Method of manufacturing semiconductor substrate and substrate for semiconductor growth
US-2016351748-A1 · Dec 1, 2016 · US
US9947850B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9947850-B2 |
| Application number | US-201515124724-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 27, 2015 |
| Priority date | Apr 4, 2014 |
| Publication date | Apr 17, 2018 |
| Grant date | Apr 17, 2018 |
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In order to provide a substrate for light emitting devices having high heat radiating properties, dielectric strength voltage properties, light reflectivity, and excellent mass productivity, a substrate ( 5 ) includes an intermediate layer ( 11 ) containing ceramic which is formed on the surface of the aluminum base ( 10 ) by using an aerosol deposition method.
Opening claim text (preview).
The invention claimed is: 1. A substrate for light emitting devices, comprising: a base containing a metal material; a first insulating layer which is formed on one surface of the base; and a wiring pattern which is formed on the first insulating layer, wherein the first insulating layer is formed of ceramic which is formed by using an aerosol deposition method, a buffer layer formed of a material having a coefficient of linear expansion smaller than that of the base is formed between the base and the first insulating layer, and the first insulating layer has thermal conductivity and contains an additive of an inorganic material for improving brightness. 2. A substrate for light emitting devices, comprising: a base containing a metal material; a first insulating layer which is formed on one surface of the base; a wiring pattern which is formed on the first insulating layer, a second insulating layer having thermal conductivity and light reflectivity which is formed between the first insulating layer and the wiring pattern, wherein the first insulating layer is formed of ceramic which is formed by using an aerosol deposition method, a buffer layer formed of a material having a coefficient of linear expansion smaller than that of the base is formed between the base and the first insulating layer, the first insulating layer has thermal conductivity, the second insulating layer contains ceramic which is formed by using the aerosol deposition method, and the second insulating layer further contains an additive of an inorganic material for improving brightness which is formed by using the aerosol deposition method and which is contained in the second insulating layer and is entirely ceramic having high brightness. 3. A substrate for light emitting devices, comprising: a base containing a metal material; a first insulating layer which is formed on one surface of the base; and a wiring pattern which is formed on the first insulating layer, a second insulating layer having light reflectivity which is formed between the first insulating layer and the wiring pattern, wherein the first insulating layer is formed of ceramic which is formed by using an aerosol deposition method, a buffer layer formed of a material having a coefficient of linear expansion smaller than that of the base is formed between the base and the first insulating layer, the first insulating layer has thermal conductivity and reinforces dielectric strength voltage properties of the second insulating layer, and the thermal conductivity of the first insulating layer is higher than the thermal conductivity of the second insulating layer, and the second insulating layer is a mixed layer of ceramic and a vitreous matter or a mixed layer of ceramic and a resin. 4. A substrate for light emitting devices, comprising: a base containing a metal material; a first insulating layer having light reflectivity which is formed on one surface of the base; a second insulating layer having thermal conductivity which is formed on the other surface of the base; and a wiring pattern which is formed on the first insulating layer, wherein the second insulating layer is formed of ceramic which is formed by using an aerosol deposition method and reinforces dielectric strength voltage properties of the first insulating layer, a buffer layer formed of a material having a coefficient of linear expansion smaller than that of the base is formed between the base and the first insulating layer, the thermal conductivity of the first insulating layer is higher than the thermal conductivity of the second insulating layer, and the second insulating layer is a mixed layer of ceramic and a vitreous matter or a mixed layer of ceramic and a resin.
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