Mask blank and mask and fabrication method thereof

Patent metadata

Field	Value
Publication number	US-9921467-B2
Application number	US-201514954602-A
Country	US
Kind code	B2
Filing date	Nov 30, 2015
Priority date	Nov 30, 2015
Publication date	Mar 20, 2018
Grant date	Mar 20, 2018

Abstract

A mask blank and a mask are provided. The mask blank includes a substrate, and an etching stop layer embedded in the substrate. The mask includes the mask blank with the embedded etching stop layer, and a plurality of recesses formed in the mask blank. The recess exposes the embedded etching stop layer.

First claim

What is claimed is:

1. A mask, comprising:
a substrate comprising a plurality of protruding portions, wherein each of the plurality of protruding portions includes an upper surface;
an etching stop layer embedded in the substrate;
a plurality of recesses in the substrate, wherein the recesses are located in a central region of the mask, and separated by the protruding portions of the substrate; and
an overlying layer over the substrate in a peripheral region of the mask, wherein the overlying layer comprises a stack of a hard mask layer and a shift layer, and the upper surface of each of the protruding portions of the substrate is exposed from the hard mask layer and the shift layer.

2. The mask of claim 1 , wherein the recesses partially expose a surface of the etching stop layer.

3. The mask of claim 1 , wherein the etching stop layer has a plurality of openings connecting the recesses, respectively.

4. The mask of claim 1 , wherein the etching stop layer is optically compatible with the substrate.

5. The mask of claim 4 , wherein an index of refraction of the etching stop layer is substantially equal to that of the substrate.

6. The mask of claim 1 , wherein the etching stop layer is physically compatible with the substrate.

7. The mask of claim 6 , wherein a coefficient of thermal expansion of the etching stop layer is substantially equal to that of the substrate.

8. The mask of claim 1 , wherein the overlying layer further comprises another hard mask layer over the shift layer, and the upper surface of each of the protruding portions is exposed from the another hard mask layer.

9. A method for manufacturing a mask, comprising:
receiving a mask blank comprising a substrate, an etching stop layer embedded in the substrate, and a first hard mask layer over the substrate;
patterning the first hard mask layer to form a patterned first hard mask layer, wherein the patterned first hard mask layer comprises a first portion over a peripheral region of the substrate, and a plurality of second portions over a central region of the substrate;
forming a plurality of recesses in the substrate exposed from the second portions of the patterned first hard mask layer; and
removing each of the second portions of the patterned first hard mask layer from the substrate, and remaining the first portion of the pattern first hard mask layer over the substrate.

10. The method of claim 9 , wherein the mask blank comprises:
a first plate;
a second plate bonded to the first plate; and
the etching stop layer sandwiched between the first plate and the second plate.

11. The method of claim 9 , wherein the mask blank further comprises:
a sacrificial layer over the first hard mask layer; and
a second hard mask layer over the sacrificial layer.

12. The method of claim 11 , further comprising:
patterning the second hard mask layer, and using the second hard mask layer as a hard mask to pattern the sacrificial layer to partially expose the first hard mask layer;
blocking a portion of the patterned second hard mask layer, and removing the unblocked portion of the patterned second hard mask layer and the first hard mask layer exposed by the sacrificial layer; and
removing the sacrificial layer exposed by the patterned second hard mask to reveal the patterned first hard mask layer.

13. A mask, comprising:
a substrate comprising a plurality of protruding portions, wherein each of the plurality of protruding portions includes an upper surface;
an etching stop layer embedded in the substrate;
a plurality of recesses in the substrate, wherein the recesses are located in a central region of the mask, and separated by the protruding portions of the substrate; and
an overlying layer over the substrate in a peripheral region of the mask, wherein the overlying layer comprises a first hard mask layer, a shift layer over the first hard mask layer and a second hard mask layer over the shift layer, and the upper surface of each of the protruding portions is exposed from the first hard mask layer, the shift layer and the second hard mask layer.

14. The mask of claim 13 , wherein the recesses partially expose a surface of the etching stop layer.

15. The mask of claim 13 , wherein the etching stop layer has a plurality of openings connecting the recesses, respectively.

16. The mask of claim 13 , wherein the etching stop layer is optically compatible with the substrate.

17. The mask of claim 16 , wherein an index of refraction of the etching stop layer is substantially equal to that of the substrate.

18. The mask of claim 13 , wherein the etching stop layer is physically compatible with the substrate.

19. The mask of claim 18 , wherein a coefficient of thermal expansion of the etching stop layer is substantially equal to that of the substrate.

20. The mask of claim 13 , further comprising a pellicle mounted on the overlying layer.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Tu Chih-Chiang
• Chen Chun-Lang

Classifications

• H10P76/4088

  Processes for improving the resolution of the masks · CPC title

• H10P76/4085

  characterised by the processes involved to create the masks · CPC title

• H10P76/405

  characterised by their composition, e.g. multilayer masks · CPC title

• G03F1/60

  Substrates · CPC title

• G03F1/80

  Etching · CPC title