Photovoltaic cell set and cell module with an electronic circuit having a measurement area
US-2024154572-A1 · May 9, 2024 · US
US9941424B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9941424-B2 |
| Application number | US-201113878307-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 27, 2011 |
| Priority date | Oct 6, 2010 |
| Publication date | Apr 10, 2018 |
| Grant date | Apr 10, 2018 |
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A solar cell according to the embodiment includes a substrate; a first electrode layer on a substrate; a light absorbing layer on the first electrode layer; a second electrode layer including a transmissive conductive material on the light absorbing layer; and a grid electrode including a transmissive conductive material on the second electrode layer.
Opening claim text (preview).
The invention claimed is: 1. A solar cell comprising: a substrate; a first electrode layer on the substrate; a light absorbing layer on the first electrode layer; a second electrode layer including a transmissive conductive material on the light absorbing layer, wherein the second electrode layer includes a bottom surface and a top surface opposite from the bottom surface; and a grid electrode protruded from the top surface of the second electrode layer, wherein the grid electrode includes a top surface and a bottom portion adjacent to the top surface of the second electrode layer; wherein a width of the bottom portion of the grid electrode is greater than a width of the top surface of the grid electrode; wherein the grid electrode comprises the same material as that of the second electrode layer; wherein the grid electrode is integrally formed with the second electrode layer; wherein the first electrode comprises Mo, Cu, Ni, or Al; wherein the first electrode is in direct physical contact with the substrate; wherein the light absorbing layer comprises Cu—In—Ga—Se (CIGS) compounds, Cu—In—Se— (CIS) compounds, or Cu—Ga—Se (CGS) compounds; wherein the second electrode layer has a thickness in a range of from 0.5 mm to 1 mm; wherein a thickness of the grid electrode is greater than a thickness of the second electrode layer; and wherein a ratio of a thickness of the grid electrode to a thickness of the second electrode layer is in a range of from 1.5 to 3. 2. The solar cell of claim 1 , wherein the grid electrode includes a transparent conductive material. 3. The solar cell of claim 2 , wherein the grid electrode includes at least one selected from the group consisting of aluminum-doped zinc oxide (AZO), fluorine-doped tin oxide (FTO), gallium-doped zinc oxide (GZO), and boron-doped zinc oxide (BZO). 4. The solar cell of claim 1 , wherein the second electrode layer has the characteristics of an N type semiconductor.
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