Gas laser

Patent metadata

Field	Value
Publication number	US-9948055-B2
Application number	US-201715493106-A
Country	US
Kind code	B2
Filing date	Apr 20, 2017
Priority date	Nov 6, 2015
Publication date	Apr 17, 2018
Grant date	Apr 17, 2018

Abstract

A gas laser, including: a semiconductor laser, an optical beam-shaping system, a pair of electrodes, a discharge tube, a rear mirror, and an output mirror. The pair of electrodes includes two electrodes. The electrodes are symmetrically disposed at an outer layer of the discharge tube in parallel. The electrodes are connected to a radio-frequency power supply via a matching network, and the electrodes operate to modify working gas in the discharge tube through radio-frequency discharge. The rear mirror and the output mirror are disposed at two end surfaces of the discharge tube, respectively. The rear mirror, taken together with the output mirror and the discharge tube, form a resonant cavity. The output mirror is configured to output a laser beam.

First claim

The invention claimed is:

1. A gas laser, comprising:
a semiconductor laser;
an optical beam-shaping system;
a pair of electrodes comprising two electrodes;
a discharge tube;
a rear mirror; and
an output mirror;

wherein:
the two electrodes are symmetrically disposed in parallel at an outer layer of the discharge tube; the two electrodes are connected to a radio-frequency power supply via a matching network, and are configured to perform radio-frequency discharge on working gas in the discharge tube;
the rear mirror and the output mirror are disposed at two end surfaces of the discharge tube, respectively; the rear mirror, the output mirror, and the discharge tube form a resonant cavity; the output mirror is configured to output a laser beam;
an outer wall of the discharge tube in the vicinity of the optical beam-shaping system is coated with a transmission film; the transmission film is conformity to pump light in size and shape; the rest of the outer wall is coated with a reflection film, and an inner wall of the discharge tube is uncoated, or coated with another transmission film; the discharge tube is filled with the working gas; and the working gas is rare gas, or a mixture of rare gas and assistant gas;
the semiconductor laser is configured to produce pump light the optical beam-shaping system is configured to concentrate the pump light to form a narrow strip facula; the facula is allowed to pass through the transmission film on the outer wall of the discharge tube and is injected in the discharge tube; and a central wavelength of the pump light matches with an absorption line of gas particles produced by the radio-frequency discharge of the working gas in the discharge tube; and
the working gas in the discharge tube is a mixture of argon and helium, and a pressure thereof is between 0.5 and 2.0 atmosphere; a volume ratio of the argon to the helium is between 1:50 to 1:4.

2. The laser of claim 1 , wherein the pair of electrodes is aluminum or copper; and contact surfaces of the pair of electrodes and the discharge tube are flat surfaces, or curved surfaces which match with the outer wall of the discharge tube.

3. The laser of claim 1 , wherein a water-cooling channel is disposed in the pair of electrodes.

4. The laser of claim 1 , wherein a shielding chamber is disposed at an outer side of the pair of electrodes; the shielding chamber is made of metal materials; the shielding chamber is filled with gas with ionization potential, or the shielding chamber is vacuumed; and the shielding chamber is provided with a shielding chamber window at a position relative to the semiconductor laser, and the shielding chamber window allows the pump light to transmit.

5. The laser of claim 1 , wherein a gas inlet and a gas outlet are disposed in the discharge tube; and an external pipeline between the gas inlet and the gas outlet is connected to a fan and a heat exchanger in series.

6. The laser of claim 4 , wherein a gas inlet and a gas outlet are disposed in the discharge tube; and an external pipeline between the gas inlet and the gas outlet is connected to a fan and a heat exchanger in series.

7. The laser of claim 4 , wherein a plurality of the discharge tubes is connected in series in the shielding chamber; and pairs of the electrodes on the outer wall of adjacent discharge tubes are mutually perpendicular.

