Magnetic random access memory with multilayered seed structure
US-2015340598-A1 · Nov 26, 2015 · US
Double spin filter tunnel junction
US9941469B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9941469-B2 |
| Application number | US-201514876266-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 6, 2015 |
| Priority date | Oct 6, 2015 |
| Publication date | Apr 10, 2018 |
| Grant date | Apr 10, 2018 |
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Abstract
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A memory device that includes a first magnetic insulating tunnel barrier reference layer present on a first non-magnetic metal electrode, and a free magnetic metal layer present on the first magnetic insulating tunnel barrier reference layer. A second magnetic insulating tunnel barrier reference layer may be present on the free magnetic metal layer, and a second non-magnetic metal electrode may be present on the second magnetic insulating tunnel barrier. The first and second magnetic insulating tunnel barrier reference layers are arranged so that their magnetizations are aligned to be anti-parallel.
First claim
Opening claim text (preview).
What is claimed is: 1. A memory device comprising: a first magnetic insulating tunnel barrier reference layer; a free magnetic metal layer present on the first magnetic insulating tunnel barrier reference layer; a second magnetic insulating tunnel barrier reference layer present on the free magnetic metal layer; wherein the first and second magnetic insulating tunnel barrier reference layers are arranged so that their magnetizations are aligned to be anti-parallel; and wherein each of the first magnetic insulating tunnel barrier reference layer and the second magnetic insulating tunnel barrier reference layer includes an insulating material that is ferromagnetic. 2. The memory device of claim 1 further comprising a first metal electrode in contact with the first magnetic insulating tunnel barrier reference layer. 3. The memory device of claim 1 , wherein the free magnetic metal layer comprises CoFeB. 4. The memory device of claim 1 , wherein the free magnetic metal layer comprises alloys and/or multilayers including elements selected from the group consisting of Fe, Ni, Co, Cr, V, Mn, Pd, Pt, B, O, N and combinations thereof. 5. The memory device of claim 1 , wherein the first magnetic insulating tunnel barrier reference layer, the free magnetic metal layer, and the second magnetic insulating tunnel barrier reference layer provide a magnetic tunnel junction (MJT). 6. A spin torque transfer magnetic random access memory device comprising: a magnetic tunnel junction stack between a pair of electrodes, wherein the magnetic tunnel junction stack comprises a first magnetic insulating tunnel barrier reference layer that is direct contact with a first face of a free magnetic metal layer; and wherein the first magnetic insulating tunnel barrier reference layer includes an insulating material that is ferromagnetic. 7. The spin torque transfer magnetic random access memory device of claim 6 , wherein a non-magnetic insulating tunnel barrier is present on a second face of the free magnetic metal layer, and a magnetic metallic reference layer is present on the non-magnetic insulating tunnel barrier layer.
Assignees
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Classifications
Electricity · mapped topic
details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell · CPC title
Electricity · mapped topic
- H01L43/10Primary
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US9941469B2 cover?
- A memory device that includes a first magnetic insulating tunnel barrier reference layer present on a first non-magnetic metal electrode, and a free magnetic metal layer present on the first magnetic insulating tunnel barrier reference layer. A second magnetic insulating tunnel barrier reference layer may be present on the free magnetic metal layer, and a second non-magnetic metal electrode may…
- Who is the assignee on this patent?
- IBM
- What technology area does this patent fall under?
- Primary CPC classification H01L43/10. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Apr 10 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).