim 5 wherein:
the rigid substrate comprises at least one of alumina, silicon, glass, metal, or sapphire.

12. The method of claim 5 wherein:
the flexible substrate comprises at least one of polyethylene naphthalate, polyethylene terephthalate, polyethersulfone, polyimide, polycarbonate, cyclic olefin copolymer, liquid crystal polymer, or glass.

13. The method of claim 5 wherein:
the rigid substrate comprises at least one of alumina, silicon, glass, metal, or sapphire; and
the flexible substrate comprises at least one of polyethylene naphthalate, polyethylene terephthalate, polyethersulfone, polyimide, polycarbonate, cyclic olefin copolymer, liquid crystal polymer, or glass.

14. The method of claim 1 wherein:
the rigid substrate is devoid of silicon.

15. The method of claim 1 wherein:
the rigid substrate is devoid of amorphous silicon.

16. The method of claim 1 wherein:
providing the adhesion modification layer over the carrier substrate comprises providing the adhesion modification layer with a thickness of greater than or equal to approximately 0.05 micrometer and less than or equal to approximately 25 micrometers over the carrier substrate.

17. A method comprising:
providing a carrier substrate;
providing an adhesion modification layer over the carrier substrate;
providing a device substrate;
after providing the adhesion modification layer over the carrier substrate, coupling the device substrate and the carrier substrate together, the adhesion modification layer being located between the device substrate and the carrier substrate when the device substrate and the carrier substrate are coupled together;
providing one or more semiconductor elements over the device substrate while the device substrate and the carrier substrate are coupled together; and
after providing the one or more semiconductor elements over the device substrate while the device substrate and the carrier substrate are coupled together, mechanically decoupling the device substrate from the carrier substrate;
wherein:
the carrier substrate is a first single layer of a first homogenous material;
the adhesion modification layer is a second single layer of a second homogenous material;
the device substrate is a third single layer of a third homogenous material;
the adhesion modification layer is configured so that the device substrate couples indirectly with the carrier substrate by way of the adhesion modification layer with a first bonding force that is greater than a second bonding force by which the device substrate couples with the carrier substrate absent the adhesion modification layer;
mechanically decoupling the device substrate from the carrier substrate occurs without lowering the first bonding force and without lowering the second bonding force in order to perform the mechanically decoupling the device substrate from the carrier substrate; and
the adhesion modification layer remains at the device substrate after the device substrate is mechanically decoupled from the carrier substrate.

18. The method of claim 17 wherein:
providing the adhesion modification layer over the carrier substrate comprises:
before coupling the device substrate and the carrier substrate together, etching a central portion of the adhesion modification layer so that only a perimeter portion of the adhesion modification layer remains over the carrier substrate when subsequently coupling the device substrate and the carrier substrate together.

19. The method of claim 18 wherein:
the adhesion modification layer comprises amorphous silicon.

20. The method of claim 18 wherein:
the carrier substrate is devoid of silicon.

Assignees

• Howard Emmett
• Munizza Nicholas
• Yee Paul
• Marrs Michael
• Univ Arizona State

Inventors

• Howard Emmett
• Munizza Nicholas
• Yee Paul
• Marrs Michael

Classifications

• H10P72/7448

  the bond interface between the auxiliary support and the wafer comprising two or more, e.g. multilayer adhesive or adhesive and release layer · CPC title

• H10P72/7426

  used as a support during build up manufacturing of active devices · CPC title

• H10P72/7412

  the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support · CPC title

• H10P72/744

  Details of chemical or physical process used for separating the auxiliary support from a device or a wafer · CPC title

• H10P72/74 Primary

  using temporarily an auxiliary support · CPC title