8. The laser of claim 1 , wherein the discharge tube is cylindrical.

9. A gas laser, comprising:
a semiconductor laser;
an optical beam-shaping system;
a pair of electrodes comprising two electrodes;
a discharge tube;
a rear mirror; and
an output mirror;

wherein:
the two electrodes are symmetrically disposed in parallel at an outer layer of the discharge tube; the two electrodes are connected to a radio-frequency power supply via a matching network, and are configured to perform radio-frequency discharge on working gas in the discharge tube;
the rear mirror and the output mirror are disposed at two end surfaces of the discharge tube, respectively; the rear mirror, the output mirror, and the discharge tube form a resonant cavity; the output mirror is configured to output a laser beam;
an outer wall of the discharge tube in the vicinity of the optical beam-shaping system is coated with a transmission film; the transmission film is conformity to pump light in size and shape; the rest of the outer wall is coated with a reflection film, and an inner wall of the discharge tube is uncoated, or coated with another transmission film; the discharge tube is filled with the working gas; and the working gas is rare gas, or a mixture of rare gas and assistant gas;
the semiconductor laser is configured to produce pump light the optical beam-shaping system is configured to concentrate the pump light to form a narrow strip facula; the facula is allowed to pass through the transmission film on the outer wall of the discharge tube and is injected in the discharge tube; and a central wavelength of the pump light matches with an absorption line of gas particles produced by the radio-frequency discharge of the working gas in the discharge tube; and
a water-cooling channel is disposed in the pair of electrodes.

10. A gas laser, comprising:
a semiconductor laser;
an optical beam-shaping system;
a pair of electrodes comprising two electrodes;
a discharge tube;
a rear mirror; and
an output mirror;

wherein
the two electrodes are symmetrically disposed in parallel at an outer layer of the discharge tube; the two electrodes are connected to a radio-frequency power supply via a matching network, and are configured to perform radio-frequency discharge on working gas in the discharge tube;
the rear mirror and the output mirror are disposed at two end surfaces of the discharge tube, respectively; the rear mirror, the output mirror, and the discharge tube form a resonant cavity; the output mirror is configured to output a laser beam;
an outer wall of the discharge tube in the vicinity of the optical beam-shaping system is coated with a transmission film; the transmission film is conformity to pump light in size and shape; the rest of the outer wall is coated with a reflection film, and an inner wall of the discharge tube is uncoated, or coated with another transmission film; the discharge tube is filled with the working gas; and the working gas is rare gas, or a mixture of rare gas and assistant gas;
the semiconductor laser is configured to produce pump light the optical beam-shaping system is configured to concentrate the pump light to form a narrow strip facula; the facula is allowed to pass through the transmission film on the outer wall of the discharge tube and is injected in the discharge tube; and a central wavelength of the pump light matches with an absorption line of gas particles produced by the radio-frequency discharge of the working gas in the discharge tube; and
a shielding chamber is disposed at an outer side of the pair of electrodes; the shielding chamber is made of metal materials; the shielding chamber is filled with gas with ionization potential, or the shielding chamber is vacuumed; and the shielding chamber is provided with a shielding chamber window at a position relative to the semiconductor laser, and the shielding chamber window allows the pump light to transmit.

11. The laser of claim 10 , wherein a gas inlet and a gas outlet are disposed in the discharge tube; and an external pipeline between the gas inlet and the gas outlet is connected to a fan and a heat exchanger in series.

12. The laser of claim 10 , wherein a plurality of the discharge tubes is connected in series in the shielding chamber; and pairs of the electrodes

Assignees

• Univ Huazhong Science Tech

Inventors

• Chen Hanyuan
• Qin Yingxiong
• Peng Hao
• Wan chenhao
• Long Sichen
• Wu Xiangxi
• Tang Xiahui

Classifications

• H01S3/0407

  Liquid cooling, e.g. by water · CPC title

• H01S3/0405

  Conductive cooling, e.g. by heat sinks or thermo-electric elements · CPC title

• H01S3/034

  Optical devices within, or forming part of, the tube, e.g. windows, mirrors (reflectors having variable properties or positions for initial adjustment of the resonator H01S3/086) · CPC title

• H01S3/09415

  the pumping beam being parallel to the lasing mode of the pumped medium, e.g. end-pumping · CPC title

• H01S3/2207

  Noble gas ions, e.g. Ar+>, Kr+> · CPC title