Light transmission type solar cell and method for producing the same

US9136405B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9136405-B2
Application numberUS-70006310-A
CountryUS
Kind codeB2
Filing dateFeb 4, 2010
Priority dateMar 18, 2009
Publication dateSep 15, 2015
Grant dateSep 15, 2015

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Abstract

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The present invention provides a light transmission type solar cell excellent in both power generation efficiency and light transparency, and also provides a method for producing that solar cell. The solar cell of the present invention comprises a photoelectric conversion layer, a light-incident side electrode layer, and a counter electrode layer. The incident side electrode layer is provided with plural openings bored through the layer, and has a thickness of 10 nm to 200 nm. Each of the openings occupies an area of 80 nm 2 to 0.8 μm 2 , and the opening ratio is in the range of 10% to 66%. The transmittance of the whole cell is 5% or more at 700 nm wavelength. The incident side electrode layer can be formed by etching fabrication with a stamper. In the etching fabrication, a mono-particle layer of fine particles or a dot pattern formed by self-assembled block copolymer can be used as a mask.

First claim

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The invention claimed is: 1. A solar cell comprising: a photoelectric conversion layer comprising at least p-type semiconductor and n-type semiconductor and having a thickness of 500 nm or less, wherein the semiconductor is selected from the group consisting of single crystal silicon, poly-crystal silicon, and amorphous silicon, a light-incident side electrode layer comprising a thin metal film formed on a light-incident surface of said photoelectric conversion layer, and a co…

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What does patent US9136405B2 cover?
The present invention provides a light transmission type solar cell excellent in both power generation efficiency and light transparency, and also provides a method for producing that solar cell. The solar cell of the present invention comprises a photoelectric conversion layer, a light-incident side electrode layer, and a counter electrode layer. The incident side electrode layer is provided w…
Who is the assignee on this patent?
Tsutsumi Eishi, Masunaga Kumi, Kitagawa Ryota, and 5 more
What technology area does this patent fall under?
Primary CPC classification H10F77/215. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Sep 15 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).