Solid-state imaging device, manufacturing method of solid-state imaging device, and electronic device

Patent metadata

Field	Value
Publication number	US-9923010-B2
Application number	US-201715435476-A
Country	US
Kind code	B2
Filing date	Feb 17, 2017
Priority date	Mar 2, 2011
Publication date	Mar 20, 2018
Grant date	Mar 20, 2018

Abstract

The present technology relates to a solid-state imaging device, manufacturing method of a solid-state imaging device, and an electronic device, which can provide a solid-state imaging device having further improved features such as reduced optical color mixing and the like. Also, an electronic device using the solid-state imaging device thereof is provided. According to a solid-state imaging device having a substrate and multiple photoelectric converters that are formed on the substrate, an insulating film forms an embedded element separating unit. The element separating unit is configured of an insulating film having a fixed charge that is formed so as to coat the inner wall face of a groove portion, within the groove portion which is formed in the depth direction from the light input side of the substrate.

First claim

What is claimed is:

1. A solid-state imaging device comprising:
a semiconductor substrate including a first side that is a light-incident side and a second side opposite to the first side;
a first photoelectric converter in the semiconductor substrate;
a second photoelectric converter disposed adjacent to the first photoelectric converter in the semiconductor substrate;
a third photoelectric converter disposed adjacent to the second photoelectric converter in the semiconductor substrate;
a first groove portion disposed between the first and second photoelectric converters, wherein the first groove portion extends in a depth direction in the semiconductor substrate, wherein the first groove portion includes a first portion of a first insulating film having a fixed charge and a first portion of a second insulating film, and wherein a first hollow portion disposed within the second insulating film is located above the first groove portion; and
a second groove portion disposed between the second and third photoelectric converters, wherein the second groove portion extends in the depth direction in the semiconductor substrate, wherein the second groove portion includes a second portion of the first insulating film and a second portion of the second insulating film, and wherein a second hollow portion disposed within the second insulating film is located above the second groove portion,
wherein,
a third portion of the first insulating film is disposed along the semiconductor substrate between the first groove portion and the second groove portion, and
a portion of the first hollow portion and a portion of the second hollow portion are located above an interface between the first side of the semiconductor substrate and the third portion of the first insulating film.

2. The solid-state imaging device according to claim 1 , wherein the second insulating film includes silicon oxide, silicon nitride, or silicon oxynitride.

3. The solid-state imaging device according to claim 1 , wherein the first insulating film includes an oxide or nitride material including at least one of the elements of hafnium (Hf), aluminum (Al), zirconium (Zr), tantalum (Ta), titanium (Ti), Lanthanum (La), Praseodymium (Pr), Cerium (Ce), Neodymium (Nd), Promethium (Pm), Samarium (Sm), Europium (Eu), Gadolinium (Gd), Terbium (Tb), Dysprosium (Dy), Holmium (Ho), Thulium (Tm), Ytterbium (Yb), Lutetium (Lu), or Yttrium (Y).

4. The solid-state imaging device according to claim 1 , wherein the first insulating film includes a hafnium oxide film or a tantalum oxide film.

5. The solid-state imaging device according to claim 1 , wherein the second insulating film includes a silicon oxide film.

6. The solid-state imaging device according to claim 1 , wherein the second insulating film is configured to close off the first groove portion.

7. The solid-state imaging device according to claim 1 , wherein a wiring layer is disposed at the second side of the semiconductor substrate.

8. The solid-state imaging device according to claim 7 , further including a light-blocking film disposed at the first side of the semiconductor substrate.

9. The solid-state imaging device according to claim 8 , further comprising:
a planarizing film disposed above the light-blocking film.

10. The solid-state imaging device according to claim 8 , further comprising:
a color filter disposed above the light-blocking film.

11. The solid-state imaging device according to claim 10 , further comprising:
an on-chip lens disposed above the color filter.

12. The solid-state imaging device according to claim 7 , wherein the first groove portion is formed at a depth that reaches a well layer formed on the second side of the semiconductor substrate.

13. The solid-state imaging device according to claim 1 , wherein the first groove portion is formed at a depth that reaches a well layer formed on a front side of the semiconductor substrate.

14. The solid-state imaging device according to claim 1 , further comprising:
a floating diffusion unit, wherein the first photoelectric converter is coupled to the floating diffusion unit, and wherein the floating diffusion unit is coupled to a reset transistor and amplification transistor.

15. The solid-state imaging device according to claim 14 , wherein the floating diffusion unit, the amplification transistor, and the reset transistor are shared by the first and second photoelectric converters.

16. The solid-state imaging device according to claim 14 , further comprising:
a selecting transistor coupled to the amplification transistor.

17. The solid-state imaging device according to claim 16 , further comprising:
a signal line coupled to the selecting transistor.

18. The solid-state imaging device according to claim 17 , further comprising:
a transfer transistor coupled to the first photoelectric converter, wherein the transfer transistor includes a transfer gate electrode disposed between the first photoelectric converter and the floating diffusion unit.

19. The solid-state imaging device according to claim 18 , wherein the transfer gate electrode is disposed between the first photoelectric converter and the floating diffusion unit in a diagonal direction.

20. The solid-state imaging device according to claim 1 , further comprising:
a third film provided between the first insulating film and side faces of the first groove portion.

21. The solid-state imaging device according to claim 20 , wherein the second insulating film includes silicon oxide.

22. The solid-state imaging device according to claim 1 , wherein the first and second groove portions partially surround the second photoelectric converter.

23. The solid-state imaging device according to claim 1 , further comprising:
a light-blocking film disposed above at least a portion of the first groove portion.

24. The solid-state imaging device according to claim 1 , further comprising:
a floating diffusion unit, wherein the first groove portion is disposed above the floating diffusion unit.

25. The solid-state imaging device according to claim 1 , wherein a refractive index of the first insulating film is greater than a refractive index of the first hollow portion.

26. The solid-state imaging device according to claim 1 , wherein a refractive index of the second insulating film is greater than a refractive index of the first hollow portion.

27. The solid-state imaging device according to claim 1 , wherein the first hollow portion is in a vacuum state.

28. The solid-state imaging device according to claim 1 , wherein the second insulating film extends from the first groove portion to the second groove portion along a surface of the first insulating film, coating and directly contacting the first insulating film between the first groove portion and the second groove portion.

29. An apparatus comprising:
a solid-state imaging device including:
a semiconductor substrate including a first side that is a light-incident side and a second side opposite to the first side,
a first photoelectric converter in the semiconductor substrate,
a second photoelectric converter disposed adjacent to the first photoelectric converter in the semiconductor substrate,
a third photoelectric converter disposed adjacent to the second photoelectric converter in the semiconductor substrate,
a first groove portion disposed b

Assignees

• Sony Corp

Inventors

• Yanagita Takeshi
• Oshiyama Itaru
• Enomoto Takayuki
• Ikeda Harumi
• Izawa Shinichiro
• Yamamoto Atsuhiko
• Ota Kazunobu

Classifications

• H01L27/14636

  Electricity · mapped topic

• H01L27/14643

  Electricity · mapped topic

• H01L27/1463 Primary

  Electricity · mapped topic

• H01L27/14623

  Electricity · mapped topic

• H01L27/14627

  Electricity · mapped topic