Methods of forming semiconductor structures with sulfur dioxide etch chemistries

Patent metadata

Field	Value
Publication number	US-9105587-B2
Application number	US-201213672460-A
Country	US
Kind code	B2
Filing date	Nov 8, 2012
Priority date	Nov 8, 2012
Publication date	Aug 11, 2015
Grant date	Aug 11, 2015

Abstract

Methods of forming a semiconductor device structure and sulfur dioxide etch chemistries. The methods and chemistries, which may be plasma chemistries, include use of sulfur dioxide and a halogen-based compound to form a trimmed pattern of a patterning material, such as a resist material, at a critical dimension with low feature width roughness, with low space width roughness, without excessive height loss, and without substantial irregularities in the elevational profile, as compared to trimmed features formed using conventional chemistries and trimming methods.

First claim

What is claimed is:

1. A method of forming a semiconductor device structure, comprising:
forming a patterning material over a base material;
exposing the patterning material to a chemistry comprising sulfur dioxide and a halogen-based compound while applying a bias power to remove at least a portion of the patterning material and define a plurality of features in the patterning material;
after exposing the patterning material to the chemistry comprising sulfur dioxide and the…

Assignees

• Micron Technology Inc

Inventors

• Yang Guangjun

Classifications

• H10P76/4088

  Electricity · mapped topic

• H10P76/4085

  Electricity · mapped topic

• H10P76/204

  Electricity · mapped topic

• H10P50/287

  Electricity · mapped topic

• C09K13/04

  Chemistry & Metallurgy · mapped topic