High dose implantation strip (HDIS) in H2 base chemistry

Patent metadata

Field	Value
Publication number	US-9941108-B2
Application number	US-201414171564-A
Country	US
Kind code	B2
Filing date	Feb 3, 2014
Priority date	Dec 13, 2004
Publication date	Apr 10, 2018
Grant date	Apr 10, 2018

Abstract

Plasma is generated using elemental hydrogen, a weak oxidizing agent, and a fluorine containing gas. An inert gas is introduced to the plasma downstream of the plasma source and upstream of a showerhead that directs gas mixture into the reaction chamber where the mixture reacts with the high-dose implant resist. The process removes both the crust and bulk resist layers at a high strip rate, and leaves the work piece surface substantially residue free with low silicon loss.

First claim

What is claimed is:

1. A method of removing material from a work piece surface in a reaction chamber, the method comprising:
introducing a gas comprising hydrogen (H 2 ), a weak oxidizing agent, and a fluorine-containing gas into a plasma source;
generating a plasma from the gas introduced into the plasma source; and
exposing the material to the plasma to remove the material from the work piece.

2. The method of claim 1 , further comprising introducing an inert gas to the plasma via a gas inlet that is downstream of the plasma source and upstream of the work piece.

3. The method of claim 1 , wherein the weak oxidizing agent is selected from carbon dioxide, carbon monoxide, nitrogen dioxide, nitrogen oxide, nitrous oxide, and hydrogen peroxide, and combinations thereof.

4. The method of claim 1 , wherein the plasma source is upstream of a showerhead in the reaction chamber.

5. The method of claim 4 , wherein electrically charged species in the plasma are discharged when they contact the showerhead.

6. The method of claim 1 , wherein the gas introduced into the plasma source comprises between about 0.1% to about 1% by volume of the weak oxidizing agent.

7. The method of claim 1 , wherein the gas introduced to the plasma source does not comprise oxygen (O 2 ).

8. The method of claim 2 , wherein the fluorine-containing gas is selected from carbon tetrafluoride, fluorine, nitrogen trifluoride, and sulfur hexafluoride.

9. The method of claim 2 , wherein the fluorine-containing gas is a fluorocarbon.

10. The method of claim 1 , wherein the fluorine-containing gas is nitrogen trifluoride.

11. The method of claim 1 , wherein the weak oxidizing agent is carbon dioxide.

12. The method of claim 4 , wherein the gas inlet is upstream of the showerhead.

13. A method of removing material from a work piece surface in a reaction chamber, the method comprising:
introducing a gas comprising hydrogen (H 2 ), nitrogen trifluoride, and a weak oxidizing agent into a plasma source, wherein the weak oxidizing agent is selected from the group consisting of carbon dioxide, carbon monoxide, nitrogen dioxide, nitrogen oxide, and water;
generating a plasma from the gas introduced into the plasma source; and
exposing the material to the plasma to remove the material from the work piece.

14. The method of claim 13 , further comprising introducing an inert gas to the plasma via a gas inlet that is downstream of the plasma source.

15. The method of claim 13 , wherein the weak oxidizing agent is about 0.1% to 10% by volume of the weak oxidizing agent.

Assignees

• Novellus Systems Inc

Inventors

• Goto Haruhiro Harry
• Cheung David

Classifications

• H10P72/0402

  Apparatus for fluid treatment (H10P72/0441, H10P72/0448 take precedence) · CPC title

• H10P50/287

  by chemical means · CPC title

• H10P70/00 Primary

  Cleaning of wafers, substrates or parts of devices · CPC title

• H01L21/31138

  Electricity · mapped topic

• H01L21/67017

  Electricity · mapped topic