Lead-free low-melting glass composition, low-temperature sealing glass frit, low-temperature sealing glass paste, conductive material, and conductive glass paste containing glass composition, and glass-sealed component and electric/electronic component prepared using the same

Patent metadata

Field	Value
Publication number	US-9670090-B2
Application number	US-201514834386-A
Country	US
Kind code	B2
Filing date	Aug 24, 2015
Priority date	Aug 29, 2014
Publication date	Jun 6, 2017
Grant date	Jun 6, 2017

Abstract

An Ag 2 O—V 2 O 5 —TeO 2 lead-free low-melting glass composition that is prevented or restrained from crystallization by heating so as to soften and flow more satisfactorily at a low temperature contains a principal component which includes a vanadium oxide, a tellurium oxide and a silver oxide; a secondary component which includes at least one selected from the group consisting of BaO, WO 3 and P 2 O 5 ; and an additional component which includes at least one selected from the group consisting of oxides of elements in Group 13 of periodic table. A total component of the principal component is 85 mole percent or more in terms of V 2 O 5 , TeO 2 and Ag 2 O. Contents of TeO 2 and Ag 2 O each is 1 to 2 times as much as a content of V 2 O 5 . A content of the secondary component is 0 to 13 mole percent. A content of the additional component is 0.1 to 3.0 mole percent.

First claim

What is claimed is:

1. A lead-free low-melting glass composition comprising:
a principal component which includes a vanadium oxide, a tellurium oxide and a silver oxide;
an optional secondary component which includes at least one selected from the group consisting of BaO, WO 3 and P 2 O 5 ; and
an additional component which includes at least one selected from the group consisting of oxides of elements in Group 13 of periodic table,
wherein a total content of the principal component is 85 mole percent or more in terms of V 2 O 5 , TeO 2 and Ag 2 O,
contents of TeO 2 and Ag 2 O each is 1 to 2 times as much as a content of V 2 O 5 , and
wherein a content of the secondary component is 0 to 13 mole percent, and
a content of the additional component is 0.1 to 3.0 mole percent.

2. The lead-free low-melting glass composition according to claim 1 ,
wherein the additional component includes at least one selected from the group consisting of B 2 O 3 , Al 2 O 3 , Ga 2 O 3 and In 2 O 3 , and
wherein the content of the additional component is 0.1 to 2.0 mole percent in terms of oxide.

3. The lead-free low-melting glass composition according to claim 1 ,
having a softening point of 280° C. or lower, the softening point being determined by differential thermal analysis as a second endothermic peak temperature.

4. The lead-free low-melting glass composition according to claim 3 ,
having a crystallization onset temperature higher than the softening point by 60° C. or more, the crystallization onset temperature being determined by the differential thermal analysis.

5. A low-temperature sealing glass frit comprising:
the lead-free low-melting glass composition according to claim 1 ; and
low-thermal-expansion ceramic particles,
wherein a content of the lead-free low-melting glass composition is 40 or more volume percent and less than 100 volume percent, and
a content of the low-thermal-expansion ceramic particles is greater than 0 volume percent and 60 or less volume percent.

6. The low-temperature sealing glass frit according to claim 5 ,
wherein the low-thermal-expansion ceramic particles include at least one selected from the group consisting of zirconium phosphate tungstate, quartz glass, zirconium silicate, aluminum oxide, mullite and niobium oxide.

7. The low-temperature sealing glass frit according to claim 5 ,
wherein the low-thermal-expansion ceramic particles is formed of at least one of zirconium phosphate tungstate and a compound including mainly zirconium phosphate tungstate, and
wherein the content of the low-thermal-expansion ceramic particles is 30 to 50 volume percent.

8. A low-temperature sealing glass paste comprising:
particles formed of the lead-free low-melting glass composition according to claim 1 ;
low-thermal-expansion ceramic particles; and
a solvent.

9. The low-temperature sealing glass paste according to claim 8 ,
wherein the low-thermal-expansion ceramic particles include at least one selected from the group consisting of zirconium phosphate tungstate, quartz glass, zirconium silicate, aluminum oxide, mullite and niobium oxide, and
wherein the solvent includes at least one of α-terpineol and diethylene glycol n-butyl ether acetate.

