High-purity 1H-heptafluorocyclopentene

Patent metadata

Field	Value
Publication number	US-9944852-B2
Application number	US-201414769264-A
Country	US
Kind code	B2
Filing date	Feb 19, 2014
Priority date	Feb 21, 2013
Publication date	Apr 17, 2018
Grant date	Apr 17, 2018

Abstract

The present invention is a 1H-Heptafluorocyclopentene having a purity of 99.9 wt % or more and an organochlorine-based compound content of 350 ppm by weight or less. The present invention provides a high-purity 1H-Heptafluorocyclopentene that may be useful as a plasma reaction gas for semiconductors.

First claim

The invention claimed is:

1. 1H-Heptafluorocyclopentene having a purity of 99.9 wt % or more, an organochlorine-based compound content of 338 ppm by weight or less, a nitrogen content of 100 ppm by volume or less, and an oxygen content of 50 ppm by volume or less.

2. The 1H-heptafluorocyclopentene according to claim 1 , the 1H-heptafluorocyclopentene being obtained by performing a step (I) that hydrogenates 1-chloroheptafluorocyclopentene through a gas phase reaction in the presence of a catalyst to obtain crude 1H-heptafluorocyclopentene, and a step (II) that purifies the crude 1H-heptafluorocyclopentene obtained by the step (I) using a rectifying column that has a number of theoretical plates of 50 or more.

3. The 1H-heptafluorocyclopentene according to claim 1 , wherein the organochlorine-based compound is either or both of chlorononafluorocyclopentane and chloroheptafluorocyclopentene.

4. The 1H-heptafluorocyclopentene according to claim 3 , the 1H-heptafluorocyclopentene having a water content of 20 ppm by weight or less.

5. A method for using the 1H-heptafluorocyclopentene according to claim 1 as a dry etching gas.

6. A method for using the 1H-heptafluorocyclopentene according to claim 1 as a plasma CVD reactive gas.

7. A container equipped with a valve that is filled with the 1H-heptafluorocyclopentene according to claim 4 .

Assignees

• Zeon Corp

Inventors

• Sugimoto Tatsuya

Classifications

• H10P14/6328

  Deposition from the gas or vapour phase · CPC title

• H10P14/24

  using chemical vapour deposition [CVD] · CPC title

• H10P50/242

  of Group IV materials · CPC title

• H10P14/6336

  in the presence of a plasma [PECVD] · CPC title

• H10P14/6334

  using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition (deposition by physical ablation of a target H10P14/6329) · CPC title