Conductive paste for solar cell element surface electrodes and method for manufacturing solar cell element

Patent metadata

Field	Value
Publication number	US-2016284889-A1
Application number	US-201414442633-A
Country	US
Kind code	A1
Filing date	Mar 20, 2014
Priority date	Mar 29, 2013
Publication date	Sep 29, 2016
Grant date	—

Abstract

A conductive paste for a solar cell element front surface electrode that is used to form a front surface electrode of a solar cell element that is provided with a semiconductor substrate, an antireflective film disposed in a first region on one main surface of the semiconductor substrate, and a front surface electrode disposed in a second region on the one main surface of the semiconductor substrate. The conductive paste contains a conductive powder, a mixed glass frit, and an organic vehicle in which the mixed glass frit contains, in the form of mixture, a tellurium-based glass frit containing tellurium, tungsten, and bismuth as essential components and a lead-bismuth-based glass frit that contains lead and bismuth as essential components and that substantially does not contain tellurium.

First claim

1 . A conductive paste for a solar cell element front surface electrode that is used to form a front surface electrode of a solar cell element that is provided with a semiconductor substrate, an antireflective film disposed in a first region on one main surface of the semiconductor substrate, and a front surface electrode disposed in a second region on the one main surface of the semiconductor substrate, characterized in that the conductive paste comprises a conductive powder, a mixed glass frit, and an organic vehicle in which the mixed glass frit contains, in the form of mixture, a tellurium-based glass frit containing tellurium, tungsten, and bismuth as essential components and a lead-bismuth-based glass frit that contains lead and bismuth as essential components and that substantially does not contain tellurium.

2 . The conductive paste for a solar cell element front surface electrode according to claim 1 , wherein a softening point of the tellurium-based glass frit is 10 to 100° C. lower than a softening point of the lead-bismuth-based glass frit.

3 . The conductive paste for a solar cell element front surface electrode according to claim 1 , wherein the mixed glass frit contains the tellurium-based glass frit and the lead-bismuth-based glass frit at a blending ratio of 4:6 to 8:2 as a mass ratio.

4 . The conductive paste for a solar cell element front surface electrode according to claim 1 , wherein the tellurium-based glass frit is a glass frit which contains, as the oxide, 30 to 80 mol % of tellurium, 10 to 50 mol % of tungsten, and 5 to 25 mol % of bismuth.

5 . The conductive paste for a solar cell element front surface electrode according to claim 1 , wherein the lead-bismuth-based glass frit is a glass frit which contains, as the oxide, 30 to 70 mol % of lead, 10 to 40 mol % of bismuth, not more than 30 mol % of zinc (including 0 mol %), and 5 to 30 mol % of silicon or a glass frit which contains, as the oxide, 30 to 70 mol % of lead, 10 to 40 mol % of bismuth, not more than 30 mol % of zinc (including 0 mol %), and 1 to 25 mol % of boron.

6 . The conductive paste for a solar cell element front surface electrode according to claim 1 , wherein the mixed glass frit further contains a lead-tellurium-based glass frit containing lead and tellurium as essential components.

7 . The conductive paste for a solar cell element front surface electrode according to claim 1 , wherein the conductive paste further contains at least one selected from the group consisting of tin, tin(II) oxide, and tin(IV) oxide as an additive.

8 . A method for manufacturing a solar cell element which comprises a semiconductor substrate, an antireflective film disposed in a first region on one main surface of the semiconductor substrate, and a front surface electrode disposed in a second region on the one main surface of the semiconductor substrate,
the method comprising: a first step of forming the antireflective film on the one main surface of the semiconductor substrate; a second step of printing, on the antireflective film, a conductive paste comprising a conductive powder, a mixed glass frit, and an organic vehicle in which, the mixed glass frit contains, in the form of mixture, a tellurium-based glass frit containing tellurium, tungsten, and bismuth as essential components and a lead-bismuth-based glass frit that contains lead and bismuth as essential components and that substantially does not contain tellurium; and a third step of disposing the antireflective film in the first region of the semiconductor substrate and forming the front surface electrode in the second region of the semiconductor substrate, by firing the conductive paste and removing the antireflective film located under the conductive paste.

9 . The method for manufacturing a solar cell element according to claim 8 , wherein a softening point of the tellurium-based glass frit is 10 to 100° C. lower than a softening point of the lead-bismuth-based glass frit.

10 . The method for manufacturing a solar cell element according to claim 8 , wherein the mixed glass frit contains the tellurium-based glass frit and the lead-bismuth-based glass frit at a blending ratio of 4:6 to 8:2 as a mass ratio.

11 . The method for manufacturing a solar cell element according to claim 8 , wherein the tellurium-based glass frit is a glass frit which contains, as the oxide, 30 to 80 mol % of tellurium, 10 to 50 mol % of tungsten, and 5 to 25 mol % of bismuth.

12 . The method for manufacturing a solar cell element according to claim 8 , wherein the lead-bismuth-based glass frit is a glass frit which contains, as the oxide, 30 to 70 mol % of lead, 10 to 40 mol % of bismuth, not more than 30 mol % of zinc (including 0 mol %), and 5 to 30 mol % of silicon or a glass frit which contains, as the oxide, 30 to 70 mol % of lead, 10 to 40 mol % of bismuth, not more than 30 mol % of zinc (including 0 mol %), and 1 to 25 mol % of boron.

13 . The method for manufacturing a solar cell element according to claim 8 , wherein the mixed glass frit further contains a lead-tellurium-based glass frit containing lead and tellurium as essential components.

14 . The method for manufacturing a solar cell element according to claim 8 , wherein the conductive paste further contains at least one selected from the group consisting of tin, tin(II) oxide, and tin(IV) oxide as an additive.

Assignees

• Shoei Chemical Ind Co

Inventors

• Akimoto Yuji
• Kanasaku Tadashi
• Nishimura Kousuke
• Miura Yoshio

Classifications

• H01B1/16 Primary

  the conductive material comprising metals or alloys · CPC title

• C03C3/142

  containing lead · CPC title

• C03C8/18

  containing free metals · CPC title

• H01B1/22

  the conductive material comprising metals or alloys · CPC title

• C03C8/22

  containing two or more distinct frits having different compositions · CPC title