Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device

Patent metadata

Field	Value
Publication number	US-9917004-B2
Application number	US-201314419315-A
Country	US
Kind code	B2
Filing date	Sep 4, 2013
Priority date	Oct 12, 2012
Publication date	Mar 13, 2018
Grant date	Mar 13, 2018

Abstract

Provided are a group III nitride composite substrate having a low sheet resistance and produced with a high yield, and a method for manufacturing the same, as well as a method for manufacturing a group III nitride semiconductor device using the group III nitride composite substrate. A group III nitride composite substrate includes a group III nitride film and a support substrate formed from a material different in chemical composition from the group III nitride film. The group III nitride film is joined to the support substrate in one of a direct manner and an indirect manner. The group III nitride film has a thickness of 10 μm or more. A sheet resistance of a group III-nitride-film-side main surface is 200 Ω/sq or less.

First claim

The invention claimed is:

1. A group III nitride composite substrate comprising a group III nitride film and a support substrate formed from a material different in chemical composition from said group III nitride film,
said group III nitride film being joined to said support substrate in one of a direct manner and an indirect manner with a joint film interposed therebetween,
said group III nitride composite substrate having a joint interface which is one of an interface formed by a main surface of said group III nitride film and a main surface of said support substrate, an interface formed between main surfaces of inner joint films in said joint film, an interface formed by a main surface of said joint film and a main surface of said group III nitride film, and an interface by a main surface of said joint film and a main surface of said support substrate,
said group III nitride film having a thickness of 10 μm or more,
a sheet resistance of a group III-nitride-film-side main surface of said group III nitride composite substrate being 200 Ω/sq or less, and
said joint interface including a joined region where said group III nitride film and said support substrate are joined to each other in either said direct manner or said indirect manner, and a non-joined region where said group III nitride film and said support substrate are not joined to each other in either said direct manner or said indirect manner, wherein
an area of said joined region joining said group III nitride film and said support substrate is 70% or more relative to an area of the main surface, and
said non-joined region failing to join said group III nitride film and said support substrate includes at least one non-joined partial region, and said non-joined partial region is a small non-joined partial region having a maximum size in radial direction of less than 20 mm.

2. The group III nitride composite substrate according to claim 1 , wherein said non-joined region failing to join said group III nitride film and said support substrate includes at least one non-joined partial region, and said non-joined partial region is an inner non-joined partial region failing to abut on a perimeter of the main surface.

3. The group III nitride composite substrate according to claim 1 , wherein said group III nitride film has a main-surface through hole, and an area of said main-surface through hole is 10% or less relative to an area of the main surface.

4. The group III nitride composite substrate according to claim 1 , wherein said joint interface between said group III nitride film and said support substrate includes an impurity containing metal, and the concentration of said impurity is 1×10 10 cm −2 or more.

5. The group III nitride composite substrate according to claim 1 , wherein said group III nitride film has a thermal expansion coefficient of more than 0.7 times and less than 1.4 times as large as a thermal expansion coefficient of said support substrate.

6. The group III nitride composite substrate according to claim 1 , wherein said support substrate has a fracture toughness of 1 MNm −2/3 or more, and said support substrate has a thickness of 50 μm or more.

7. The group III nitride composite substrate according to claim 1 , wherein said indirect manner is a manner of interposing a joint film between said group III nitride film and said support substrate.

8. A method for manufacturing a group III nitride composite substrate as recited in claim 1 , comprising the steps of: bonding said group III nitride film and said support substrate to each other in one of a direct manner and an indirect manner; and reducing the thickness of at least one of said group III nitride film and said support substrate bonded to each other.

9. A method for manufacturing a group III nitride semiconductor device using a group III nitride composite substrate as recited in claim 1 , comprising the steps of: preparing said group III nitride composite substrate; and growing at least one group III nitride layer on the group III-nitride-film-side main surface of said group III nitride composite substrate.

Assignees

• Sumitomo Electric Industries

Inventors

• Ishibashi Keiji
• Hachigo Akihiro
• Hiromura Yuki
• Matsumoto Naoki
• Nakahata Seiji
• Nakanishi Fumitake
• Yanagisawa Takuya
• Uematsu Koji
• Seki Yuki
• Yamamoto Yoshiyuki
• Yoshizumi Yusuke
• Mikami Hidenori

Classifications

• H10P90/1916 Primary

  with separation or delamination along an ion implanted layer, e.g. Smart-cut · CPC title

• H10P90/129

  by polishing · CPC title

• H10P72/7424

  used as a support during the manufacture of self-supporting substrates · CPC title

• H10P72/744

  Details of chemical or physical process used for separating the auxiliary support from a device or a wafer · CPC title

• H10P72/74

  using temporarily an auxiliary support · CPC title