Semiconductor structure and manufacturing method thereof

Patent metadata

Field	Value
Publication number	US-9953936-B2
Application number	US-201514928651-A
Country	US
Kind code	B2
Filing date	Oct 30, 2015
Priority date	Oct 30, 2015
Publication date	Apr 24, 2018
Grant date	Apr 24, 2018

Abstract

A semiconductor structure includes a transceiver configured to communicate with a device, a molding surrounding the transceiver, a via extending through the molding, an insulating layer disposed over the molding, the via and the transceiver, and a redistribution layer (RDL) disposed over the insulating layer and comprising an antenna and a dielectric layer surrounding the antenna, wherein a portion of the antenna is extended through the insulating layer and the molding to electrically connect with the transceiver.

First claim

What is claimed is:

1. A semiconductor structure, comprising:
a transceiver configured to communicate with a device;
a molding surrounding the transceiver;
a via extending through the molding;
an insulating layer disposed over the molding, the via and the transceiver; and
a redistribution layer (RDL) disposed over the insulating layer and comprising an antenna and a dielectric layer surrounding the antenna, wherein a portion of the antenna is extended through the insulating layer and the molding and is electrically connected with the transceiver.

2. The semiconductor structure of claim 1 , wherein the via is configured to inductively coupled with the antenna.

3. The semiconductor structure of claim 1 , wherein the via is in spiral, loop, rectangular, circular or polygonal configuration.

4. The semiconductor structure of claim 1 , wherein the via has a depth of about 100 um to about 200 um.

5. The semiconductor structure of claim 1 , wherein the antenna has a resonance frequency of about 2.4 GHz.

6. The semiconductor structure of claim 1 , wherein the antenna is configured to transmit or receive a signal in a Bluetooth low energy (BLE) or in a predetermined electromagnetic frequency of about 2.4 GHz.

7. The semiconductor structure of claim 1 , wherein the antenna has a length of about 200 um and a width of about 10 um.

8. The semiconductor structure of claim 1 , wherein the insulating layer has a thickness of about 3 um to about 5 um.

9. The semiconductor structure of claim 1 , wherein the antenna is configured to transmit a signal reaching a distance of greater than about 8 meters.

10. The semiconductor structure of claim 1 , further comprising a charger surrounded by the molding and configured to convert a charging power from AC to DC.

11. The semiconductor structure of claim 1 , further comprising a resonator configured to generate a signal to the charger.

12. The semiconductor structure of claim 1 , wherein the antenna comprise a first elongated portion extending over the insulating layer and a first via portion extending through the insulating layer.

13. The semiconductor structure of claim 12 , wherein the RDL further comprises at least one interconnect structure disposed in the dielectric layer.

14. The semiconductor structure of claim 13 , wherein the interconnect structure comprises a second elongated portion extending over the insulating layer and a second via portion extending through the insulating layer.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Chen Vincent
• Kuo Hung-Yi
• Wang Chuei-Tang
• Tsai Hao-Yi
• Yu Chen-Hua
• Chen Wei-Ting
• Tseng Ming Hung
• Lin Yen-Liang

Classifications

• H10W74/111

  the semiconductor body being completely enclosed · CPC title

• H10W74/142

  the encapsulations exposing the passive side of the semiconductor body · CPC title

• H10W72/9413

  on encapsulations · CPC title

• H10W44/248

  for antennas · CPC title

• H10W70/60

  Insulating or insulated package substrates; Interposers; Redistribution layers (leadframes H10W70/40) · CPC title