Temperature stable MEMS resonator

Patent metadata

Field	Value
Publication number	US-9948273-B1
Application number	US-201615387375-A
Country	US
Kind code	B1
Filing date	Dec 21, 2016
Priority date	Dec 21, 2007
Publication date	Apr 17, 2018
Grant date	Apr 17, 2018

Abstract

A resonant member of a MEMS resonator oscillates in a mechanical resonance mode that produces non-uniform regional stresses such that a first level of mechanical stress in a first region of the resonant member is higher than a second level of mechanical stress in a second region of the resonant member. A plurality of openings within a surface of the resonant member are disposed more densely within the first region than the second region and at least partly filled with a compensating material that reduces temperature dependence of the resonant frequency corresponding to the mechanical resonance mode.

First claim

What is claimed is:

1. A microelectromechanical system (MEMS) resonator comprising:
a mechanically resonant structure having a first surface and a plurality openings formed in the first surface; and
a compensating material disposed within each of the openings in the first surface to reduce temperature dependence of a resonant frequency of the mechanically resonant structure, wherein the first surface is perpendicular to a height of the mechanically resonant structure and wherein the compensating material fills at least one of the openings from the first surface to a depth less than the height of the mechanically resonant structure.

2. The MEMS resonator of claim 1 wherein the openings are disposed in a strain field of the mechanically resonant structure.

3. The MEMS resonator of claim 1 wherein the mechanically resonant structure comprises at least one beam that extends from an anchored base and is characterized by a cross-section having a height perpendicular to the first surface and a width parallel to the first surface, wherein two of the plurality of openings are disposed adjacent one another along the width of the mechanically resonant structure and wherein the compensating material fills at least one of the two adjacent openings to a depth less than the height of the mechanically resonant structure.

4. The MEMS resonator of claim 1 wherein the mechanically resonant structure comprises a semiconductor and wherein the compensating material comprises an oxide.

5. The MEMS resonator of claim 4 wherein the mechanically resonant structure comprises silicon and wherein the compensating material comprises silicon oxide.

6. The MEMS resonator of claim 1 wherein the mechanically resonant structure and the compensating material are characterized by respective temperature coefficients of Young's Modulus (TCEs) with opposite signs over a predetermined temperature range.

7. The MEMS resonator of claim 1 further comprising a liner material disposed in at least one of the plurality of openings to isolate the mechanically resonant structure from the compensating material.

8. The MEMS resonator of claim 1 further comprising a capping material disposed over at least one of the plurality of openings to encapsulate the compensating material within the at least one of the plurality of openings.

9. A microelectromechanical system (MEMS) resonator comprising:
a mechanically resonant structure having a first surface and a plurality openings formed in the first surface; and
a compensating material disposed within each of the openings in the first surface to reduce temperature dependence of a resonant frequency of the mechanically resonant structure, wherein the mechanically resonant structure comprises a serrated surface perpendicular to the first surface.

10. A method of fabricating a microelectromechanical system (MEMS) resonator, the method comprising:
forming a mechanically resonant structure having a resonant frequency;
forming a plurality openings formed in a first surface of the mechanically resonant structure; and
disposing a compensating material within each of the openings in the first surface to reduce temperature dependence of the resonant frequency of the mechanically resonant structure, wherein the first surface is perpendicular to a height of the mechanically resonant structure and wherein disposing the compensating material within each of the openings comprises filling at least one of the openings with compensating material from the first surface to a depth less than the height of the mechanically resonant structure.

11. The method of claim 10 wherein forming a plurality openings formed in a first surface of the mechanically resonant structure comprises forming the plurality of openings in a strain field of the mechanically resonant structure.

12. The method of claim 10 wherein forming a mechanically resonant structure comprises forming at least one beam that extends from an anchored base and is characterized by a cross-section having a height perpendicular to the first surface and a width parallel to the first surface, and wherein forming the plurality openings within the first surface comprising forming two of the plurality of openings adjacent one another along the width of the mechanically resonant structure, and wherein disposing the compensating material within each of the openings, comprises filling at least one of the two adjacent openings with compensating material from the first surface to a depth less than the height of the mechanically resonant structure.

13. The method of claim 10 wherein forming the mechanically resonant structure comprises forming the mechanically resonant structure at least in part from a semiconductor and wherein disposing the compensating material within each of the openings in the first surface comprises disposing an oxide within each of the openings in the first surface.

14. The method of claim 13 wherein forming the mechanically resonant structure at least in part from a semiconductor comprises forming the mechanically resonant structure at least in part from silicon, and wherein disposing an oxide within each of the openings in the first surface comprises disposing silicon oxide within each of the openings in the first surface.

15. The method of claim 10 wherein the mechanically resonant structure and the compensating material are characterized by respective temperature coefficients of Young's Modulus (TCEs) with opposite signs over a predetermined temperature range.

16. The method of claim 10 further comprising disposing a liner material in at least one of the plurality of openings prior to disposing the compensating material therein such that the liner material isolates the mechanically resonant structure from the compensating material.

17. The method of claim 10 further comprising disposing a capping material over at least one of the plurality of openings to encapsulate the compensating material within the at least one of the plurality of openings.

18. A method of fabricating a microelectromechanical system (MEMS) resonator, the method comprising:
forming a mechanically resonant structure having a resonant frequency;
forming a plurality openings formed in a first surface of the mechanically resonant structure; and
disposing a compensating material within each of the openings in the first surface to reduce temperature dependence of the resonant frequency of the mechanically resonant structure, wherein forming the mechanically resonant structure comprises forming a mechanically resonant structure having a serrated surface perpendicular to the first surface.

Assignees

• SiTime Coporation
• Sitime Corp

Inventors

• Hagelin Paul M
• Grosjean Charles I

Classifications

• H03H3/0073 Primary

  Integration with other electronic structures · CPC title

• Y10T29/42

  Piezoelectric device making · CPC title

• H03H3/0072

  of microelectro-mechanical resonators or networks (micromembranes or microbeams B81B2203/01; manufacture of microstructural devices in general B81C) · CPC title

• H03H2009/02283

  Vibrating means · CPC title

• H03H2009/02299

  Comb-like, i.e. the beam comprising a plurality of fingers or protrusions along its length · CPC title