Encapsulated Bulk Acoustic Wave (BAW) Resonator Device
US-2016365843-A1 · Dec 15, 2016 · US
US9548720B1 · US · B1
| Field | Value |
|---|---|
| Publication number | US-9548720-B1 |
| Application number | US-201514863337-A |
| Country | US |
| Kind code | B1 |
| Filing date | Sep 23, 2015 |
| Priority date | Dec 21, 2007 |
| Publication date | Jan 17, 2017 |
| Grant date | Jan 17, 2017 |
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A resonant member of a MEMS resonator oscillates in a mechanical resonance mode that produces non-uniform regional stresses such that a first level of mechanical stress in a first region of the resonant member is higher than a second level of mechanical stress in a second region of the resonant member. A plurality of openings within a surface of the resonant member are disposed more densely within the first region than the second region and at least partly filled with a compensating material that reduces temperature dependence of the resonant frequency corresponding to the mechanical resonance mode.
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What is claimed is: 1. A microelectromechanical system (MEMS) resonator comprising: a resonant member that oscillates at a resonant frequency and in a mechanical resonance mode in which the resonant member is subject to non-uniform regional stresses such that a first level of mechanical stress in a first region of the resonant member is higher than a second level of mechanical stress in a second region of the resonant member, the resonant member having (i) a first surface that spans the first and second regions, and (ii) a plurality openings formed in the first surface and disposed more densely within the first region than the second region; and a compensating material disposed within each of the openings in the first surface to reduce temperature dependence of the resonant frequency of the resonant member. 2. The MEMS resonator of claim 1 wherein the compensating material is characterized by a temperature coefficient of Young's Modulus (TCE) having a sign opposite that of a TCE of the resonant member. 3. The MEMS resonator of claim 1 further comprising a capping material disposed over the openings. 4. The MEMS resonator of claim 3 wherein the compensating material comprises an oxide and the capping material comprises silicon. 5. The MEMS resonator of claim 1 wherein the resonant member has a second surface opposite the first surface and wherein at least one of the openings in the first surface extends to a depth less than a distance between the first and second surfaces along an axis normal to the first and second surfaces. 6. The MEMS resonator of claim 1 further comprising a liner material disposed in at least one of the plurality of openings. 7. The MEMS resonator of claim 1 wherein the resonant member has a second surface opposite the first surface and wherein at least one of the openings in the first surface of the resonant member extends into the resonant member without reaching the second surface. 8. The MEMS resonator of claim 1 wherein the resonant member has a second surface opposite the first surface and wherein at least one of the openings in the first surface extends through the resonant member from the first surface to the second surface. 9. The MEMS resonator of claim 1 wherein each of the plurality of openings in the first surface of the resonant member is formed by removal of a constituent material of the resonant member. 10. The MEMS resonator of claim 1 wherein the resonant member comprises silicon and the compensating material comprises an oxide. 11. A method of fabricating a microelectromechanical system (MEMS) resonator, the method comprising: forming a resonant member capable of oscillating at a resonant frequency and in a mechanical resonance mode in which one or more regions of the resonant member are subject to higher levels of mechanical stress than other regions of the resonant member; forming a plurality of openings in a first surface of the resonant member predominantly within the one or more regions subject to higher levels of mechanical stress; and disposing a compensating material within the openings in the first surface that reduces temperature dependence of the resonant frequency of the resonant member. 12. The method of claim 11 wherein disposing the compensating material within the openings comprises disposing within at least one of the openings a compensating material characterized by a temperature coefficient of Young's Modulus (TCE) having a sign opposite that of a TCE of the resonant member. 13. The method of claim 11 further comprising disposing a capping material within the openings over the compensating material. 14. The method of claim 13 wherein disposing the compensating material within the openings comprises disposing an oxide within the openings, and wherein disposing the capping material within the openings over the compensating material comprises disposing silicon within the openings over the oxide. 15. The method of claim 11 wherein the resonant member has a second surface opposite the first surface and wherein forming the plurality of openings in the first surface of the resonant member comprises extending at least one of openings in the first surface to a depth less than a distance between the first and second surfaces along an axis normal to the first and second surfaces. 16. The method of claim 11 further comprising disposing a liner material in at least one of the plurality of openings. 17. The method of claim 11 wherein the resonant member has a second surface opposite the first surface and wherein forming the plurality of openings in the first surface comprises extending at least one of the openings into the resonant member without reaching the second surface. 18. The method of claim 11 wherein the resonant member has a second surface opposite the first surface and wherein forming the plurality of openings in the first surface comprises extending at least one of the openings through the resonant member from the first surface to the second surface. 19. The method of claim 11 wherein forming the plurality of openings in the first surface comprises removal of a constituent material of the resonant member. 20. The method of claim 11 wherein forming the resonant member comprises forming a silicon resonant member from a silicon substrate, and wherein disposing the compensating material within the openings in the first surface of the resonant member comprises disposing an oxide within the openings.
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