Device for manufacturing semiconductor or metallic oxide ingot
US-9528195-B2 · Dec 27, 2016 · US
US9945046B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9945046-B2 |
| Application number | US-201214343004-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 3, 2012 |
| Priority date | Sep 5, 2011 |
| Publication date | Apr 17, 2018 |
| Grant date | Apr 17, 2018 |
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The device forming a crucible for fabrication of crystalline material by directional solidification comprises a bottom and at least one side wall. The bottom presents a first portion having a first thermal resistance and a second portion having a second thermal resistance that is lower than the first thermal resistance. The second portion is designed to receive a seed for fabrication of the crystalline material. The bottom and side wall are at least partially formed by a tightly sealed part including at least one indentation participating in defining said first and second portions. The first portion is covered by a first anti-adherent layer having an additional first thermal resistance. The second portion may be covered by a second anti-adherent layer having an additional second thermal resistance that is lower than the first thermal resistance.
Opening claim text (preview).
The invention claimed is: 1. A device forming crucible for fabrication of crystalline material by directional solidification comprising a bottom and at least one side wall wherein the bottom comprises: a first portion presenting a first thermal resistance and a second portion presenting a second thermal resistance that is lower than the first thermal resistance, the bottom and said at least one side wall being at least partly formed by a tightly sealed part comprising at least one indentation participating in defining said first and second portions, wherein the first portion is covered by a first anti-adherent layer having a first face in contact with the bottom of the crucible and a second face designed to be in contact with the crystalline material, the first anti-adherent layer having an additional first thermal resistance measured between said first and second faces, and wherein the second portion is covered by a second anti-adherent layer having a first face in contact with the bottom of the crucible and a second face designed to be in contact with the crystalline material, the second anti-adherent layer having an additional second thermal resistance that is lower than the first thermal resistance and measured between said first and second faces. 2. The device according to claim 1 , wherein the first anti-adherent layer has a thickness greater than a thickness of the second anti-adherent layer, the thicknesses being measured on the bottom of the crucible. 3. The device according to claim 1 , wherein the first anti-adherent layer and the second anti-adherent layer are made from the same material. 4. The device according to claim 1 , comprising a plurality of first and second portions with an alternation arrangement between the first and second portions from a first side wall to an opposite second side wall. 5. The device according to claim 1 , wherein an inner wall of the bottom of the tightly sealed part comprises an indentation representative of the second portion. 6. The device according to claim 1 , wherein an inner wall of the bottom of the tightly sealed part is flat. 7. A method for fabrication of a crucible according to claim 1 for directional solidification comprising a bottom and at least one side wall comprising: forming a mask on the bottom of the crucible so as to define areas covered by the mask and uncovered areas, depositing a first coating designed to form a first anti-adherent layer, eliminating the mask, depositing a second coating designed to form a second anti-adherent layer, and annealing the first and second coatings to form the first and second anti-adherent layers. 8. The method according to claim 7 , wherein the mask is a sheet of paper. 9. The method according to claim 7 , wherein the coating is deposited by spraying. 10. The method according to claim 7 , wherein the coating is subjected to an oxidizing annealing so as to form the first anti-adherent layer oxidized on the inner surface of the bottom. 11. A system for solidification of crystalline material comprising: a device forming crucible according to claim 1 , means for generating a thermal gradient inside the device forming crucible and a counter-crucible made from a material presenting a lower thermal resistivity than a thermal resistivity of a material forming the bottom of the device forming crucible. 12. The system according to claim 11 , wherein the counter-crucible is located against the outer surface of the bottom of the device forming crucible, the counter-crucible presenting a bottom with an inner surface having a complementary shape to an outer surface of the bottom of the device forming crucible. 13. The system according to claim 11 , wherein the bottom of the counter-crucible has a constant thickness. 14. The system according to claim 11 , wherein the outer surface of the bottom of the device forming crucible is flat. 15. The system according to claim 11 , comprising a heat extractor facing the first portion and the second portion of the bottom of the device forming crucible. 16. The system according to claim 11 , comprising an additional thermal resistance arranged between the counter-crucible and a recess formed on the outer surface of the bottom of the device forming crucible so as to perform thermal conduction of the recessed area with the counter-crucible. 17. A method for fabrication of a crystalline material by directional solidification of a material in liquid phase in a device forming crucible of a system according to claim 11 , comprising: providing the device forming crucible provided with a seed made from crystalline material made from a second crystalline material and arranged in such a way as to at least partially cover the second portion of the bottom of the device forming crucible, the device forming crucible being at least partially filled by a feedstock of material to be solidified, generating a first thermal gradient in the device forming crucible so as to melt the material to be solidified, the seed remaining at least partially in solid state, generating a second thermal gradient in the device forming crucible so as to solidify the material in the molten state from the seed. 18. The method according to claim 17 , wherein the seed is arranged in an indentation of the bottom of the device forming crucible. 19. The device according to claim 2 , wherein the first anti-adherent layer and the second anti-adherent layer are made from the same material. 20. The device according to claim 1 , wherein an inner wall of the bottom of the tightly sealed part comprises an indentation representative of the second portion, the indentation is formed by a blind hole. 21. The device according to claim 1 , wherein the bottom of the tightly sealed part is devoid of through hole.
characterised by the seed, e.g. its crystallographic orientation · CPC title
Heating or cooling of the melt or the crystallised material · CPC title
Silicon · CPC title
Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method (C30B13/00, C30B15/00, C30B17/00, C30B19/00 take precedence; under a protective fluid C30B27/00) · CPC title
Shape defined by a solid member other than seed or product [e.g., Bridgman-Stockbarger] · CPC title
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