Electrically conductive interconnect including via having increased contact surface area

Patent metadata

Field	Value
Publication number	US-9953915-B2
Application number	US-201615364634-A
Country	US
Kind code	B2
Filing date	Nov 30, 2016
Priority date	Nov 5, 2014
Publication date	Apr 24, 2018
Grant date	Apr 24, 2018

Abstract

An interconnect structure includes a first dielectric layer and a second dielectric layer each extending along a first axis to define a height and a second axis opposite the first axis to define a length. A capping layer is interposed between the first dielectric layer and the second dielectric layer. At least one electrically conductive feature is embedded in at least one of the first dielectric layer and the second dielectric layer. At least one electrically conductive via extends through the second dielectric layer and the capping layer. The via has an end that contacts the conductive feature. The end includes a flange having at least one portion extending laterally along the first axis to define a contact area between the via and the at least one conductive feature.

First claim

What is claimed is:

1. An interconnect structure, comprising:
a first dielectric layer and a second dielectric layer each extending along a first axis to define a height and a second axis opposite the first axis to define a length;
a capping layer interposed between the first dielectric layer and the second dielectric layer, the capping layer including an upper surface formed directly against a lower surface of the second dielectric layer;
at least one electrically conductive feature formed in at least one of the first dielectric layer and the second dielectric layer; and
at least one electrically conductive via extending through the second dielectric layer and the capping layer, and having an end that contacts the at least one electrically conductive feature, the end including a narrow via portion and a contact flange, the narrow via portion extending parallel with respect to the first axis, the contact flange having at least one portion extending laterally away from the via along the second axis and perpendicular to the narrow via portion to define a contact area between the via and the at least one conductive feature, the contact area including an upper contact surface extending perpendicular to the narrow via portion, the upper contact surface extending parallel with the lower surface of the second dielectric layer to make contact therewith, the upper contact surface further being located completely beneath the lower surface of the second dielectric layer,
wherein the contact area has a curve-shaped lower portion that directly contacts the at least one conductive feature and having a width extending along the second axis that is greater than a width of the narrow via portion extending along the second axis.

2. The interconnect structure of claim 1 , wherein the contact flange is interposed between the first dielectric layer and the second dielectric layer.

3. The interconnect structure of claim 2 , wherein the contact flange is formed in only the contact area without extending through the at least one conductive feature.

4. The interconnect structure of claim 3 , wherein the contact area is formed in the capping layer without extending into the at least one conductive feature.

5. The interconnect structure of claim 4 , wherein a portion of the contact flange is disposed against the second dielectric layer.

6. The interconnect structure of claim 5 , further comprising a metal film layer on the via, the metal film layer configured to inhibit metal ions from diffusing into the first dielectric layer, the second dielectric layer and the capping layer.

7. The interconnect structure of claim 6 , wherein the via and the at least one conductive feature comprise a metal material.

8. The interconnect structure of claim 7 , wherein the capping layer comprises a dielectric material, and wherein the first and second dielectric layers comprises a low-k dielectric material different from the first dielectric material of the capping layer.

9. The interconnect structure of claim 8 , wherein an upper surface of the via is flush with an upper surface of the metal film layer.

10. An interconnect structure, comprising:
a first dielectric layer and a second dielectric layer each extending along a first axis to define a height and a second axis opposite the first axis to define a length;
a capping layer interposed between the first dielectric layer and the second dielectric layer;
at least one electrically conductive feature formed in at least one of the first dielectric layer and the second dielectric layer; and
at least one electrically conductive via extending through the second dielectric layer and the capping layer, and having an end that contacts the at least one electrically conductive feature, the end including a narrow via portion and a contact flange, the narrow via portion extending parallel with respect to the first axis, the contact flange having at least one portion extending laterally away from the via along the second axis and perpendicular to the narrow via portion to define a contact area between the via and the at least one conductive feature, the contact area including a an upper contact surface extending perpendicular to the narrow via portion, the upper contact surface contacting the lower surface of the second dielectric layer,
wherein the contact area has a curve-shaped lower portion that directly contacts the at least one conductive feature and having a width extending along the second axis that is greater than a width of the narrow via portion extending along the second axis, and
wherein a portion of the contact area is aligned beneath the second dielectric layer.

11. The interconnect structure of claim 10 , wherein the contact flange is interposed between the first dielectric layer and the second dielectric layer.

12. The interconnect structure of claim 11 , wherein the contact flange is formed in only the contact area without extending through the at least one conductive feature.

13. The interconnect structure of claim 12 , wherein the contact area is formed in the capping layer without extending into the at least one conductive feature.

14. The interconnect structure of claim 13 , wherein a portion of the contact flange is disposed against the second dielectric layer.

15. The interconnect structure of claim 14 , further comprising a metal film layer on the via, the metal film layer configured to inhibit metal ions from diffusing into the first dielectric layer, the second dielectric layer and the capping layer.

16. The interconnect structure of claim 15 , wherein the via and the at least one conductive feature comprise a metal material.

17. The interconnect structure of claim 16 , wherein the capping layer comprises a dielectric material, and wherein the first and second dielectric layers comprises a low-k dielectric material different from the first dielectric material of the capping layer.

18. The interconnect structure of claim 17 , wherein an upper surface of the via is flush with an upper surface of the metal film layer.

Assignees

• IBM

Inventors

• Chen Hsueh-Chung
• Demarest James J
• Teehan Sean
• Yang Chih-Chao

Classifications

• H10W20/435

  Cross-sectional shapes or dispositions of interconnections · CPC title

• H10W20/425

  Barrier, adhesion or liner layers · CPC title

• H10W20/089

  using processes for implementing desired shapes or dispositions of the openings, e.g. double patterning · CPC title

• H10W20/48

  Insulating materials thereof · CPC title

• H10W20/47

  comprising two or more dielectric layers having different properties, e.g. different dielectric constants · CPC title