Excitonic bose-einstein condensate (bec) as qubits using semiconductor nanostructures for quantum technologies
US-2024046133-A1 · Feb 8, 2024 · US
US9224902B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9224902-B2 |
| Application number | US-201414229609-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 28, 2014 |
| Priority date | Nov 27, 2006 |
| Publication date | Dec 29, 2015 |
| Grant date | Dec 29, 2015 |
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A silicon solar cell having a silicon substrate includes p-type and n-type emitters on a surface of the substrate, the emitters being doped nano-particles of silicon. To reduce high interface recombination at the substrate surface, the nano-particle emitters are preferably formed over a thin interfacial tunnel oxide layer on the surface of the substrate.
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What is claimed is: 1. A method of fabricating a silicon solar cell having nano-particle silicon emitters comprising the steps of: providing a silicon substrate having first and second opposing major surfaces; forming a thin interfacial passivation layer on one of the first and second opposing major surfaces, wherein forming the thin interfacial passivation layer comprises forming a tunnel oxide layer; forming a first plurality of p-doped emitters formed using silicon nano-par…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Electricity · mapped topic
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