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Group III nitride composite substrate and method for manufacturing the same, laminated group III nitride composite substrate, and group III nitride semiconductor device and method for manufacturing the same
US9136337B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9136337-B2 |
| Application number | US-201314030009-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 18, 2013 |
| Priority date | Oct 12, 2012 |
| Publication date | Sep 15, 2015 |
| Grant date | Sep 15, 2015 |
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Abstract
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A group III nitride composite substrate includes a support substrate and a group III nitride film. A ratio s t /m t of a standard deviation s t of the thickness of the group III nitride film, to a mean value m t of the thickness thereof is 0.001 or more and 0.2 or less, and a ratio s o /m o of a standard deviation s o of an absolute value of an off angle between a main surface of the group III nitride film and a plane of a predetermined plane orientation, to a mean value m o of the absolute value of the off angle thereof is 0.005 or more and 0.6 or less. Accordingly, there is provided a low-cost and large-diameter group III nitride composite substrate including a group III nitride film having a large thickness, a small thickness variation, and a high crystal quality.
First claim
Opening claim text (preview).
What is claimed is: 1. A group III nitride composite substrate with a diameter of 75 mm or more including a support substrate and a group III nitride film having a thickness of 10 μm or more and 250 μm or less that are bonded to each other, a ratio s t /m t of a standard deviation s t of the thickness of said group III nitride film, to a mean value m t of the thickness thereof being 0.001 or more and 0.2 or less, and a ratio s o /m o of a standard deviation s o of an absolute…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H10D62/8503Primary
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US9136337B2 cover?
- A group III nitride composite substrate includes a support substrate and a group III nitride film. A ratio s t /m t of a standard deviation s t of the thickness of the group III nitride film, to a mean value m t of the thickness thereof is 0.001 or more and 0.2 or less, and a ratio s o /m o of a standard deviation s o of an absolute value of an off angle between a main surface of the group…
- Who is the assignee on this patent?
- Sumitomo Electric Industries
- What technology area does this patent fall under?
- Primary CPC classification H10D62/8503. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Sep 15 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).