Method of etching a semiconductor layer of a photovoltaic device
US-2016308078-A1 · Oct 20, 2016 · US
US9947823B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9947823-B2 |
| Application number | US-201514807347-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 23, 2015 |
| Priority date | Sep 14, 2012 |
| Publication date | Apr 17, 2018 |
| Grant date | Apr 17, 2018 |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
Device structures, apparatuses, and methods are disclosed for photovoltaic cells that may be a single junction or multijunction solar cells, with at least a first layer comprising a group-IV semiconductor in which part of the cell comprises a second layer comprising a III-V semiconductor or group-IV semiconductor having a different composition than the group-IV semiconductor of the first layer, such that a heterostructure is formed between the first and second layers.
Opening claim text (preview).
We claim: 1. A photovoltaic cell comprising: a first layer comprising an n-type group IV primary photogeneration layer, the first layer having a first major surface and a second major surface opposite the first major surface; a second layer comprising a p-type group III-V layer; and a third layer comprising an n-type group III-V layer; wherein the second layer directly contacts the first major surface of the first layer and the third layer directly contacts the second major surface of the first layer; wherein the first layer forms a photoactive p-n heterojunction with the second layer; and wherein the first layer is an epitaxial layer grown on the second layer. 2. The photovoltaic cell of claim 1 , wherein the photovoltaic cell is a subcell within a multijunction solar cell. 3. The photovoltaic cell of claim 1 , wherein the first layer is formed from Ge. 4. The photovoltaic cell of claim 1 , wherein the second layer is formed from carbon-doped GaAs or carbon-doped AlGaAs. 5. The photovoltaic cell of claim 1 , wherein group V elements of the third layer provide n-type doping for the first layer. 6. The photovoltaic cell of claim 1 , wherein the third layer is closer to a sunward surface of the photovoltaic cell than are the first layer and the second layer. 7. The photovoltaic cell of claim 1 , wherein the first layer is closer to a sunward surface of the photovoltaic cell than is the second layer.
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Solar cells from Group III-V materials · CPC title
Electricity · mapped topic
Related publications grouped by family.
Answers are generated from the same data shown on this page.