Infrared detector and method of detecting one or more bands of infrared radiation

Patent metadata

Field	Value
Publication number	US-9923114-B2
Application number	US-201514955265-A
Country	US
Kind code	B2
Filing date	Dec 1, 2015
Priority date	Dec 1, 2015
Publication date	Mar 20, 2018
Grant date	Mar 20, 2018

Abstract

An infrared detector is provided. The infrared detector includes an absorption layer sensitive to radiation in only a short wavelength infrared spectral band, and a barrier layer coupled to the absorption layer. The barrier layer is fabricated from an alloy including aluminum and antimony, and at least one of gallium or arsenic, and the composition of the alloy is selected such that valence bands of the absorption layer and the barrier layer substantially align.

First claim

What is claimed is:

1. An infrared detector comprising:
an absorption layer sensitive to radiation in only a short wavelength infrared spectral band ranging between about 1 micrometer and about 2.5 micrometers; and
a barrier layer coupled to and lattice mismatched from said absorption layer, wherein said barrier layer is fabricated from an alloy comprising aluminum and antimony, and at least one of gallium or arsenic, and the composition of the alloy is selected such that valence bands of said absorption layer and said barrier layer substantially align.

2. The infrared detector in accordance with claim 1 , wherein said barrier layer comprises AlAs 0.3 Sb 0.7 .

3. The infrared detector in accordance with claim 1 , wherein said absorption layer and said barrier layer are formed from materials having a lattice parameter mismatch greater than a predetermined threshold.

4. The infrared detector in accordance with claim 3 , wherein the lattice parameter mismatch is greater than about 2.5 percent.

5. The infrared detector in accordance with claim 1 , wherein said absorption layer is fabricated from an alloy comprising indium, gallium, and arsenic.

6. The infrared detector in accordance with claim 1 , wherein said barrier layer is fabricated from a p-type semiconductor material.

7. The infrared detector in accordance with claim 6 , wherein the p-type semiconductor material of said barrier layer is doped with at least one of silicon or beryllium.

8. The infrared detector in accordance with claim 1 further comprising:
at least one buffer layer coupled on an opposing side of said absorption layer from said barrier layer; and
a substrate coupled to said at least one buffer layer.

9. An imaging system comprising:
a readout integrated circuit; and
an infrared detector electrically coupled to said readout integrated circuit, wherein said infrared detector comprises:
an absorption layer sensitive to radiation in only a short wavelength infrared spectral band ranging between about 1 micrometer and about 2.5 micrometers; and
a barrier layer coupled to and lattice mismatched from said absorption layer, wherein said barrier layer is fabricated from an alloy comprising aluminum and antimony, and at least one of gallium or arsenic, and the composition of the alloy is selected such that valence bands of said absorption layer and said barrier layer substantially align,
wherein said readout integrated circuit is configured to apply a bias voltage to said infrared detector.

10. The imaging system in accordance with claim 9 , wherein said barrier layer comprises AlAs 0.3 Sb 0.7 .

11. The imaging system in accordance with claim 9 , wherein said absorption layer and said barrier layer are formed from materials having a lattice parameter mismatch greater than a predetermined threshold.

12. The imaging system in accordance with claim 11 , wherein the lattice parameter mismatch is greater than about 1.0 percent.

13. The imaging system in accordance with claim 9 , wherein said absorption layer is fabricated from an alloy comprising indium, gallium, and arsenic.

14. The imaging system in accordance with claim 9 , wherein said barrier layer is fabricated from a p-type semiconductor material.

15. The imaging system in accordance with claim 14 , wherein the p-type semiconductor material of said barrier layer is doped with at least one of silicon or beryllium.

16. The imaging system in accordance with claim 9 further comprising:
at least one buffer layer coupled on an opposing side of said absorption layer from said barrier layer; and
a substrate coupled to said at least one buffer layer.

17. A method of detecting infrared radiation, said method comprising:
applying a bias voltage to a single-band infrared detector including an absorption layer sensitive to radiation in only a short wavelength infrared spectral band ranging between about 1 micrometer and about 2.5 micrometers, and a barrier layer coupled to and lattice mismatched from the absorption layer, wherein the barrier layer is fabricated from an alloy comprising aluminum and antimony, and at least one of gallium or arsenic, and the composition of the alloy is selected such that valence bands of the absorption layer and the barrier layer substantially align; and
receiving an electrical signal from the single-band infrared detector when the bias voltage is applied thereto, wherein the electrical signal corresponds to detection of radiation in the short wavelength infrared spectral band.

Assignees

• Boeing Co

Inventors

• De Lyon Terence J
• Terterian Sevag
• Sharifi Hasan

Classifications

• H01L31/109 Primary

  Electricity · mapped topic

• H01L27/14649

  Electricity · mapped topic

• H01L31/03046

  Electricity · mapped topic

• H01L31/03042

  Electricity · mapped topic

• H10F77/1248

  having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP · CPC title