Organometallic precursors and methods of forming thin layers using the same

Patent metadata

Field	Value
Publication number	US-9941114-B2
Application number	US-201514611691-A
Country	US
Kind code	B2
Filing date	Feb 2, 2015
Priority date	Mar 10, 2014
Publication date	Apr 10, 2018
Grant date	Apr 10, 2018

Abstract

An organometallic precursor is represented by a chemical formula of Xn(M)(R1)m(R2)k. M is a central metal. X is a ligand of M and one of 6,6-dimethylfulvenyl, indenyl, cyclopentadienyl and cyclopentadienyl substituted with an amino group. R1 and R2 are ligands of M, and each independently an amino group or an ethylenediamino group. Each n, m and k is a positive integer, and a sum of n, m and k is equal to 3 or 4.

First claim

What is claimed is:

1. An organometallic precursor represented by Chemical Formula 1:
X n (M)(R1) m (R2) k   [Chemical Formula 1]

wherein M is a central metal,
X is a ligand of M and one of 6,6-dimethylfulvenyl, indenyl, cyclopentadienyl and cyclopentadienyl substituted with a first amino group,
R1 and R2 are ligands of M, and each independently a second amino group or an ethylenediamino group,
each one of n, m and k is a positive integer, and a sum of n, m and k is equal to one of 3 and 4.

2. The organometallic precursor of claim 1 , wherein the central metal is one of zirconium, hafnium and titanium.

3. The organometallic precursor of claim 1 , wherein the second amino group and the ethylenediamino group of R1 and R2 each independently include a C 1 -C 4 alkyl substituent.

4. The organometallic precursor of claim 1 , wherein X is 6,6-dimethylfulvenyl or indenyl, R1 and R2 are each independently the second amino group, n is equal to 1, and m+k is equal to 3.

5. The organometallic precursor of claim 1 , wherein X comprises cyclopentadienyl substituted with the first amino group, and X is a multidendate ligand.

6. The organometallic precursor of claim 5 , wherein the organometallic precursor is represented by Structural Formula 1:

wherein M is a central metal, R3 and R4 are each independently methyl or ethyl, and R5 is a C 1 -C 4 alkyl.

7. The organometallic precursor of claim 1 , wherein R1 is the second amino group, R2 is the ethylenediamino group, and each of n, m and k is equal to 1.

8. The organometallic precursor of claim 7 , wherein the organometallic precursor is represented by Structural Formula 2:

wherein M is a central metal, R3 and R4 are each independently methyl or ethyl, and R6 is a C1-C4 alkyl.

9. A method of forming a thin layer, comprising:
providing a deposition source including an organometallic precursor represented by Chemical Formula 1 on a substrate; and
providing a reactive gas on the substrate to react with the deposition source,
X n (M)(R1) m (R2) k   [Chemical Formula 1]

wherein M is a central metal,
X is a ligand of M and one of 6,6-dimethylfulvenyl, indenyl, cyclopentadienyl and cyclopentadienyl substituted with a first amino group,
R1 and R2 are ligands of M, and each independently a second amino group or an ethylenediamino group, and
each of n, m and k is a positive integer, and a sum of n, m and k is equal to one of 3 and 4.

10. The method of claim 9 , wherein the central metal is one of zirconium, hafnium and titanium.

11. The method of claim 10 , wherein the deposition source includes at least two organometallic precursors, the central metals of which are different from each other.

12. The method of claim 9 , wherein the deposition source further includes a silicon compound.

13. The method of claim 9 , wherein the reactive gas includes at least one of an oxidizing agent, a reducing agent and a nitridating agent.

14. The method of claim 9 , wherein the reactive gas and the deposition source are configured to react with each other at a temperature ranging from about 200° C. to about 325° C.

15. The method of claim 9 , wherein the organometallic precursor includes at least one compound from a plurality of compounds represented by Structural Formulas 1 to 4:

wherein M is a central metal, R3 and R4 are each independently methyl or ethyl, and R5 and R6 are each independently a C 1 -C 4 alkyl.

16. A deposition structure comprising:
a substrate;
a deposition layer on the substrate, the deposition layer including an organometallic precursor represented by the following formula:
X n (M)(R1) m (R2) k

M being a metal,
X being a ligand of M and one of 6,6-dimethylfulvenyl, indenyl, cyclopentadienyl and cyclopentadienyl substituted with a first amino group,
R1 and R2 being ligands of M, and each independently being a second amino group or an ethylenediamino group,
each one of n, m and k being a positive integer, and a sum of n, m and k is equal to one of 3 and 4.

17. The deposition structure of claim 16 , wherein a thickness of the deposition layer is substantially uniform when deposited on a concave surface.

18. The deposition structure of claim 16 , wherein the metal is one of zirconium, hafnium and titanium.

19. The deposition structure of claim 16 , wherein the organometallic precursor is represented by Structural Formula 1:

wherein M is a central metal, R3 and R4 are each independently methyl or ethyl, and R5 is a C 1 -C 4 alkyl.

20. The deposition structure of claim 16 , wherein the organometallic precursor is represented by Structural Formula 2:

wherein M is a central metal, R3 and R4 are each independently methyl or ethyl, and R6 is a C1-C4 alkyl.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Cho Youn-Joung
• Kim Youn-Soo
• Yim Sang-Jun
• Kim Myong-Woon
• Lee Sang-Ick
• Youn Sang-Chul

Classifications

• H10P14/69395

  the material containing zirconium, e.g. ZrO2 · CPC title

• H10W74/137

  the encapsulations being directly on the semiconductor body (H10W74/134 takes precedence) · CPC title

• H10W74/43

  comprising oxides, nitrides or carbides, e.g. ceramics or glasses · CPC title

• H10P14/6339 Primary

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

• H01L21/02189

  Electricity · mapped topic