10. A conductive material comprising:
the lead-free low-melting glass composition according to claim 1 ; and
metal particles,
wherein a content of the lead-free low-melting glass composition is 5 or more volume percent and less than 100 volume percent, and
a content of the metal particles is greater than 0 volume percent and 95 or less volume percent.

11. The conductive material according to claim 10 ,
wherein the metal particles include at least one selected from the group consisting of silver, silver alloys, copper, copper alloys, aluminum, aluminum alloys, tin and tin alloys.

12. The conductive material according to claim 10 ,
wherein the metal particles include at least one of silver and aluminum, and
wherein a content of the metal particles is 10 to 90 volume percent.

13. A conductive glass paste comprising:
particles formed of the lead-free low-melting glass composition according to claim 1 ; and
a solvent.

14. The conductive glass paste according to claim 13 , further comprising metal particles.

15. The conductive glass paste according to claim 14 ,
wherein the metal particles include at least one selected from the group consisting of silver, silver alloys, copper, copper alloys, aluminum, aluminum alloys, tin and tin alloys.

16. The conductive glass paste according to claim 13 ,
wherein the solvent includes at least one of α-terpineol, and diethylene glycol n-butyl ether acetate.

17. A glass-sealed component having a seal port ion including 40 to 100 volume percent of a lead-free low-melting glass phase,
wherein the lead-free low-melting glass phase includes a principal component including a vanadium oxide, a tellurium oxide and a silver oxide, and
the lead-free low-melting glass phase includes the principal component in a total content of 85 mole percent or more in terms of oxide, and contents of TeO 2 and Ag 2 O are each 1 to 2 times as much as a content of V 2 O 5 , and
wherein the lead-free low-melting glass phase further includes a secondary component including at least one selected from the group consisting of BaO, WO 3 and P 2 O 5 , and
a total content of the secondary component is greater than 0 mole percent and 13 mole percent or less in terms of oxide,
wherein the lead-free low-melting glass phase further includes an additional component including at least one selected from the group consisting of B 2 O 3 , Al 2 O 3 , Ga 2 O 3 and In 2 O 3 , and
a content of the additional component in the lead-free low-melting glass phase is 0.1 to 2.0 mole percent.

18. The glass-sealed component according to claim 17 ,
wherein the additional component includes at least one selected from the group consisting of Al 2 O 3 , Ga 2 O 3 and In 2 O 3 , and
a content of the additional component in the lead-free low-melting glass phase is 0.1 to 1.0 mole percent.

19. The glass-sealed component according to claim 17 ,
being one of a vacuum-insulating double glass panel and a display panel.

20. An electrical/electronic component comprising at least one unit selected from the group consisting of electrodes, interconnections, and conductive junctions,
wherein the unit includes 5 or greater volume percent and less than 100 volume percent of a lead-free low-melting glass phase, and greater than 0 volume percent and 95 or less volume percent of metal particles,
the lead-free low-melting glass phase including a principal component, a secondary component and an additional component,
wherein the principal component includes a vanadium oxide, a tellurium oxide and a silver oxide,
a total content of the principal component in the lead-free low-melting glass phase being 85 mole percent or more in term of V 2 O 5 , TeO 2 and Ag 2 O,
contents of TeO 2 and Ag 2 O each being 1 to 2 times as much as a content of V 2 O 5 ,
wherein the secondary component includes at least one selected from the group consisting of BaO, WO 3 and P 2 O 5 ,
a total content of the secondary component in the lead-free low-melting glass phase being greater than 0 mole percent and 13 mole percent or less in terms of oxide and,
wherein the additional component includes at least one selected from the group consisting of B 2 O 3 , Al 2 O 3 , Ga 2 O 3 , and In 2 O 3 ,
a content of the additional component in the lead-free low-melting

Assignees

• Hitachi Chemical Co Ltd
• Hitachi Chemical Co Ltd

Inventors

• Naito Takashi
• Tachizono Shinichi
• Yoshimura Kei
• Hashiba Yuji
• Aoyagi Takuya
• Onodera Taigo
• Miyake Tatsuya

Classifications

• H10W90/724

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10K59/8722

  Peripheral sealing arrangements, e.g. adhesives, sealants · CPC title

• C03C8/08

  containing phosphorus · CPC title

• H01L2924/16152

  Electricity · mapped topic

• H03H9/1014

  the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device · CPC title