Methods for forming low-resistance contacts through integrated process flow systems

Patent metadata

Field	Value
Publication number	US-9947578-B2
Application number	US-201615358690-A
Country	US
Kind code	B2
Filing date	Nov 22, 2016
Priority date	Nov 25, 2015
Publication date	Apr 17, 2018
Grant date	Apr 17, 2018

Abstract

Methods for forming metal contacts having tungsten liner layers are provided herein. In some embodiments, a method of processing a substrate includes: exposing a substrate, within a first substrate process chamber, to a plasma formed from a first gas comprising a metal organic tungsten precursor gas or a fluorine-free tungsten halide precursor to deposit a tungsten liner layer, wherein the tungsten liner layer is deposited atop a dielectric layer and within a feature formed in a first surface of the dielectric layer of a substrate; transferring the substrate to a second substrate process chamber without exposing the substrate to atmosphere; and exposing the substrate to a second gas comprising a tungsten fluoride precursor to deposit a tungsten fill layer atop the tungsten liner layer.

First claim

The invention claimed is:

1. A method of processing a substrate, comprising:
exposing a substrate, within a first substrate process chamber, to a plasma formed from a first gas comprising a metal organic tungsten precursor gas or a fluorine-free tungsten halide precursor to deposit a tungsten liner layer, wherein the tungsten liner layer is deposited atop a dielectric layer and within a feature formed in a first surface of the dielectric layer of a substrate;
transferring the substrate to a second substrate process chamber without exposing the substrate to atmosphere;
exposing the substrate to a second gas comprising a tungsten fluoride precursor to deposit a tungsten fill layer atop the tungsten liner layer; and
exposing the substrate to a tungsten hexafluoride (WF 6 ) gas at a temperature of about 200 to about 400 degrees Celsius prior to depositing the tungsten liner layer or to a hydrogen (H 2 ) gas at a temperature of about 300 to about 500 degrees Celsius prior to depositing the tungsten liner layer.

2. The method of claim 1 , wherein the tungsten liner layer has a thickness of about 10 to about 50 angstroms.

3. The method of claim 1 , wherein the first gas further comprises a hydrogen-containing gas.

4. The method of claim 3 , wherein the hydrogen-containing gas is hydrogen (H 2 ), or ammonia (NH 3 ).

5. The method of claim 1 , wherein the first gas further comprises a carrier gas.

6. The method of claim 5 , wherein the carrier gas is argon, helium, or nitrogen.

7. The method of claim 6 , wherein a flow rate of the carrier gas is about 100 sccm to about 600 sccm.

8. The method of claim 1 , wherein the metal organic tungsten precursor gas is W(CO) 6 , CpW(CO) 2 NO, EtCpW(CO) 2 NO, Cp*W(CO) 3 NO, Cp 2 WH 2 , C 4 H 9 CNW(CO) 5 , (C 5 H 11 CN)W(CO) 5 , W(C 3 H 5 ) 4 , W(C 3 H 4 CH 3 ) 4 , W(C 4 H 6 ) 3 , W(C 4 H 6 ) 2 (CO) 2 , or W(C 4 H 6 )(CO) 4 .

9. The method of claim 1 , wherein the first substrate process chamber is at a pressure of about 0.5 Torr to about 40 Torr.

10. The method of claim 1 , wherein the tungsten fluoride precursor is tungsten hexafluoride (WF 6 ).

11. The method of claim 1 , wherein the fluorine-free tungsten halide precursor is tungsten pentachloride (WCl 5 ) or tungsten hexachloride (WCl 6 ).

12. The method of claim 1 , wherein the second gas further comprises a hydrogen containing gas.

13. The method of claim 12 , wherein the hydrogen containing gas is hydrogen (H 2 ) or ammonia (NH 3 ).

14. The method of claim 1 , further comprising exposing the substrate to the tungsten hexafluoride (WF 6 ) gas or the hydrogen (H 2 ) gas for about 0.5 to about 600 seconds.

15. A method of processing a substrate, comprising:
exposing the substrate to a tungsten hexafluoride (WF 6 ) gas at a temperature of about 200 to about 400 degrees Celsius or to a hydrogen (H 2 ) gas at a temperature of about 300 to about 500 degrees Celsius for about 0.5 to about 600 seconds;
exposing a substrate, within a first substrate process chamber, to a plasma formed from a first gas comprising a metal organic tungsten precursor gas or a fluorine-free tungsten halide precursor to deposit a tungsten liner layer, wherein the tungsten liner layer is deposited atop a dielectric layer and within a feature formed in a first surface of the dielectric layer of a substrate;
transferring the substrate to a second substrate process chamber without exposing the substrate to atmosphere; and
exposing the substrate to a second gas comprising a tungsten fluoride precursor to deposit a tungsten fill layer atop the tungsten liner layer.

16. The method of claim 15 , wherein the metal organic tungsten precursor gas is W(CO)6, CpW(CO)2NO, EtCpW(CO)2NO, Cp*W(CO)3NO, Cp2WH2, C4H9CNW(CO)5, (C5H11CN)W(CO)5, W(C3H5)4, W(C3H4CH3)4, W(C4H6)3, W(C4H6)2(CO)2, or W(C4H6)(CO)4.

17. The method of claim 15 , wherein the tungsten fluoride precursor is tungsten hexafluoride (WF6).

18. The method of claim 15 , wherein the fluorine-free tungsten halide precursor is tungsten pentachloride (WCl 5 ) or tungsten hexachloride (WCl 6 ).

19. A computer readable medium, having instructions stored thereon which, when executed, cause a process chamber to perform a method of processing a substrate, the method comprising:
exposing the substrate to a tungsten hexafluoride (WF 6 ) gas at a temperature of about 200 to about 400 degrees Celsius or to a hydrogen (H 2 ) gas at a temperature of about 300 to about 500 degrees Celsius for about 0.5 to about 600 seconds;
exposing a substrate, within a first substrate process chamber, to a plasma formed from a first gas comprising a metal organic tungsten precursor gas or a fluorine-free tungsten halide precursor to deposit a tungsten liner layer, wherein the tungsten liner layer is deposited atop a dielectric layer and within a feature formed in a first surface of the dielectric layer of a substrate;
transferring the substrate to a second substrate process chamber without exposing the substrate to atmosphere; and
exposing the substrate to a second gas comprising a tungsten fluoride precursor to deposit a tungsten fill layer atop the tungsten liner layer.

Assignees

• Applied Materials Inc

Inventors

• Lei Yu
• Banthia Vikash
• Wu Kai
• Fu Xinyu
• Xu Yi
• Daito Kazuya
• Ma Feiyue
• Agarwal Pulkit
• Lin Chi-Chou
• Wu Dien-Yeh
• Jian Guoqiang
• Tang Wei V
• Bakke Jonathan
• Chang Mei
• Ramamurthy Sundar

Classifications

• H10P50/283

  by chemical means · CPC title

• H10P14/43 Primary

  Chemical deposition, e.g. chemical vapour deposition [CVD] · CPC title

• H10W20/081

  by forming openings in the dielectric parts · CPC title

• H10W20/056

  by filling conductive material into holes, grooves or trenches · CPC title

• H10W20/045

  for deposition from the gaseous phase, e.g. for chemical vapour deposition [CVD] · CPC title