Generation of flexible high power pulsed waveforms

Patent metadata

Field	Value
Publication number	US-9935218-B2
Application number	US-201514588467-A
Country	US
Kind code	B2
Filing date	Jan 2, 2015
Priority date	Jan 2, 2015
Publication date	Apr 3, 2018
Grant date	Apr 3, 2018

Abstract

A method for generating high power pulsed RF waveforms comprises the steps of charging a transmission line in a pulse forming network with a high-voltage and discharging the voltage on the transmission line to ground utilizing a gallium nitride photoconductive switch.

First claim

What is claimed is:

1. A method for generating high power pulsed variable-frequency RF waveforms, comprising the steps of:
charging a transmission line in a pulse forming network with a single-polarity high-voltage source of 20 KV, said pulse forming network comprising a conductor connected through contacts of a single gallium nitride photoconductive switch to a ground, wherein multiple pulses from a single charge of said transmission line interfere with each other to produce said RF waveform; and,
discharging the voltage on the transmission line to ground utilizing the single gallium nitride photoconductive switch, said single gallium nitride photoconductive switch comprising, in linear order, a first contact ( 38 ), an n+ epitaxial layer ( 36 ) in a first ohmic contact region, a GaN body ( 34 ), a p+ epitaxial layer ( 36 ) in a second ohmic contact region, and a second contact ( 40 );
wherein frequency of said high power pulsed RF waveform is controlled solely by modulation of pulses of laser radiation.

2. The method of claim 1 , wherein the gallium nitride photoconductive switch is activated by laser pulses from a picosecond laser.

3. The method of claim 2 , wherein said gallium nitride photoconductive switch is activated by laser pulses having a pulse width in a picosecond range.

4. The method of claim 3 , wherein activation of the gallium nitride photoconductive switch by laser pulses forms multiple RF pulses.

5. The method of claim 4 , wherein the multiple RF pulses from the picosecond laser have equal interpulse spacings.

6. The method of claim 4 , wherein the multiple RF pulses from the picosecond laser have variable interpulse spacings; wherein said variable interpulse spacings of said multiple RF pulses comprise 0.4, 0.55, 0.65, 0.8 and 1.2 nanoseconds.

7. The method of claim 5 , wherein, the charged transmission line is a parallel plate transmission line and is not significantly discharged through the gallium nitride photoconductive switch upon actuation thereof.

8. The method of claim 7 , wherein picosecond laser pulses are delivered to the gallium nitride photoconductive switch and wherein the gallium nitride photoconductive switch is closed in at least one of a nanosecond and a picosecond time frame responsive to delivered picosecond laser pulses.

9. The method of claim 8 , wherein the at least one nanosecond and picosecond time frame for the gallium nitride photoconductive switch closure permits rapid periodic discharging of the transmission line prior to the time that the energy stored in the transmission line has been depleted, thereby permitting the generation of rapid high power RF pulses.

10. The method of claim 9 , wherein an effective operating frequency of the RF pulses generated is correlated to the interpulse spacings due to said interference of the pulses within the pulse forming network.

11. The method of claim 10 , wherein the interpulse spacings are equal, and wherein the effective operating frequency is dependent upon the equal interpulse spacings, thereby permitting gigahertz operating frequencies;
wherein a frequency of 2 GHz is produced by pulses spaced apart by 0.4 ns, and
wherein a frequency of 750 MHz is produced by pulses spaced apart by 1.2 ns.

12. The method of claim 11 , wherein the operating frequency is tuned by changing the interpulse spacings, whereby a large frequency tuning range of 750 MHz to 3 GHz is achieved.

13. The method of claim 10 , wherein different interpulse spacings result in differing frequencies mixed in the pulse forming network to generate a waveform having flexible characteristics including the position of notches in the waveform characteristic.

14. The method of claim 13 , wherein the RF waveform output is modulated by modulation of the laser.

15. A waveform flexible photoconductive switch-based high power variable-frequency RF pulse generator having a photoconductive switch with a sub-nanosecond response time, comprising:
a single gallium nitride photoconductive switch, said single gallium nitride photoconductive switch comprising, in linear order, a first contact ( 38 ), an n+ epitaxial layer ( 36 ) in a first ohmic contact region, a GaN body ( 34 ), a p+ epitaxial layer ( 36 ) in a second ohmic contact region, and a second contact ( 40 );
a laser for activating said gallium nitride photoconductive switch;
an RF pulse forming network including a coaxial transmission line connected to said gallium nitride photoconductive switch, wherein activation of the switch discharges said transmission line through a center conductor of said transmission line through said single gallium nitride photoconductive switch to ground, wherein multiple pulses from a single charge of said coaxial transmission line interfere with each other to produce said high power RF pulse; and
a single polarity 20 kV high-voltage source coupled to said gallium nitride photoconductive switch;
wherein frequency of said high power pulsed RF waveform is controlled solely by modulation of pulses of laser radiation.

16. The high power RF generator of claim 15 , wherein said RF generator includes an antenna, and wherein said pulse forming network includes an impedance transformer between said transmission line and said antenna.

17. The high power RF generator of claim 15 , wherein said laser produces multiple picosecond activation pulses and wherein said picosecond laser pulses result in nanosecond wide resulting RF pulses due to the sub-nanosecond response time of the gallium nitride photoconductive switch.

18. The high power RF generator of claim 17 , wherein varying, by a laser modulator ( 15 ), the interpulse spacing of the multiple picosecond activation pulses changes a frequency of the output from said high power RF generator.

19. The high power RF generator of claim 18 , wherein said pulse forming network includes a transformer and wherein frequency output of said high power RF generator can be changed without altering said transformer.

20. The high power RF generator of claim 18 , wherein said interpulse spacing is tailored to provide high power RF pulses having variable frequency, power and repetition rate characteristics utilizing a single switching element.

21. The high power RF generator of claim 15 , wherein a short carrier lifetime associated with the gallium nitride switch permits achieving high pulse repetition rates in the tens-to-hundreds of megahertz.

22. The high power RF generator of claim 15 , wherein a short carrier lifetime associated with the gallium nitride switch permits generation of multiple RF pulses prior to the time that said transmission line is discharged.

23. The high power RF generator of claim 22 , wherein the generation of multiple RF pulses prior to the time that said transmission line is discharged permits increasing an amount of energy on a target.

24. A waveform flexible photoconductive switch-based high power variable-frequency RF pulse generator having a photoconductive switch with a sub-nanosecond response time, comprising:
a single gallium nitride photoconductive switch, said single gallium nitride photoconductive switch comprising, in linear order, a first contact ( 38 ), an n+ epitaxial layer ( 36 ) in a first ohmic contact region, a GaN body ( 34 ), a p+ epitaxial layer ( 36 ) in a second ohmic contact region, and a second contact ( 40 );
a laser for activating said gallium nitride photoconductive switch;
an RF pulse forming network including a coaxial transmission

Assignees

• Bae Sys Inf & Elect Sys Integ
• Bae Systems Information And Electronic Systems Integreation Inc

Inventors

• Kozyrev Alexander
• Mcgeehan John
• Morel Yannick

Classifications

• H01L31/03044 Primary

  Electricity · mapped topic

• H03K17/78

  using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled · CPC title

• Y02E10/544

  Solar cells from Group III-V materials · CPC title

• H01L31/08

  Electricity · mapped topic

• H10F30/00

  Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors · CPC title