Wafer inspection

Patent metadata

Field	Value
Publication number	US-9915622-B2
Application number	US-201514838194-A
Country	US
Kind code	B2
Filing date	Aug 27, 2015
Priority date	Jul 12, 2011
Publication date	Mar 13, 2018
Grant date	Mar 13, 2018

Abstract

Systems configured to inspect a wafer are provided. One system includes an illumination subsystem configured to direct pulses of light to an area on a wafer; a scanning subsystem configured to scan the pulses of light across the wafer; a collection subsystem configured to image pulses of light scattered from the area on the wafer to a sensor, wherein the sensor is configured to integrate a number of the pulses of scattered light that is fewer than a number of the pulses of scattered light that can be imaged on the entire area of the sensor, and wherein the sensor is configured to generate output responsive to the integrated pulses of scattered light; and a computer subsystem configured to detect defects on the wafer using the output generated by the sensor.

First claim

What is claimed is:

1. A system configured to inspect a wafer, comprising:
an illumination subsystem configured to direct pulses of light to an area on a wafer;
a scanning subsystem configured to scan the pulses of light across the wafer;
a collection subsystem configured to image pulses of light scattered from the area on the wafer to a sensor, wherein the sensor is configured to integrate a number of the pulses of scattered light that is fewer than a number of the pulses of scattered light that can be imaged on the entire area of the sensor, and wherein the sensor is configured to generate output responsive to the integrated pulses of scattered light;
a micro-electro-mechanical system-based optical switching device positioned between the collection subsystem and the sensor;
at east one additional sensor, wherein the optical switching device is configured to direct a first of the pulses of scattered light generated by a first of the pulses of light to the sensor and a second of the pulses of scattered light generated by a second of the pulses of light, subsequent to the first of the pulses of light to the at least one additional sensor; and
a computer subsystem configured to detect defects on the wafer using the output generated by the sensor.

2. The system of claim 1 , wherein the scanning subsystem is further configured to scan the pulses of light across the wafer by rotating and translating the wafer simultaneously, and wherein the sensor comprises a rectangular array of pixels.

3. The system of claim 1 , wherein the number of the pulses integrated by the sensor is one pulse of the scattered light, and wherein the sensor integrates for the duration of the one pulse of the scattered light and then transfers any charge responsive to the one pulse of the scattered light off of the sensor.

4. The system of claim 1 , wherein the collection subsystem comprises one or more anamorphic optical elements configured to image all of the scattered light in the first of the pulses of scattered light to only one pixel of the sensor.

5. The system of claim 1 , wherein the sensor integrates unidirectionally for the duration of the first of the pulses of the scattered light and then bidirectionally transfers any charge responsive to the first of the pulses of the scattered light off of the sensor.

6. The system of claim 1 , wherein the sensor comprises an image intensifier and an area sensor, and wherein the sensor integrates for the duration of the first of the pulses of the scattered light and until all phosphor energy of the image intensifier corresponding to the first of the pulses of the scattered light has completely decayed.

7. The system of claim 1 , further comprising an optical element configured to separate the pulses of the scattered light collected in different segments of a collection numerical aperture of the collection subsystem, wherein the sensor is further configured to detect one of the different segments, and wherein the system further comprises another additional sensor configured to detect another of the different segments.

8. The system of claim 7 , wherein the system is further configured to alter or replace the optical element depending on the one of the different segments that is to be detected by the sensor and the other of the different segments that is to be detected by the other additional sensor.

9. The system of claim 1 , further comprising an optical element configured to separate the pulses of the scattered light collected in different segments of a collection numerical aperture of the collection subsystem, wherein the sensor is further configured to detect one of the different segments using one portion of the sensor and to detect another of the different segments using a different portion of the sensor, and wherein the one portion and the other portion of the sensor do not overlap with each other and are not contiguous on the sensor.

