MEMS device and method of manufacturing a MEMS device

Patent metadata

Field	Value
Publication number	US-9938140-B2
Application number	US-201615206836-A
Country	US
Kind code	B2
Filing date	Jul 11, 2016
Priority date	Oct 12, 2012
Publication date	Apr 10, 2018
Grant date	Apr 10, 2018

Abstract

A method for manufacturing a MEMS device is disclosed. Moreover a MEMS device and a module including a MEMS device are disclosed. An embodiment includes a method for manufacturing MEMS devices includes forming a MEMS stack on a first main surface of a substrate, forming a polymer layer on a second main surface of the substrate and forming a first opening in the polymer layer and the substrate such that the first opening abuts the MEMS stack.

First claim

What is claimed is:

1. A method for manufacturing microelectromechanical systems (MEMS) devices, the method comprising:
forming a MEMS stack on a first main surface of a substrate;
mounting the MEMS stack on a carrier, the first main surface facing the carrier;
thinning the substrate from an opposite main surface to expose a second main surface;
depositing a polymer layer on the second main surface of the substrate;
forming a first opening in the polymer layer and the substrate, wherein the first opening is formed directly below the MEMS stack;
removing the carrier;
performing a release etch to form moveable components of the MEMS devices after forming the first opening; and
without removing the polymer layer, cutting the substrate to form individual MEMS devices so that each of the individual MEMS devices after the cutting includes a portion of the polymer layer.

2. The method according to claim 1 , wherein the MEMS stack comprises a sacrificial layer, and wherein the sacrificial layer is disposed over the entire first main surface of the substrate.

3. The method according to claim 1 , further comprising:
forming a second opening in the polymer layer while forming the first opening in the polymer layer; and
forming a third opening in the polymer layer between the second opening and the first opening, the third opening being formed around the first opening.

4. The method according to claim 1 , wherein the polymer layer is a negative photoresist.

5. The method according to claim 1 , wherein the polymer layer is a positive photoresist.

6. The method according to claim 1 , wherein the MEMS stack comprises a backplate and a membrane.

7. A method for manufacturing microelectromechanical systems (MEMS) devices, the method comprising:
forming a MEMS stack on a first main surface of a substrate;
mounting the MEMS stack on a carrier, the first main surface facing the carrier;
thinning the substrate from an opposite main surface to expose a second main surface;
depositing a polymer layer on the second main surface of the substrate;
forming a first opening in the polymer layer and the substrate, wherein the first opening is formed directly below the MEMS stack;
forming a second opening in the polymer layer and the substrate during the forming of the first opening in the polymer layer;
removing the carrier;
performing a release etch to form moveable components of the MEMS devices after forming the first opening; and
without removing the polymer layer, cutting the substrate to form individual MEMS devices.

8. The method according to claim 7 , further comprising:
forming an etch stop layer on the second main surface of the substrate, the etch stop layer not covering portions of the substrate opposite the MEMS stack.

9. The method according to claim 8 , wherein the etch stop layer is an etch stop during the forming of the first opening and the second opening.

10. The method according to claim 7 , wherein the MEMS stack comprises a sacrificial layer, and wherein the sacrificial layer is disposed over the entire first main surface of the substrate.

11. The method according to claim 7 , further comprising:
forming a second opening in the polymer layer while forming the first opening in the polymer layer; and
forming a third opening in the polymer layer between the second opening and the first opening, the third opening being formed around the first opening.

12. The method according to claim 7 , wherein the polymer layer is a negative photoresist.

13. The method according to claim 7 , wherein the polymer layer is a positive photoresist.

14. The method according to claim 7 , wherein the MEMS stack comprises a backplate and a membrane.

15. A method for manufacturing microelectromechanical systems (MEMS) devices, the method comprising:
forming a MEMS stack on a first main surface of a substrate;
mounting the MEMS stack on a carrier, the first main surface facing the carrier;
thinning the substrate from an opposite main surface to expose a second main surface;
forming an etch stop layer on the second main surface of the substrate, the etch stop layer not covering portions of the substrate opposite the MEMS stack;
depositing a polymer layer on the second main surface of the substrate and on the etch stop layer;
forming a first opening in the polymer layer and the substrate, wherein the first opening is formed directly below the MEMS stack;
removing the carrier;
performing a release etch to form moveable components of the MEMS devices after forming the first opening; and
without removing the polymer layer, cutting the substrate to form individual MEMS devices.

16. The method according to claim 15 , wherein the MEMS stack comprises a sacrificial layer, and wherein the sacrificial layer is disposed over the entire first main surface of the substrate.

17. The method according to claim 15 , further comprising forming a second opening in the polymer layer and the substrate during the forming of the first opening in the polymer layer.

18. The method according to claim 17 , wherein the etch stop layer is an etch stop during the forming of the first opening and the second opening.

19. The method according to claim 15 , further comprising:
forming a second opening in the polymer layer while forming the first opening in the polymer layer; and
forming a third opening in the polymer layer between the second opening and the first opening, the third opening being formed around the first opening.

20. The method according to claim 15 , wherein the polymer layer is a negative photoresist.

21. The method according to claim 15 , wherein the polymer layer is a positive photoresist.

22. The method according to claim 15 , wherein the MEMS stack comprises a backplate and a membrane.

Assignees

• Infineon Technologies Ag

Inventors

• Dehe Alfons
• Pindl Stephan
• Knott Bernhard
• Ahrens Carsten

Classifications

• B81B2201/0235

  Accelerometers · CPC title

• H04R19/04

  Microphones (H04R19/01 takes precedence) · CPC title

• H04R31/00

  Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor {(manufacture of microstructural arrangements of deformable or non-deformable structures in general B81C1/00182)} · CPC title

• B81B2201/0257

  Microphones or microspeakers · CPC title

• B81C2201/017

  Methods for controlling internal stress of deposited layers not provided for in B81C2201/0164 - B81C2201/0169 · CPC title