Group-IV solar cell structure using group-IV or III-V heterostructures

US9947823B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9947823-B2
Application numberUS-201514807347-A
CountryUS
Kind codeB2
Filing dateJul 23, 2015
Priority dateSep 14, 2012
Publication dateApr 17, 2018
Grant dateApr 17, 2018

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Abstract

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Device structures, apparatuses, and methods are disclosed for photovoltaic cells that may be a single junction or multijunction solar cells, with at least a first layer comprising a group-IV semiconductor in which part of the cell comprises a second layer comprising a III-V semiconductor or group-IV semiconductor having a different composition than the group-IV semiconductor of the first layer, such that a heterostructure is formed between the first and second layers.

First claim

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We claim: 1. A photovoltaic cell comprising: a first layer comprising an n-type group IV primary photogeneration layer, the first layer having a first major surface and a second major surface opposite the first major surface; a second layer comprising a p-type group III-V layer; and a third layer comprising an n-type group III-V layer; wherein the second layer directly contacts the first major surface of the first layer and the third layer directly contacts the second major surface of the first layer; wherein the first layer forms a photoactive p-n heterojunction with the second layer; and wherein the first layer is an epitaxial layer grown on the second layer. 2. The photovoltaic cell of claim 1 , wherein the photovoltaic cell is a subcell within a multijunction solar cell. 3. The photovoltaic cell of claim 1 , wherein the first layer is formed from Ge. 4. The photovoltaic cell of claim 1 , wherein the second layer is formed from carbon-doped GaAs or carbon-doped AlGaAs. 5. The photovoltaic cell of claim 1 , wherein group V elements of the third layer provide n-type doping for the first layer. 6. The photovoltaic cell of claim 1 , wherein the third layer is closer to a sunward surface of the photovoltaic cell than are the first layer and the second layer. 7. The photovoltaic cell of claim 1 , wherein the first layer is closer to a sunward surface of the photovoltaic cell than is the second layer.

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What does patent US9947823B2 cover?
Device structures, apparatuses, and methods are disclosed for photovoltaic cells that may be a single junction or multijunction solar cells, with at least a first layer comprising a group-IV semiconductor in which part of the cell comprises a second layer comprising a III-V semiconductor or group-IV semiconductor having a different composition than the group-IV semiconductor of the first layer,…
Who is the assignee on this patent?
Boeing Co
What technology area does this patent fall under?
Primary CPC classification H01L31/074. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Apr 17 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).