EUV mirror and optical system comprising EUV mirror

Patent metadata

Field	Value
Publication number	US-9915876-B2
Application number	US-201514796612-A
Country	US
Kind code	B2
Filing date	Jul 10, 2015
Priority date	Jan 11, 2013
Publication date	Mar 13, 2018
Grant date	Mar 13, 2018

Abstract

An EUV mirror with a substrate and a multilayer arrangement including: a periodic first layer group having N 1 >1 first layer pairs of period thickness P 1 and arranged on a radiation entrance side of the multilayer arrangement; a periodic second layer group having N 2 >1 second layer pairs of period thickness P 2 and arranged between the first layer group and the substrate; and a third layer group having N 3 third layer pairs arranged between the first and second layer groups. N 1 >N 2 . The third layer group has a third period thickness P 3 which deviates from an average period thickness P M =(P 1 +P 2 )/2 by a period thickness difference ΔP. ΔP corresponds to the quotient of the optical layer thickness (λ/4) of a quarter-wave layer and the product of N 3 and cos(AOI M ), AOI M being the mean incidence angle for which the multilayer arrangement is designed.

First claim

What is claimed is:

1. A mirror for extreme ultraviolet light (EUV mirror) comprising:
a substrate and a multilayer arrangement applied on the substrate, which multilayer arrangement reflects radiation having an extreme ultraviolet (EUV) wavelength λ and comprises a plurality of layer pairs having layers that alternate between first layers and second layers, wherein the first layers and the second layers comprise respective materials having mutually differing indices of refraction,
wherein the multilayer arrangement has:
a periodic first layer group (LG 1 ) having a first number N 1 >1 of first layer pairs, which are arranged on a radiation entrance side of the multilayer arrangement and have a first period thickness P 1 ;
a periodic second layer group (LG 2 ) having a second number N 2 >1 of second layer pairs, which are arranged between the first layer group and the substrate and have a second period thickness P 2 ; and
a third layer group (LG 3 ) having a third number N 3 of third layer pairs, which are arranged between the first layer group and the second layer group,
wherein the first number N 1 is greater than the second number N 2 ; and
wherein the third layer group has a third period thickness P 3 which deviates from an average period thickness P M =(P 1 +P 2 )/2 by a period thickness difference ΔP, wherein the period thickness difference ΔP substantially corresponds to the quotient of the optical layer thickness (λ/4) of a quarter-wave layer and the product of the third number N 3 and cos(AOI M ), wherein AOI M is the mean angle of incidence for the multilayer arrangement, wherein ΔP=x*(λ/(N 3 cos(AOI M ))) for the period thickness difference ΔP and wherein 0.2≦x≦0.35;
said EUV mirror further comprising:

a fourth layer group (LG 4 ), which has a fourth number N 4 of fourth layer pairs and a fourth period thickness P 4 which deviates from the mean period thickness P M by a further period thickness difference ΔP, wherein the further period thickness difference ΔP substantially corresponds to the quotient of the optical layer thickness (λ/4) of a quarter-wave layer and the product of the fourth number N 4 and cos(AOI M ), wherein the fourth layer group is arranged between the third layer group and the substrate and at least one second layer pair of the second layer group is arranged between the third layer group and the fourth layer group.

2. The EUV mirror according to claim 1 , wherein the third layer group has no individual layer whose layer thickness is greater than or equal to λ/(2*cos(AOI M )).

3. The EUV mirror according to claim 2 , wherein a maximum value of an individual layer thickness of the third layer group is less than 0.9*λ/(2*cos(AOI M )).

4. The EUV mirror according to claim 1 , wherein 0.25≦x≦0.35.

5. The EUV mirror according to claim 1 , wherein 2≦N 3 ≦5.

6. The EUV mirror according to claim 1 , wherein the third layer group has two or more layer pairs and has a periodic layer construction having substantially identical third period thicknesses.

7. The EUV mirror according to claim 6 , wherein the third layer group has a strictly periodic layer construction.

8. The EUV mirror according to claim 1 , wherein the third period thickness of the third layer group (LG 3 ) is less than the first period thickness and/or the second period thickness by the period thickness difference ΔP, or wherein the third period thickness of the third layer group is greater than the first period thickness and/or the second period thickness by the period thickness difference ΔP.

9. The EUV mirror according to claim 1 , wherein 2≦N 4 ≦5.

10. The EUV mirror according to claim 1 , wherein the fourth layer group (LG 4 ) has two or more layer pairs and has a periodic layer construction having substantially identical fourth period thicknesses.

11. The EUV mirror according to claim 10 , wherein the fourth layer group has a strictly periodic layer construction.

12. The EUV mirror according to claim 1 , wherein the first layer group (LG 1 ) is strictly periodic and/or wherein the second layer group (LG 2 ) is strictly periodic.

13. The EUV mirror according to claim 1 , wherein the first period thickness P 1 is equal to the second period thickness P 2 .

14. The EUV mirror according to claim 1 , wherein N 1 >10.

15. The EUV mirror according to claim 14 , wherein N 1 >15.

16. The EUV mirror according to claim 1 , wherein a layer thickness of the first layers and of the second layers in all layer pairs of the first, second and third layer groups is identical.

17. The EUV mirror according to claim 1 , wherein one of the layer materials of the layer pairs in all layer groups has the same layer thickness.

18. The EUV mirror according to claim 1 , wherein the layer groups comprise differingly absorbent layer materials, and wherein a ratio Γ between a layer thickness of the more highly absorbent layer material and the period thickness of the layer pairs within at least one of the layer groups varies.

19. The EUV mirror according to claim 18 , wherein the value of Γ varies continuously within a layer group.

20. The EUV mirror according to claim 18 , wherein the value of Γ increases or decreases from layer pair to layer pair from the substrate side of a layer group to that side of the layer group which lies nearer to the radiation entrance side.

21. An optical system comprising at least one EUV mirror according to claim 1 .

22. An optical system according to claim 21 , wherein the optical system is a projection lens or an illumination system for a microlithographic projection exposure apparatus.

Assignees

• Zeiss Carl Smt Gmbh

Inventors

• Schicketanz Thomas
• Paul Hans-Jochen
• Zaczek Christoph

Classifications

• B82Y10/00

  Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic · CPC title

• G03F7/702

  Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems · CPC title

• G21K2201/067

  Construction details · CPC title

• G21K1/067

  using surface reflection, e.g. grazing incidence mirrors, gratings (multilayer mirrors G21K1/062) · CPC title

• G03F7/70958

  Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties · CPC title