10. The system of claim 1 , wherein the collection subsystem comprises a scattered light collector having a resolution that is not fully diffraction-limited.

11. The system of claim 1 , further comprising another additional sensor that includes an image intensifier, wherein the collection subsystem is further configured to image the pulses of light scattered from the area on the wafer to the other additional sensor, wherein the other additional sensor generates additional output responsive to the pulses of scattered light, and wherein the computer subsystem is further configured to detect the defects on the wafer using the additional output instead of the output when sensor electronic noise dominates total channel noise in the sensor.

12. The system of claim 1 , further comprising another additional sensor that is configured for photon counting, wherein the collection subsystem is further configured to image the pulses of light scattered from the area on the wafer to the other additional sensor, wherein the other additional sensor generates additional output responsive to the pulses of scattered light, and wherein the computer subsystem is further configured to detect the defects on the wafer using the additional output.

13. The system of claim 1 , wherein the illumination subsystem comprises a frequency conversion laser, and wherein the pulses of light directed to the area on the wafer do not vary spatially over the duration of the pulses of light and have substantially constant intensity over the duration of the pulses of light.

14. The system of claim 13 , wherein the illumination subsystem further comprises a beam shaping optical element coupled to the laser.

15. The system of claim 1 , wherein the illumination subsystem comprises a frequency conversion laser, and wherein the pulses of light directed to the area on the wafer have substantially constant intensity over the duration of the pulses of light.

16. The system of claim 1 , wherein the optical switching device is further configured to separate the pulses of scattered light collected in different segments of a collection numerical aperture of the collection subsystem, and wherein the optical switching device is further configured to direct only one of the different segments of the scattered light generated by the first of the pulses of light to the sensor and then to direct only another one of the different segments of the scattered light generated by the second of the pulses of light, subsequent to the first pulse of light, to the sensor.

17. The system of claim 1 , wherein the sensor is synchronized in time relative to the pulses of light to detect only the pulses of scattered light with predetermined arrival times.

18. The system of claim 17 , wherein the pulses of the scattered light with the predetermined arrival times comprise fluorescence or photoluminescence.

19. The system of claim 1 , wherein the scanning subsystem is further configured to scan the pulses of light across the wafer by rotating the wafer, and wherein when the pulses of light are being scanned across a center region of the wafer, the illumination subsystem is further configured to direct the pulses of light to the area on the wafer less often than when the pulses of light are being scanned across the wafer outside of the center region.

20. The system of claim 1 , wherein the scanning subsystem is further configured to scan the pulses of light across the wafer by rotating and translating the wafer, wherein the sensor comprises an area sensor, wherein when the pulses of light are being scanned across a center region of the wafer, the scanning subsy

Assignees

• Kla Tencor Corp

Inventors

• Romanovsky Anatoly
• Maleev Ivan
• Kavaldjiev Daniel
• Yuditsky Yury
• Woll Dirk
• Biellak Stephen
• Vaez-Iravani Mehdi
• Zhao Guoheng

Classifications

• G01N21/9501 Primary

  Semiconductor wafers (manufacturing processes per se of semiconductor devices implementing a measuring step H10P74/20) · CPC title

• G01N21/47

  Scattering, i.e. diffuse reflection (G01N21/25, G01N21/41 take precedence {G01N21/55 takes precedence}) · CPC title

• G01N21/8851

  Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges (G01N21/8806 and G01N21/93 - G01N21/95692 take precedence; optical measurement of dimensions G01B11/00; optical scanning G02B26/10; image transformation G06T3/00; computerised image enhancement G06T5/00; image processing per se for flaw detection G06T7/0002) · CPC title

• G01N21/956

  Inspecting patterns on the surface of objects {(contactless testing of electronic circuits G01R31/308; testing currency G07D; manufacturing processes per se of semiconductor devices implementing a measuring step H10P74/20)} · CPC title

• G01N21/8806

  Specially adapted optical and illumination features · CPC title