Semiconductor device

Patent metadata

Field	Value
Publication number	US-9929166-B1
Application number	US-201715442274-A
Country	US
Kind code	B1
Filing date	Feb 24, 2017
Priority date	Sep 12, 2016
Publication date	Mar 27, 2018
Grant date	Mar 27, 2018

Abstract

The semiconductor device according to the embodiments comprises: a plurality of first conductive layers arranged in a first direction above a substrate, the first direction intersecting an upper surface of the substrate; a semiconductor layer that faces a side surface of the plurality of first conductive layers and extends in the first direction as a longitudinal direction thereof; a wiring portion configured by causing end portions of the first conductive layers to be at different positions, respectively; and a transistor located above the wiring portion. The transistor comprises: a channel portion arranged at a same height as a second conductive layer, the second conductive layer being one of the plurality of the first conductive layers; agate insulating film arranged on an upper surface of the channel portion; and a gate electrode layer arranged on an upper surface of the gate insulating film.

First claim

What is claimed is:

1. A semiconductor device, comprising:
a plurality of first conductive layers arranged in a first direction above a substrate, the first direction intersecting an upper surface of the substrate;
a semiconductor layer that faces a side surface of the plurality of first conductive layers and extends in the first direction as a longitudinal direction thereof;
a wiring portion configured by causing end portions of the first conductive layers to be at different positions, respectively; and
a transistor located above the wiring portion,
the transistor comprising:
a channel portion arranged at a same height as a second conductive layer, the second conductive layer being one of the plurality of the first conductive layers;
a gate insulating film arranged on an upper surface of the channel portion; and
a gate electrode layer arranged on an upper surface of the gate insulating film.

2. The semiconductor device according to claim 1 , wherein
the channel portion has a thickness along the first direction that is approximately the same as that of the second conductive layer.

3. The semiconductor device according to claim 1 , wherein
the second conductive layer is arranged at the highest position, when seen from the substrate, among the plurality of the first conductive layers.

4. The semiconductor device according to claim 1 , wherein
the gate electrode layer and the second conductive layer include silicide of same metal.

5. The semiconductor device according to claim 1 , wherein
the channel portion is arranged so as to have a longitudinal direction thereof along a longitudinal direction of a stepwise portion of the wiring portion.

6. The semiconductor device according to claim 1 , wherein
the channel portion has a thickness along the first direction that is approximately the same as that of the second conductive layer, and
the second conductive layer is a arranged at the highest position, when seen from the substrate, among the plurality of the first conductive layers.

7. The semiconductor device according to claim 6 , wherein
the gate electrode layer and the second conductive layer include silicide of same metal.

8. The semiconductor device according to claim 6 , wherein
the channel portion is arranged so as to have a longitudinal direction thereof along a longitudinal direction of a stepwise portion of the wiring portion.

9. The semiconductor device according to claim 3 , wherein
the first conductive layers except the second conductive layer are composed of a metallic material.

10. The semiconductor device according to claim 9 , wherein
the second conductive layer is composed of a semiconductor material.

11. The semiconductor device according to claim 9 , wherein
an insulating layer is formed to surround the periphery of the first conductive layers composed of the metallic material.

12. A semiconductor device, comprising:
a plurality of first conductive layers arranged in a first direction above a substrate, the first direction intersecting an upper surface of the substrate;
a semiconductor layer that faces a side surface of the plurality of first conductive layers and extends in the first direction as a longitudinal direction thereof;
a wiring portion configured by causing end portions of the first conductive layers to be at different positions, respectively; and
a transistor located above the wiring portion,
the transistor comprises:
third and fourth conductive layers arranged at a same height as a second conductive layer, the second conductive layer being one of the plurality of the first conductive layers;
a channel portion provided between the third and fourth conductive layers and connected therebetween, the channel portion including a portion provided at a position lower than the third and fourth conductive layers seen from the substrate;
a gate insulating film arranged at least on an upper surface of the channel portion; and
a gate electrode layer arranged at least on an upper surface of the gate insulating film.

13. The semiconductor device according to claim 12 , wherein
the channel portion has a thickness along the first direction that is approximately the same as that of the second conductive layer.

14. The semiconductor device according to claim 12 , wherein
the second conductive layer is arranged at the highest position, when seen from the substrate, among the plurality of the first conductive layers.

15. The semiconductor device according to claim 12 , wherein
the gate electrode layer and the second conductive layer include silicide of same metal.

16. The semiconductor device according to claim 12 , wherein
the channel portion is arranged so as to have a longitudinal direction thereof along a longitudinal direction of a stepwise portion of the wiring portion.

17. The semiconductor device according to claim 14 , wherein
the first conductive layers except the second conductive layer are composed of a metallic material.

18. The semiconductor device according to claim 17 , wherein
The second conductive layer is composed of a semiconductor material.

19. The semiconductor device according to claim 17 , wherein
an insulating layer is formed to surround the periphery of the first conductive layers composed of the metallic material.

Assignees

• Toshiba Memory Corp

Inventors

• Sakuma Kiwamu
• Saitoh Masumi

Classifications

• H01L29/4975

  Electricity · mapped topic

• H01L27/11551

  Electricity · mapped topic

• H01L27/1157

  Electricity · mapped topic

• H01L27/11524 Primary

  Electricity · mapped topic

• H01L29/792

  Electricity · mapped topic