Heating a furnace for the growth of semiconductor material

Patent metadata

Field	Value
Publication number	US-9236281-B2
Application number	US-201214234357-A
Country	US
Kind code	B2
Filing date	Jul 19, 2012
Priority date	Jul 22, 2011
Publication date	Jan 12, 2016
Grant date	Jan 12, 2016

Abstract

A multi-ingot furnace for the growth of crystalline semiconductor material has one or more heating devices for heating a hot zone in which crucibles containing semiconductor material are received. At least one of the heating devices is arranged to apply a predetermined differential heat flux profile across a horizontal cross-section of the semiconductor material in one or more of the crucibles, the predetermined differential heat flux profile being selected in dependence the position of the one or more crucibles in an array. In this manner, the heating device can at least partially compensate for differences in the temperature across the semiconductor material that arises from its geometric position in the furnace. This reduces the possibility of defects such as dislocations during the growth of a crystalline semiconductor material. Associated methods are also disclosed.

First claim

The invention claimed is:

1. A multi-ingot furnace for the growth of crystalline semiconductor material, the furnace comprising:
a housing defining a hot zone for receiving an array of crucibles containing semiconductor material;
at least one heating device for heating the semiconductor material;
characterised in that
the or each heating device is arranged to apply a predetermined differential heat flux profile to a horizontal cross-section of the semiconductor material in one or more crucibles, wherein the heat flux profile is selected in dependence on the position within the array of the one or more crucibles.

2. A furnace according to claim 1 , the furnace comprising a plurality of heating devices, wherein each heating device is associated with a single crucible and is arranged to apply the predetermined differential heat flux profile to the horizontal cross-section of semiconductor material in the associated single crucible.

3. A furnace according to claim 1 , wherein the predetermined differential heat flux profile comprises only one plane of symmetry perpendicular to the horizontal cross-section of the semiconductor material, and the plane of symmetry passes through a geometric centre of the array.

4. A furnace according to claim 3 , wherein the physical geometry of the heating device is symmetrical with respect to the plane of symmetry of the predetermined differential heat flux profile which passes through a geometric centre of the array.

5. A furnace according to claim 3 , wherein the predetermined heat flux profile varies along a line of intersection between the horizontal cross-section of the semiconductor material and the plane of symmetry of the predetermined differential heat flux profile which passes through a geometric centre of the array.

6. A furnace according to claim 1 , wherein the heating device is a resistance heater comprising at least one resistive heating element.

7. A furnace according to claim 6 , wherein heating device comprises a plurality of resistive heating elements, and wherein the resistive heating elements are provided in at least two differing configurations.

8. A furnace according to claim 7 , wherein at least two differing configurations comprise variations in physical geometry of the resistive heating elements.

9. A furnace according to claim 6 , wherein at least one resistive heating element is configured to generate a variable total heat flux per unit length projected on a line passing through its contact points with a power supply.

10. A furnace according to claim 9 , wherein the at least one heating element extends between parallel conductor rails and comprises:
at least one primary section in contact with one of the conductor rails;
one or more secondary sections, wherein the at least one primary section and the one or more secondary sections extend perpendicular to the conductor rails, and are offset from one another, and
a connecting section extending between at least one primary section and the one or more secondary sections, such that heating element generates increased total heat flux per unit length along the line passing through its contact points in the region of the connecting section.

11. A furnace according to claim 1 , wherein the furnace further comprises a plurality of process chambers within the hot zone, wherein each chamber is arranged to receive one of the crucibles of the array.

12. A furnace according to claim 1 , wherein the or each heating device is a top heating device disposed above the semiconductor material.

13. A furnace according to claim 1 , wherein the or each heating device comprises a plurality of heating elements arranged in a plurality of groups, wherein the heating device further comprises an independent power supply for each group.

14. A furnace according to claim 1 , further comprising at least one separator disposed between the or each heating device and the semiconductor material.

15. A furnace according to claim 1 , wherein the crystalline semiconductor material is for use as photovoltaic material for converting incident radiation into electrical charge.

16. A method of operating a multi-ingot furnace for the growth of a crystalline semiconductor material, wherein the method comprises heating a process chamber using a heating device which applies a predetermined differential heat flux profile to a horizontal cross-section of semiconductor material within one or more crucibles, the predetermined differential heat flux profile being selected in dependence on the position of the one or more crucibles within an array.

17. A method according to claim 16 , wherein the crystalline semiconductor material is for use as photovoltaic material for converting incident radiation into electrical charge.

18. A method of growing crystalline semiconductor material, comprising:
loading a furnace process chamber with material to be heated;
closing the furnace;
evacuating the air within the process chamber;
supplying a flow of the gas into the process chamber;
heating the material while performing the method according to claim 16 ;
cooling the material;
evacuating the gas;
aligning the pressure in the process chamber to atmospheric pressure;
opening the furnace; and
removing the material.

Assignees

• Bakke Per
• Vladimirov Egor
• Homayonifar Pouria
• Teixeira Alexandre
• Rec Solar Pte Ltd

Inventors

• Bakke Per
• Vladimirov Egor
• Homayonifar Pouria
• Teixeira Alexandre

Classifications

• H10P95/90

  Thermal treatments, e.g. annealing or sintering · CPC title

• H10P72/0451

  Apparatus for manufacturing or treating in a plurality of work-stations · CPC title

• H10P72/0431 Primary

  Apparatus for thermal treatment · CPC title

• C30B11/003

  Heating or cooling of the melt or the crystallised material · CPC title

• C30B11/002 Primary

  Crucibles or containers for supporting the melt · CPC title