Semiconductor light emitting element and method for producing the same

Patent metadata

Field	Value
Publication number	US-9929311-B2
Application number	US-201414777176-A
Country	US
Kind code	B2
Filing date	Jul 16, 2014
Priority date	Jul 17, 2013
Publication date	Mar 27, 2018
Grant date	Mar 27, 2018

Abstract

A semiconductor light emitting element with a design wavelength of λ, comprising a photonic crystal periodic structure having two structures with different refractive indices at each of one or more interfaces between layers that form the light emitting element. The period a and the radius R that are parameters of each of the one or more periodic structures and the design wavelength λ satisfy Bragg conditions. The ratio (R/a) between the period a and the radius R is a value determined so that a predetermined photonic band gap (PBG) for TE light becomes maximum for each periodic structure. The parameters of each periodic structure are determined so that light extraction efficiency of the entire semiconductor light emitting element with respect to light with the wavelength λ becomes maximum as a result of conducting a simulation analysis with a FDTD method using as variables the depth h of the periodic structure that is of greater than or equal to 0.5a and the period a and the radius R that are determined for each order m of the Bragg conditions.

First claim

The invention claimed is:

1. A semiconductor light emitting element with a design wavelength of λ, comprising:
a transmitted-type photonic crystal periodic structure including a plurality of pillar structures, each having a radius of R at a backside of a substrate, wherein the photonic crystal periodic structure is formed by two-types of structures, air having a refractive index n 2 , and the substrate having refractive index n 1 ,
wherein the photonic crystal periodic structure has two photonic band gaps, wherein the photonic band gaps are open for TM polarization component, and have an average refractive index n av of the two-types of structures, the average refractive index n av satisfies Bragg conditions mλ/n av =2a, wherein n av is calculated by the equation of n av =(n 2 2 +(n 1 2 −n 2 2 )(2π/√3)(R/a) 2 ) 1/2 , a is a period of the pillar structures, an order m of the Bragg conditions is 4, 0.31≤R/a≤0.36, and a depth of each of the pillar structures h≥0.5a.

Assignees

• Marubun Co Ltd
• Toshiba Machine Co Ltd
• Riken
• Aist
• Ulvac Inc
• Tokyo Ohka Kogyo Co Ltd
• National Institute Of Advanced Industrial Science & Tech

Inventors

• Kashima Yukio
• Matsuura Eriko
• Kokubo Mitsunori
• Tashiro Takaharu
• Ookawa Takafumi
• Hirayama Hideki
• Youn Sung Won
• Takagi Hideki
• Kamimura Ryuichiro
• Osada Yamato
• Shimatani Satoshi

Classifications

• G06F17/10

  Complex mathematical operations {(function generation by table look-up G06F1/03; evaluation of elementary functions by calculation G06F7/544)} · CPC title

• G06F30/20

  Design optimisation, verification or simulation (optimisation, verification or simulation of circuit designs G06F30/30) · CPC title

• H01L33/24

  Electricity · mapped topic

• H01L2933/0083

  Electricity · mapped topic

• H01L33/22 Primary

  Electricity · mapped topic