Short circuit reduction in an electronic component comprising a stack of layers arranged on a flexible substrate

Patent metadata

Field	Value
Publication number	US-9934836-B2
Application number	US-201214128003-A
Country	US
Kind code	B2
Filing date	Jun 21, 2012
Priority date	Jun 27, 2011
Publication date	Apr 3, 2018
Grant date	Apr 3, 2018

Abstract

An electronic component ( 1 ) and an electronic device ( 100 ) comprising one or more such components ( 1 ). The electronic component ( 1 ) comprises a stack ( 4 ) of layers arranged on a flexible substrate ( 3 ). Said stack comprises an electrically active part ( 4 a ) and a protective layer ( 11 ) for protecting the electrically active part against scratches and abrasion. Said electrically active part comprises a bottom electrode layer ( 5 ) and a top electrode layer ( 9 ) and at least one insulating or semi-insulating layer ( 7 ) between said electrodes. The stack further comprises a buffer layer ( 13 ), arranged between the top electrode layer ( 9 ) and the protective layer ( 11 ). The buffer layer ( 13 ) is adapted for at least partially absorbing a lateral dimensional change (ΔL) occurring in the protective layer ( 11 ) and thus preventing said dimensional change (ΔL) from being transferred to the electrically active part ( 4 a ), thereby reducing the risk of short circuit to occur between the electrodes.

First claim

The invention claimed is:

1. An electronic component comprising a stack of layers arranged on a flexible substrate, wherein said stack comprises an electrically active part and a protective layer for protecting the electrically active part against scratches and abrasion, wherein said electrically active part comprises a bottom electrode layer, a top electrode layer comprising a top surface which faces the protective layer, and at least one insulating or semi-insulating layer between said electrodes, wherein the stack further comprises a buffer layer, arranged between the top electrode layer and the protective layer and which buffer layer extends along the entire top surface of the top electrode layer, the buffer layer being adapted to allow a lateral dimensional change in the protective layer while preventing said dimensional change from being transferred to the electrically active part, wherein the buffer layer is adapted to allow the lateral dimensional change by at least partly being of a coherent material and having such layer thickness that a lateral dimensional deformation in a top portion of the buffer layer facing the protective layer results in substantially greater lateral dimensional deformation than in a bottom portion facing the electrically active part, when said lateral dimensional deformation in the upper part is caused by the lateral dimensional change of the protective layer, the difference in lateral deformation between the top and bottom portions corresponding to an absorbed lateral dimensional change.

2. The electronic component as claimed in claim 1 , wherein the absorbed lateral dimensional change is at least 30%.

3. The electronic component as claimed in claim 1 , wherein the buffer layer comprises a material with a glass transition temperature that is lower than 30 degrees C.

4. The electronic component as claimed in claim 3 , wherein the material is a hybrid material comprising at least one material component that has a glass transition temperature that is lower than 30 degrees C.

5. The electronic component as claimed in claim 1 , wherein the buffer layer comprises a material or mix of two or more materials from any one of the following: silicon rubber, natural rubber, polypropylene glycol, polyvinyl acetate and acrylate based resins.

6. The electronic component as claimed in claim 1 , wherein the insulating or semi-insulating layer comprises an organic material.

7. The electronic component as claimed in claim 1 , wherein said lateral dimensional change of the protective layer is such causable by hardening of the protective layer, such as by curing, or by temperature differences in an operational temperature range of the electronic component, such as −10 C to +50 C.

8. The electronic component as claimed in claim 1 , wherein the electrically active part and/or the buffer layer has been printed on the flexible substrate.

9. The electronic component as claimed in claim 1 , wherein the protective layer is directly attached to the buffer layer.

10. The electronic component as claimed in claim 9 , wherein the protective layer comprises a protective film and an adhesive attaching the protective film to the buffer layer, the material that has been hardened being the adhesive.

11. The electronic component as claimed in claim 1 , wherein the protective layer is a protective film and the buffer layer forms an adhesive attaching the protective film to the rest of the stack.

Assignees

• Karlsson Christer
• Hagel Olle Jonny
• Nilsson Jakob
• Broems Per
• Thin Film Electronics Asa

Inventors

• Karlsson Christer
• Hagel Olle Jonny
• Nilsson Jakob
• Bröms Per

Classifications

• H01L51/0516

  Electricity · mapped topic

• H01L51/0575

  Electricity · mapped topic

• G11C2213/51

  Structure including a barrier layer preventing or limiting migration, diffusion of ions or charges or formation of electrolytes near an electrode · CPC title

• H01L27/285

  Electricity · mapped topic

• G11C13/0014

  comprising cells based on organic memory material · CPC title