Hall effect device

Patent metadata

Field	Value
Publication number	US-9935259-B2
Application number	US-201715793399-A
Country	US
Kind code	B2
Filing date	Oct 25, 2017
Priority date	Sep 13, 2012
Publication date	Apr 3, 2018
Grant date	Apr 3, 2018

Abstract

A hall effect device includes an active Hall region in a semiconductor substrate, and at least four terminal structures, each terminal structure including a switchable supply contact element and a sense contact element, wherein each supply contact element includes a transistor element with a first transistor terminal, a second transistor terminal, and a control terminal, wherein the second transistor terminal contacts the active Hall region or extends in the active Hall region; and wherein the sense contact elements are arranged in the active Hall region and neighboring to the switchable supply contact elements.

First claim

The invention claimed is:

1. A method of manufacturing a Hall effect device indicative of a magnetic field, comprising:
providing an active Hall region of a first semiconductor type formed in or on top of a substrate, wherein the substrate comprises an isolation arrangement to isolate the Hall effect region in a lateral direction and a depth direction from the substrate or other electronic devices in the substrate;
providing a plurality of switchable supply contact elements at the active Hall region, wherein each switchable supply contact element comprises a transistor element with a first transistor terminal, a second transistor terminal, and a control terminal, wherein the second transistor terminal contacts the active Hall region or extends in the active Hall region; and
providing a plurality of sense contact elements in the active Hall region, wherein the sense contact elements are placed neighboring to the switchable supply contact elements and are spatially distinct from one another.

2. The method according to claim 1 , wherein the supply contact elements are formed as switchable supply contact elements, and wherein the sense contact elements and the switchable supply contact elements are formed to be separately connected to the active Hall region.

3. The method according to claim 1 , wherein the terminal structures are provided to form a first pair of opposing terminal structures and a second pair of opposing terminal structures, and wherein a first conjugation line between the opposing terminal structures of the first pair and a second conjugation line between the opposing terminal structures of the second pair orthogonally intersect in a center point of the active Hall region.

4. The Hall effect device according to claim 3 , wherein the first pair of opposing terminal structures is provided to comprise a first pair of opposing supply contact elements and a first pair of opposing sense contact elements, and wherein the second pair of opposing terminal structures is provided to comprise a second pair of opposing supply contact elements and a second pair of opposing sense contact elements.

5. The Hall effect device according to claim 4 , wherein the terminal structures of the first pair of opposing terminal structures are provided to respectively oppose each other with respect to the center point of the active Hall region, and wherein the terminal structures of the second pair of opposing terminal structures are provided to respectively oppose each other with respect to the center point of the active Hall region.

6. The Hall effect device according to claim 4 , wherein the first pair of opposing terminal structures and the second pair of opposing terminal structures are provided to be respectively situated rectangular to each other with respect to the center point of the active Hall region.

7. The method according to claim 1 , wherein the active Hall region is provided to have a boundary line in form of a n-sided polygon, wherein n is at least three.

8. The method according to claim 1 , wherein the active Hall region is provided to have a boundary line in form of a n-sided regular polygon, wherein n is 4 or a multiple of 4.

9. The Hall effect device according to claim 8 , wherein the active Hall region is provided to have n terminal structures, wherein the terminal structures are arranged at opposing sides of the regular polygon.

10. The Hall effect device according to claim 9 , wherein the terminal structures are arranged in a centered position with respect to a midpoint of the respective side of the regular polygon.

11. The Hall effect device according to claim 10 , wherein the active Hall region is provided to have n terminal structures, wherein the n terminal structures are arranged at opposing vertices of the regular polygon.

12. The method according to claim 1 , wherein the active Hall region is provided to have a boundary line in form of a n-armed cross, wherein n is at least three.

13. The method according to claim 1 , wherein the active Hall region is provided to have a boundary line in form of a n-armed cross, wherein n is 4 or a multiple of 4.

14. The Hall effect device according to claim 13 , wherein the active Hall region is provided to have n terminal structures, wherein the n terminal structures are arranged in opposing arms of the n-armed cross.

15. The method according to claim 1 , further comprising:
providing a control circuit for controlling an operation of the Hall effect device.

16. The Hall effect device according to claim 15 , wherein the control circuit is configured to apply a different phases of a spinning current operation to the terminal structures at the active Hall region.

17. The Hall effect device according to claim 16 , wherein the control circuit is configured to selectively switch on one of the pairs of opposing supply contact elements for feeding a biasing current in a predetermined current direction through the active Hall region, and to selectively switch off the remaining supply contact elements during each of the different phases of a spinning current operation.

18. The Hall effect device according to claim 15 , wherein the control circuit is configured to apply at least one mode of a calibration operation to the terminal structures at the active Hall region.

19. The method according to claim 1 , wherein the transistor element is formed as a bipolar junction transistor or a field effect transistor.

20. The method according to claim 1 , wherein the active Hall region is provided to comprise three triangular active sub-regions.

Assignees

• Infineon Technologies Ag

Inventors

• Kolb Stefan
• Eckinger Markus

Classifications

• G01R33/0052

  Manufacturing aspects; Manufacturing of single devices, i.e. of semiconductor magnetic sensor chips (devices based on galvano-magnetic effect or the like H10N50/85) · CPC title

• G01R33/075

  Hall devices configured for spinning current measurements · CPC title

• H01L43/04

  Electricity · mapped topic

• H01L43/14

  Electricity · mapped topic

• H01L43/065 Primary

  Electricity · mapped topic