Semiconductor device, manufacturing method thereof and imaging apparatus

US9923019B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9923019-B2
Application numberUS-201514935973-A
CountryUS
Kind codeB2
Filing dateNov 9, 2015
Priority dateNov 11, 2014
Publication dateMar 20, 2018
Grant dateMar 20, 2018

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A semiconductor device for converting incident light into an electric current includes a semiconductor substrate; an electrode embedded in the semiconductor substrate; an insulation film contacting the electrode in the semiconductor substrate; a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type and a third semiconductor region of the first conductivity type, formed sequentially in a depth direction from a side of a front face of the semiconductor substrate; and a fourth semiconductor region of the second conductivity type contacting the insulation film and the second semiconductor region. An impurity concentration of the fourth semiconductor region is greater than an impurity concentration of the second semiconductor region.

First claim

Opening claim text (preview).

What is claimed is: 1. A semiconductor device for converting incident light into an electric current, comprising: a semiconductor substrate; an electrode embedded in the semiconductor substrate; an insulation film contacting the electrode in the semiconductor substrate; a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type and a third semiconductor region of the first conductivity type, formed sequentially in a…

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What does patent US9923019B2 cover?
A semiconductor device for converting incident light into an electric current includes a semiconductor substrate; an electrode embedded in the semiconductor substrate; an insulation film contacting the electrode in the semiconductor substrate; a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type and a third semiconductor region o…
Who is the assignee on this patent?
Negoro Takaaki, Ueda Yoshinori, Sakurano Katsuyuki, and 4 more
What technology area does this patent fall under?
Primary CPC classification H01L27/14681. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Mar 20 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 9 related publications on this page (citations in our corpus or others sharing the same primary CPC).