Photovoltaic cell set and cell module with an electronic circuit having a measurement area
US-2024154572-A1 · May 9, 2024 · US
US9136405B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9136405-B2 |
| Application number | US-70006310-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 4, 2010 |
| Priority date | Mar 18, 2009 |
| Publication date | Sep 15, 2015 |
| Grant date | Sep 15, 2015 |
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The present invention provides a light transmission type solar cell excellent in both power generation efficiency and light transparency, and also provides a method for producing that solar cell. The solar cell of the present invention comprises a photoelectric conversion layer, a light-incident side electrode layer, and a counter electrode layer. The incident side electrode layer is provided with plural openings bored through the layer, and has a thickness of 10 nm to 200 nm. Each of the openings occupies an area of 80 nm 2 to 0.8 μm 2 , and the opening ratio is in the range of 10% to 66%. The transmittance of the whole cell is 5% or more at 700 nm wavelength. The incident side electrode layer can be formed by etching fabrication with a stamper. In the etching fabrication, a mono-particle layer of fine particles or a dot pattern formed by self-assembled block copolymer can be used as a mask.
Opening claim text (preview).
The invention claimed is: 1. A solar cell comprising: a photoelectric conversion layer comprising at least p-type semiconductor and n-type semiconductor and having a thickness of 500 nm or less, wherein the semiconductor is selected from the group consisting of single crystal silicon, poly-crystal silicon, and amorphous silicon, a light-incident side electrode layer comprising a thin metal film formed on a light-incident surface of said photoelectric conversion layer, and a co…
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