Semiconductor devices and methods of manufacturing
US-12166025-B2 · Dec 10, 2024 · US
US9929035B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9929035-B2 |
| Application number | US-201314654471-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 19, 2013 |
| Priority date | Dec 21, 2012 |
| Publication date | Mar 27, 2018 |
| Grant date | Mar 27, 2018 |
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Official abstract text for this publication.
A relief structure is formed on a surface of a carrier provided for accommodating a wafer, which is fastened to the carrier by a removable adhesive contacting the carrier. The relief structure, which may be spatially confined to the center of the carrier, reduces the strength of adhesion between the wafer and the carrier. If the adhesive is appropriately selected and maintains the connection between the wafer and the carrier at elevated temperatures, further process steps can be performed at temperatures of typically 300° C. or more. The subsequent mechanical separation of the adhesive joint is facilitated by the relief structure on the carrier.
Opening claim text (preview).
The invention claimed is: 1. A method of producing a removable wafer connection, comprising: providing a wafer and a carrier having a surface provided for accommodating the wafer; fastening the wafer to the carrier by a removable adhesive contacting the carrier; and providing the surface of the carrier with a relief structure, before the adhesive is brought into contact with the surface of the carrier, the relief structure reducing the strength of adhesion between the wafer and the carrier, wherein the relief structure is formed by a recess or a plurality of recesses in the surface of the carrier, wherein the relief structure comprises a further recess or a plurality of further recesses in the surface of the carrier, wherein the recess or each recess of the plurality of recesses having a larger volume than the further recess or any further recess of the plurality of further recesses, wherein the recess or each recess of the plurality of recesses has a first depth, and the further recess or each recess of the plurality of further recesses has a second depth that is different from the first depth, wherein the recess or the plurality of recesses and the further recess or the plurality of further recesses do not penetrate the carrier, and wherein only the further recess or each recess of the plurality of further recesses is completely filled with the adhesive. 2. The method according to claim 1 , wherein a margin of the surface of the carrier is kept free from the relief structure. 3. The method according to claim 1 , wherein the relief structure is formed by at least one recess that is confined in a plane of the surface of the carrier by concentric circles or spirals. 4. The method according to claim 1 , further comprising: selecting the adhesive to provide a stable connection between the wafer and the carrier at a temperature of at least 300° C. and to be removable after having been exposed to this temperature; performing at least one further process step at this temperature or reaching this temperature while the wafer is connected to the carrier; and subsequently removing the adhesive by introducing a solvent between the wafer and the carrier.
used to protect an active side of a device or wafer · CPC title
used during dicing or grinding · CPC title
the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support · CPC title
Details of chemical or physical process used for separating the auxiliary support from a device or a wafer · CPC title
using temporarily an auxiliary support · CPC title
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