Sputtering target and method for production thereof

Patent metadata

Field	Value
Publication number	US-9922807-B2
Application number	US-201414896522-A
Country	US
Kind code	B2
Filing date	Mar 27, 2014
Priority date	Jul 8, 2013
Publication date	Mar 20, 2018
Grant date	Mar 20, 2018

Abstract

A sputtering target according to the disclosure includes 5 wtppm to 10,000 wtppm of Cu and the balance of In and has a relative density of 99% or more and an average grain size of 3,000 μm or less.

First claim

The invention claimed is:

1. A sputtering target comprising:
5 wtppm to 10,000 wtppm of Cu; and
the balance of In,
the sputtering target having a relative density of at least 99%, an average grain size of at most 3,000 μm and an oxygen concentration of at most 20 wtppm.

2. The sputtering target according to claim 1 , wherein the average grain size is from 10 μm to 1,000 μm.

3. The sputtering target according to claim 2 , wherein the average grain size is from 10 μm to 500 μm.

4. The sputtering target according to claim 3 , wherein the average grain size is from 10 μm to 300 μm.

5. The sputtering target according to claim 1 , further comprising at most 100 wtppm of at least one selected from S, Cd, Zn, Se, Mg, Ca, and Sn.

6. The sputtering target according to claim 1 , which has a cylindrical shape.

7. A method for producing the sputtering target according to claim 1 , the method comprising:
forming a sputtering target raw material in such a manner that the sputtering target raw material is bonded to a surface of a supporting substrate, wherein the sputtering target raw material comprises 5 wtppm to 10,000 wtppm of Cu and the balance of In; and
then subjecting the sputtering target raw material to plastic working in a thickness direction of the sputtering target raw material at a thickness reduction rate in the range of 10% to 80%.

8. The method for producing a sputtering target according to claim 7 , wherein the sputtering target raw material further comprises at most 100 wtppm, in total, of at least one selected from S, Cd, Zn, Se, Mg, Ca, and Sn.

9. The method for producing a sputtering target according to claim 7 , wherein the supporting substrate is a cylindrical backing tube on which a cylindrical sputtering target is produced.

10. The method for producing a sputtering target according to claim 7 , wherein the sputtering target raw material is formed by casting a molten metal.

11. The method for producing a sputtering target according to claim 10 , wherein the molten metal is stirred or agitated during the casting.

12. The method for producing a sputtering target according to claim 10 , wherein the casting is performed under a nitrogen or Ar atmosphere.

Assignees

• Jx Nippon Mining & Metals Corp

Inventors

• Endo Yousuke

Classifications

• B22D21/00

  Casting non-ferrous metals or metallic compounds so far as their metallurgical properties are of importance for the casting procedure; Selection of compositions therefor {(non-ferrous ingots B22D7/005)} · CPC title

• C22F1/16

  of other metals or alloys based thereon · CPC title

• B22D27/08

  Shaking, vibrating, or turning of moulds · CPC title

• C23C14/14

  Metallic material, boron or silicon · CPC title

• C22C28/00

  Alloys based on a metal not provided for in groups C22C5/00 - C22C27/00 · CPC title