Optical semiconductor device

Patent metadata

Field	Value
Publication number	US-9935426-B2
Application number	US-201414316392-A
Country	US
Kind code	B2
Filing date	Jun 26, 2014
Priority date	Jun 27, 2013
Publication date	Apr 3, 2018
Grant date	Apr 3, 2018

Abstract

An optical semiconductor device is provided as one achieving reduction of power in phase control. The optical semiconductor device has: a first optical waveguide having a plurality of segments each of which has a diffraction grating region with a diffraction grating and a space portion coupled to the diffraction grating region, having two ends interposed between the diffraction grating regions, and having a constant optical length, wherein at least one of the segments is provided with a phase shift structure; a first phase control device for adjusting a phase of light in each segment with the phase shift structure; and a second phase control device for adjusting a phase of light in each segment without the phase shift structure.

First claim

What is claimed is:

1. A semiconductor laser that emits light, comprising:
an optical waveguide including a plurality of segments continuously arranged along a propagation direction of the light emitted from the semiconductor laser, the segments each having a diffraction grating region and a space portion, the diffraction grating region including a diffraction grating, the space portion including no diffraction gratings, the segments having a width common to the segments except for at least one of the segments;
a first phase control means provided in the at least one of the segments; and
a second phase control means provided in rest of the segments except for the at least one of the segments, the second phase control means being driven independent of the first phase control means.

2. The semiconductor laser of claim 1 ,
wherein, in the at least one of the segments, the space portion has a width different from the width common to the rest of the segments and the diffraction grating region has the width common to the rest of the segments.

3. The semiconductor laser of claim 1 ,
wherein the space portion in the at least one of the segments is put between the diffraction grating region of the at least one of the segments and the diffraction grating region of a segment arranged next to the at least one of the segments.

4. The semiconductor laser of claim 1 ,
wherein the optical waveguide includes a total N counts of the segments, n counts of the rest of the segments having the width common to the rest of the segments, and m counts of the at least one of the segments having another width different from the width common to the rest of the segments, where m is N−n, and
wherein the at least one of the segments having the another width each causes a phase shift of −n·π/(n+m) for the light propagating in the optical waveguide with respect to the phase shift caused by the rest of the segments.

5. The semiconductor laser of claim 1 ,
wherein the rest of the segments in a part thereof shows an optical gain.

6. The semiconductor laser of claim 1 ,
further comprising another optical waveguide that provides a plurality of segments arranged along the propagation direction, the segments in the another optical waveguide each having a diffraction grating region and a space portion, the diffraction grating region in the another optical waveguide having a diffraction grating, the space portion in the another optical waveguide having no diffraction gratings,
wherein the another optical waveguide is arranged next to the optical waveguide along the propagation direction and optically coupled with the optical waveguide.

7. The semiconductor laser of claim 6 ,
wherein the segment in the optical waveguide arranged closest to the another optical waveguide causes an additional phase shift of −0.5π.

8. The semiconductor laser of claim 1 ,
wherein the first phase control means and the second phase control means are provided in the space portions in the respective segments.

9. The semiconductor laser of claim 8 ,
wherein the first phase control means and the second phase control means are heaters that adjust optical lengths of the segments by varying temperatures thereof.

10. The semiconductor laser of claim 8 ,
further including a temperature control device that mounts the semiconductor laser thereon, the temperature control device varying a temperature of the semiconductor laser.

11. The semiconductor laser of claim 1 ,
wherein the segments in the optical waveguide constitute a sampled grating diffraction feedback (SG-DFB) structure.

12. The semiconductor laser of claim 11 ,
further comprising another optical waveguide that provides a plurality of segments arranged along the propagation direction, the segments in the another optical waveguide each having a diffraction grating region and a space portion, the diffraction grating region in the another optical waveguide having a diffraction grating, the space portion in the another optical waveguide having no diffraction gratings, the another optical waveguide being arranged next to the optical waveguide along the propagation direction and optically coupled with the optical waveguide,
wherein the segments in the another optical waveguide constitute a chirped sampled grating distributed Bragg reflector (CSG-DBR), and
wherein the CSG-DBR combined with the SG-DFB tunes a lasing wavelength of the semiconductor laser.

Assignees

• Sumitomo Electric Industries

Inventors

• Kaneko Toshimitsu

Classifications

• H01S5/06256 Primary

  with DBR-structure · CPC title

• H01S5/0612

  controlled by temperature · CPC title

• H01S5/1014

  Tapered waveguide, e.g. spotsize converter (H01S5/1064 takes precedence) · CPC title

• G02F1/0147

  based on thermo-optic effects (G02F1/132 takes precedence) · CPC title

• H01S5/34306

  emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers · CPC title