System for manufacturing a crystalline material by directional crystallization provided with an additional lateral heat source

Patent metadata

Field	Value
Publication number	US-9938633-B2
Application number	US-201214240818-A
Country	US
Kind code	B2
Filing date	Aug 31, 2012
Priority date	Aug 31, 2011
Publication date	Apr 10, 2018
Grant date	Apr 10, 2018

Abstract

The crystallization system includes a crucible provided with a bottom and with side walls designed to contain the material to be solidified and a device for creating a main thermal gradient inside the crucible in a perpendicular direction to the bottom of the crucible. An additional inductive heating device is arranged at the level of the side walls of the crucible facing the liquid material and without overlapping with the solid phase. This additional inductive heating device is configured to heat a part of the crystalline material located in the vicinity of the triple contact line between the liquid material, the solidified material and the crucible so that the interface between the liquid material and the solidified material forms a convex meniscus in the vicinity of the triple contact line.

First claim

The invention claimed is:

1. A method for performing fabrication of a crystalline material by directional solidification comprising the following steps:
providing a crucible equipped with a bottom and a side wall and at least partially filled by the crystalline material in liquid phase,
generating a main thermal gradient inside the crucible in a first direction substantially perpendicular to the bottom of the crucible so as to obtain progressive solidification of the crystalline material in the first direction and starting from the bottom of the crucible, and
heating a part of the crystalline material located in the vicinity of the triple contact line formed at an intersection between the liquid crystalline material, the solidified crystalline material, and the side walls of the crucible, by means of an additional inductive heating device arranged at the level of the side walls of the crucible and mounted mobile with respect to the crucible in said first direction, so that the interface between the liquid crystalline material and the solidified crystalline material forms a convex meniscus in the vicinity of said triple contact line, the additional inductive heating device being arranged facing the liquid crystalline material and without overlapping with the solid crystalline phase.

2. The method according to claim 1 , wherein the ratio between the power delivered to the additional inductive heating device and the power delivered to a heating device configured for generating the main thermal gradient is comprised between 5% and 35%.

3. The method according to claim 1 , wherein the additional inductive heating device is formed by an inductive coil positioned at the level of the liquid/solid interface and facing the liquid crystalline material when the interface between the liquid crystalline material and the solidified crystalline material forms a convex meniscus in the vicinity of said triple contact line.

4. The method according to claim 3 , wherein the inductive coil is positioned at a distance comprised between 1 and 20 mm with respect to said triple contact line in the first direction.

5. The method according to claim 3 , wherein said crystalline material is a semiconductor material that presents a higher electric conductivity in liquid phase than in solid phase.

6. The method according to claim 1 , wherein the additional inductive heating device moves with respect to the bottom and to the side wall during solidification of the crystalline material.

7. The method according to claim 1 , wherein the liquid material is heated so as to form a liquid/solid interface coming in contact with the sidewalls of the crucible.

8. The method according to claim 1 , wherein a liquid/solid interface is formed having a first curvature in a central part of the crucible and a second curvature in the vicinity of the triple contact line, the first curvature being lower than the second curvature.

9. The method according to claim 8 , wherein the liquid/solid interface is substantially flat in the central part of the crucible.

Assignees

• Garandet Jean Paul
• Jouini Anis
• Pelletier David
• Commissariat Energie Atomique

Inventors

• Garandet Jean-Paul
• Jouini Anis
• Pelletier David

Classifications

• C30B11/008

  using centrifugal force to the charge · CPC title

• Y02P70/521

  Cross-Sectional Technologies · mapped topic

• C30B11/007

  Mechanisms for moving either the charge or the heater · CPC title

• H01L31/182

  Electricity · mapped topic

• Y02E10/546

  Polycrystalline silicon PV cells · CPC title