Lead-free low-melting glass composition, low-temperature sealing glass frit, low-temperature sealing glass paste, conductive material, and conductive glass paste containing glass composition, and glass-sealed component and electric/electronic component prepared using the same

Patent metadata

Field	Value
Publication number	US-9950948-B2
Application number	US-201715598674-A
Country	US
Kind code	B2
Filing date	May 18, 2017
Priority date	Aug 29, 2014
Publication date	Apr 24, 2018
Grant date	Apr 24, 2018

Abstract

An Ag 2 O—V 2 O 5 —TeO 2 lead-free low-melting glass composition that is prevented or restrained from crystallization by heating so as to soften and flow more satisfactorily at a low temperature contains a principal component which includes a vanadium oxide, a tellurium oxide and a silver oxide; a secondary component which includes at least one selected from the group consisting of BaO, WO 3 and P 2 O 5 ; and an additional component which includes at least one selected from the group consisting of oxides of elements in Group 13 of periodic table. A total component of the principal component is 85 mole percent or more in terms of V 2 O 5 , T e O 2 and Ag 2 O. Contents of TeO 2 and Ag 2 O each is 1 to 2 times as much as a content of V 2 O 5 . A content of the secondary component is 0 to 13 mole percent. A content of the additional component is 0.1 to 3.0 mole percent.

First claim

What is claimed is:

1. A lead-free low-melting glass composition comprising:
a principal component which includes a vanadium oxide, a tellurium oxide and a silver oxide; and
an additional component which includes at least one selected from the group consisting of oxides of elements in Group 13 of periodic table,
wherein a content of TeO 2 is 1 to 2 times as much as a content of V 2 O 5 , and
wherein a content of the additional component is 0.1 to 3.0 mole percent.

2. The lead-free low-melting glass composition according to claim 1 , further comprising an optional secondary component which includes at least one selected from the group consisting of BaO, WO 3 and P 2 O 5 , wherein the content of V 2 O 5 is 17 to 27 mole percent.

3. The lead-free low-melting glass composition according to claim 1 ,
wherein a content of the optional secondary component is 0 to 13 mole percent.

4. The lead-free low-melting glass composition according to claim 1 ,
wherein the content of V 2 O 5 is 17 to 27 mole percent,
the content of TeO 2 is 34 mole percent or more, and
a content of Ag 2 O is more than 0 mole percent and up to 40 mole percent.

5. The lead-free low-melting glass composition according to claim 1 ,
wherein the additional component includes at least one selected from the group consisting of B 2 O 3 , Al 2 O 3 , Ga 2 O 3 and In 2 O 3 , and
wherein the content of the additional component is 0.1 to 2.0 mole percent in terms of oxide.

6. The lead-free low-melting glass composition according to claim 1 ,
having a softening point of 280° C. or lower, the softening point being determined by differential thermal analysis as a second endothermic peak temperature.

7. The lead-free low-melting glass composition according to claim 6 ,
having a crystallization onset temperature higher than the softening point by 60° C. or more, the crystallization onset temperature being determined by the differential thermal analysis.

8. A low-temperature sealing glass frit comprising:
the lead-free low-melting glass composition according to claim 1 ; and
low-thermal-expansion ceramic particles,
wherein a content of the lead-free low-melting glass composition is 40 or more volume percent and less than 100 volume percent, and
a content of the low-thermal-expansion ceramic particles is greater than 0 volume percent and 60 or less volume percent.

9. The low-temperature sealing glass frit according to claim 8 ,
wherein the low-thermal-expansion ceramic particles include at least one selected from the group consisting of zirconium phosphate tungstate, quartz glass, zirconium silicate, aluminum oxide, mullite and niobium oxide.

10. A low-temperature sealing glass paste comprising:
particles formed of the lead-free low-melting glass composition according to claim 1 ;
low-thermal-expansion ceramic particles; and
a solvent.

11. The low-temperature sealing glass paste according to claim 10 ,
wherein the low-thermal-expansion ceramic particles include at least one selected from the group consisting of zirconium phosphate tungstate, quartz glass, zirconium silicate, aluminum oxide, mullite and niobium oxide, and
wherein the solvent includes at least one of α-terpineol and diethylene glycol n-butyl ether acetate.

12. A conductive material comprising:
the lead-free low-melting glass composition according to claim 1 ; and
metal particles,
wherein a content of the lead-free low-melting glass composition is 5 or more volume percent and less than 100 volume percent, and
a content of the metal particles is greater than 0 volume percent and 95 or less volume percent.

13. The conductive material according to claim 12 ,
wherein the metal particles include at least one selected from the group consisting of silver, silver alloys, copper, copper alloys, aluminum, aluminum alloys, tin and tin alloys.

14. A conductive glass paste comprising:
particles formed of the lead-free low-melting glass composition according to claim 1 ; and
a solvent.

15. The conductive glass paste according to claim 14 , further comprising metal particles.

16. The conductive glass paste according to claim 15 ,
wherein the metal particles include at least one selected from the group consisting of silver, silver alloys, copper, copper alloys, aluminum, aluminum alloys, tin and tin alloys.

17. The conductive glass paste according to claim 14 ,
wherein the solvent includes at least one of α-terpineol and diethylene glycol n-butyl ether acetate.

18. A glass-sealed component having a seal portion including 40 to 100 volume percent of a lead-free low-melting glass phase,
wherein the lead-free low-melting glass phase includes a principal component including a vanadium oxide, a tellurium oxide and a silver oxide,
a content of TeO 2 is 1 to 2 times as much as a content of V 2 O 5 , and
wherein the lead-free low-melting glass phase further includes an additional component including at least one selected from the group consisting of B 2 O 3 , Al 2 O 3 , Ga 2 O 3 and In 2 O 3 , and
a content of the additional component in the lead-free low-melting glass phase is 0.1 to 2.0 mole percent.

19. The glass-sealed component according to claim 18 ,
being one of a vacuum-insulating double glass panel and a display panel.

20. An electrical/electronic component comprising at least one unit selected from the group consisting of electrodes, interconnections, and conductive junctions,
wherein the unit includes 5 or greater volume percent and less than 100 volume percent of a lead-free low-melting glass phase, and greater than 0 volume percent and 95 or less volume percent of metal particles,
the lead-free low-melting glass phase including a principal component, a secondary component and an additional component,
wherein the principal component includes a vanadium oxide, a tellurium oxide and a silver oxide,
a content of TeO 2 being 1 to 2 times as much as a content of V 2 O 5 , and
wherein the additional component includes at least one selected from the group consisting of B 2 O 3 , Al 2 O 3 , Ga 2 O 3 and In 2 O 3 , and
a content of the additional component in the lead-free low-melting glass phase being 0.1 to 2.0 mole percent,
the metal particles including at least one selected from the group consisting of silver, silver alloys, copper, copper alloys, aluminum, aluminum alloys, tin and tin alloys.

Assignees

• Hitachi Chemical Co Ltd

Inventors

• Naito Takashi
• Tachizono Shinichi
• Yoshimura Kei
• Hashiba Yuji
• Aoyagi Takuya
• Onodera Taigo
• Miyake Tatsuya

Classifications

• H10W90/724

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H01B1/14

  Conductive material dispersed in non-conductive inorganic material · CPC title

• H01L41/053

  Electricity · mapped topic

• C03C3/122

  containing oxides of As, Sb, Bi, Mo, W, V, Te as glass formers · CPC title

• C09D5/24

  Electrically-conducting paints {(conductive materials H01B1/00)} · CPC title