Metal/ceramic bonding substrate and method for producing same

Patent metadata

Field	Value
Publication number	US-9944565-B2
Application number	US-201214443505-A
Country	US
Kind code	B2
Filing date	Nov 20, 2012
Priority date	Nov 20, 2012
Publication date	Apr 17, 2018
Grant date	Apr 17, 2018

Abstract

After a wet blasting treatment for jetting a slurry, which contains spherical alumina as abrasive grains in a liquid, to the surface of a ceramic substrate 10 of aluminum nitride sintered body so that the ceramic substrate 10 has a residual stress of not higher than −50 MPa and so that the surface of the ceramic substrate 10 to be bonded to the metal plate 14 has an arithmetic average roughness Ra of 0.15 to 0.30 μm, a ten-point average roughness Rz of 0.7 to 1.1 μm and a maximum height Ry of 0.9 to 1.7 μm while causing the ceramic substrate to have a flexural strength of not higher than 500 MPa and causing the thickness of a residual stress layer 10 a formed along the surface of the ceramic substrate 10 to be 25 μm or less, the metal plate 14 of copper or a copper alloy is bonded to the ceramic substrate 10 , which is obtained by the wet blasting treatment, via a brazing filler metal 12 to produce a metal/ceramic bonding substrate which has an excellent bonding strength of the ceramic substrate 10 to the metal plate 14 and which has an excellent heat cycle resistance.

First claim

The invention claimed is:

1. A metal/ceramic bonding substrate comprising:
a ceramic substrate of aluminum nitride; and

a metal plate bonded to the ceramic substrate, wherein the ceramic substrate has a residual stress of not higher than −50 MPa and wherein a bonded surface of the ceramic substrate to the metal plate has an arithmetic average roughness Ra of 0.15 to 0.30 μm, and
wherein said ceramic substrate has a flexural strength of 250-450 MPa.

2. A metal/ceramic bonding substrate as set forth in claim 1 , wherein said bonded surface of the ceramic substrate to the metal plate has a ten-point average roughness Rz of 0.7 to 1.1 μm.

3. A metal/ceramic bonding substrate as set forth in claim 1 , wherein said bonded surface of the ceramic substrate to the metal plate has a maximum height Ry of 0.9 to 1.7 μm.

4. A metal/ceramic bonding substrate as set forth in claim 1 , wherein a thickness of a compressed residual stress layer formed along the surface of said ceramic substrate between the surface of the ceramic substrate and a portion of the ceramic substrate at a predetermined depth from the surface of the ceramic substrate is 25 μm or less.

5. A metal/ceramic bonding substrate as set forth in claim 1 , wherein said metal plate is bonded to said ceramic substrate via a brazing filler metal.

6. A metal/ceramic bonding substrate as set forth in claim 1 , wherein said metal plate is made of copper or a copper alloy.

7. A metal/ceramic bonding substrate as set forth in claim 1 , wherein said arithmetic average roughness Ra is in the range of from 0.15 μm to 0.25 μm.

8. A method for producing a metal/ceramic bonding substrate, the method comprising the steps of:
preparing a ceramic substrate of aluminum nitride and a metal plate;
carrying out a treatment for jetting a slurry, which contains abrasive grains in a liquid, to a surface of the ceramic substrate so that the ceramic substrate has a residual stress of not higher than −50 MPa and so that the surface of the ceramic substrate to be bonded to the metal plate has an arithmetic average roughness Ra of 0.15 to 0.30 μm; and

bonding the metal plate to the ceramic substrate obtained by the treatment,
wherein the treated ceramic substrate has a flexural strength of 250-450 MPa.

9. A method for producing a metal/ceramic bonding substrate as set forth in claim 8 , wherein the slurry jetting treatment is carried out so that the surface of the ceramic substrate to be bonded to the metal plate has a ten-point average roughness Rz of 0.7 to 1.1 μm.

10. A method for producing a metal/ceramic bonding substrate as set forth in claim 8 , wherein the slurry jetting treatment is carried out so that the surface of the ceramic substrate to be bonded to the metal plate has a maximum height Ry of 0.9 to 1.7 μm.

11. A method for producing a metal/ceramic bonding substrate as set forth in claim 8 , wherein the slurry jetting treatment is carried out so as to decrease a flexural strength of said ceramic substrate.

12. A method for producing a metal/ceramic bonding substrate as set forth in claim 8 , wherein the slurry jetting treatment is carried out so that a thickness of a compressed residual stress layer formed along the surface of said ceramic substrate between the surface of the ceramic substrate and a portion of the ceramic substrate at a predetermined depth from the surface of the ceramic substrate is 25 μm or less.

13. A method for producing a metal/ceramic bonding substrate as set forth in claim 8 , wherein said metal plate is bonded to said ceramic substrate via a brazing filler metal.

14. A method for producing a metal/ceramic bonding substrate as set forth in claim 8 , wherein said metal plate is made of copper or a copper alloy.

15. A method for producing a metal/ceramic bonding substrate as set forth in claim 8 , wherein said abrasive grains are made of spherical alumina.

16. A method for producing a metal/ceramic bonding substrate as set forth in claim 8 , wherein the treatment for jetting the slurry containing the abrasive grains in the liquid is a treatment for jetting a slurry, which contains 10 to 30% by volume of abrasive grains having a higher hardness than that of said ceramic substrate, for 0.02 to 1.0 second with compressed air so that a pressure applied to the surface of said ceramic substrate to be treated is in the range of from 0.10 MPa to 0.25 MPa.

Assignees

• Dowa Metaltech Co Ltd
• Tokuyama Corp
• Dowa Metaltech Co Ltd

Inventors

• Osanai Hideyo
• Kitamura Yukihiro
• Aoki Hiroto
• Kanechika Yukihiro
• Sugawara Ken
• Takeda Yasuko

Classifications

• H10W40/255

  having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates · CPC title

• H01L2924/0002

  Electricity · mapped topic

• H05K3/38

  Improvement of the adhesion between the insulating substrate and the metal · CPC title

• B23K1/19

  taking account of the properties of the materials to be soldered · CPC title

• C04B37/026

  consisting of metals or metal salts · CPC title