Process for producing a scattering layer for electromagnetic radiation and scattering layer for scattering electromagnetic radiation

US9945989B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9945989-B2
Application numberUS-201314396801-A
CountryUS
Kind codeB2
Filing dateApr 11, 2013
Priority dateApr 26, 2012
Publication dateApr 17, 2018
Grant dateApr 17, 2018

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

Various embodiments may relate to a process for producing a scattering layer for electromagnetic radiation. The process may include applying scattering centers onto a carrier, applying glass onto the scattering centers, and liquefying of the glass so that a part of the liquefied glass flows between the scattering centers toward the surface of the carrier, in such a way that a part of the liquefied glass still remains above the scattering centers.

First claim

Opening claim text (preview).

The invention claimed is: 1. A method for producing a scattering layer for electromagnetic radiation, the method comprising in this order: applying scattering centers onto a surface of a carrier of an electronic element; applying glass onto the scattering centers; and liquefying of the glass so that a part of the liquefied glass flows between the scattering centers toward the surface of the carrier, in such a way that a part of the liquefied glass still remains above the scattering centers. 2. The method as claimed in claim 1 , wherein the scattering centers have a curved surface. 3. The method as claimed in claim 1 , wherein the scattering centers have an average particle size of from 0.1 μm to 3 μm. 4. The method as claimed in claim 1 , wherein the scattering centers applied on the carrier form a layer with a thickness of from 0.1 μm to 10 μm. 5. The method as claimed in claim 1 , wherein the glass has a refractive index greater than 1.7. 6. The method as claimed in claim 1 , wherein the glass on or over the scattering centers has a substance or substance mixture with a refractive index greater than or equal to the layer thickness-weighted refractive index of further layers in the layer cross section of the electronic element that is formed on the scattering layer. 7. The method as claimed in claim 1 , wherein the scattering layer has a difference greater than 0.05 between the refractive index of the scattering centers and the refractive index of the glass after solidification of the glass. 8. The method as claimed in claim 1 , wherein, when a soda-lime glass is used as the carrier, the glass powder is vitrified at temperatures of up to at most 600° C. 9. The method as claimed in claim 1 , wherein the scattering layer is applied on the carrier with a thickness of from 1 μm to 40 μm. 10. The method as claimed in claim 1 , wherein the scattering centers are applied on or over the carrier from a scattering center suspension or scattering center paste. 11. The method as claimed in claim 10 , wherein the scattering center suspension on or over the carrier is dried by means of constituents that evaporate. 12. The method as claimed in claim 1 , wherein the glass is applied in particles as glass powder onto the scattering centers. 13. The method as claimed in claim 12 , wherein the glass particles have a diameter of from 0.1 μm to 30 μm. 14. The method as claimed in claim 1 , wherein the concentration by volume of scattering centers decreases from the surface of the carrier. 15. The method as claimed in claim 1 , liquefying of the glass further comprising: wherein the glass is liquefied such that: an interface of the carrier with the scattering layer has a concentration of the matrix greater than 0% by volume; and the surface of the scattering layer has a concentration of the matrix of 100% by volume and the matrix of the scattering layer has at least one continuous connection without gaps from the surface of the carrier to the surface of the scattering layer, wherein the part of the scattering layer above the scattering centers has a thickness equal to or greater than the roughness of the uppermost layer of the scattering centers without matrix. 16. The method as claimed in one of claim 1 , liquefying of the glass further comprising: wherein the glass is liquefied such that: an interface of the carrier with the scattering layer has a concentration of the matrix greater than 0% by volume; and the surface of the scattering layer has a concentration of the matrix of 100% by volume and the matrix of the scattering layer has at least one continuous connection without gaps from the surface of the carrier to the surface of the scattering layer, wherein the part of the scattering layer above the scattering centers has a thickness such that the surface has a rms roughness of less than 10 nm. 17. The method as claimed in one of claim 1 , further comprising: solidifying the glass and forming a transparent electrode on the glass.

Assignees

Inventors

Classifications

  • comprising scattering means · CPC title

  • Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions · CPC title

  • used in transmission · CPC title

  • by means of dispersed particles · CPC title

  • C03C8/10Primary

    containing lead · CPC title

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What does patent US9945989B2 cover?
Various embodiments may relate to a process for producing a scattering layer for electromagnetic radiation. The process may include applying scattering centers onto a carrier, applying glass onto the scattering centers, and liquefying of the glass so that a part of the liquefied glass flows between the scattering centers toward the surface of the carrier, in such a way that a part of the liquef…
Who is the assignee on this patent?
Osram Opto Semiconductors Gmbh, Osram Oled Gmbh
What technology area does this patent fall under?
Primary CPC classification C03C8/10. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Apr 17 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).