Broadband tunable external-cavity laser using small MEMS mirror

Patent metadata

Field	Value
Publication number	US-9912120-B2
Application number	US-201315106580-A
Country	US
Kind code	B2
Filing date	Dec 25, 2013
Priority date	Dec 20, 2013
Publication date	Mar 6, 2018
Grant date	Mar 6, 2018

Abstract

A Raman pump laser control apparatus comprises a wavelength division multiplexer, a tap coupler, a photoelectric detector, an analog amplification processing circuit, an analog-to-digital converter, a fast Raman pump control unit, an digital-analog converter, and a Raman pump laser. The fast Raman pump control unit, after having known anticipated output light power of the Raman pump laser, based on a direct relationship between a current anticipated output light power of the Raman pump laser and input digital quantity that is needed by the digital-analog converter, uses a feedforward control mechanism so that actual output light power of the Raman pump laser fastly approximates the anticipated output light power thereof, and then synchronously combines with a feedback control mechanism so that the actual output light power of the Raman pump laser is precisely locked on the anticipated output light power, thereby achieving fast and precise control of the Raman pump laser.

First claim

The invention claimed is:

1. A broadband tunable external-cavity laser creating an output laser beam with small MEMS mirror, comprising a MEMS reflecting mirror, then a convergent lens, then a grating, then a temperature-phase compensator, then a grid filter, then a first beam collimating lens, then a semiconductor optical gain device, then a second beam collimating lens, then an optical isolator, and then a beam splitter arranged sequentially,
wherein, the semiconductor optical gain device, the first beam collimating lens, the MEMS reflecting mirror and the grating constitute resonant cavity of the broadband tunable external-cavity laser, which further comprises a driving controller, which is connected with the MEMS reflecting mirror and the semiconductor optical gain device,
wherein, the semiconductor optical gain device is for providing gain of the broadband tunable external-cavity laser, and producing broadband multi-channel light beam,
the first and the second beam collimating lens are for forming the collimating multi-wavelength beams inside the resonant cavity and on output side of the broadband tunable external-cavity laser respectively,
the optical isolator is for transmitting collimating multi-wavelength light beam on the output side to the beam splitter providing the output laser beam and isolating echo,
the grating is for dividing the collimating multi-wavelength light beam inside the resonant cavity into light beams with different dispersion angles per wavelengths,
the driving controller is for adjusting the gain of the semiconductor optical gain device and providing driving signal for the MEMS reflecting mirror,
wherein the convergent lens is arranged sequentially between the MEMS reflecting mirror and the grating,
wherein the temperature-phase compensator is arranged sequentially between the grating and the grid filter, and
wherein the grid filter is arranged sequentially between the temperature-phase compensator and the first beam collimating lens.

2. The broadband tunable external-cavity laser of claim 1 , also comprising a micro-shifter connected with the driving controller, to adjust position of the MEMS reflecting mirror according to signal from the driving controller.

3. The broadband tunable external-cavity laser of claim 2 , wherein, the MEMS reflecting mirror rotates mirror face thereof continuously according to the driving signal of the driving controller, and the MEMS reflecting mirror is of small mirror cantilever beam structure, the size of the mirror thereof is close to size of beam spot passing the grating.

4. The broadband tunable external-cavity laser of claim 1 , wherein the beam splitter and a photodetector are connected with the driving controller,
wherein the beam splitter splits a part of the collimating multi-wavelength light beam on the output side, and providing the split light beam to the photodetector, which is for detecting optical power of laser light beam split from the beam splitter and providing value of detected optical power to the driving controller, which is for adjusting the gain of the semiconductor optical gain device according to the value of the optical power provided from the photodetector.

5. The broadband tunable external-cavity laser of claim 4 , wherein, the MEMS reflecting mirror rotates mirror face thereof continuously according to the driving signal of the driving controller, and the MEMS reflecting mirror is of small mirror cantilever beam structure, the size of the mirror thereof is close to size of beam spot passing the grating.

6. The broadband tunable external-cavity laser of claim 1 , wherein the resonant cavity also comprises therein the grid filter for transmitting light beam with certain wavelength among broadband multi-channel light beams generated from the semiconductor optical gain device, and
wherein the grating is a diffraction grating, which separates the light beam with certain wavelength after passing the grid filter in spatial direction in a manner of dispersion.

7. The broadband tunable external-cavity laser of claim 6 , wherein resonant cavity also comprises therein the temperature-phase compensator for compensating for phase change due to temperature change of the resonant cavity of the broadband tunable external-cavity laser.

8. The broadband tunable external-cavity laser of claim 7 , wherein, after the broadband multi-channel optical signal is divided after passing through the grating, 90% or above of energy is concentrated on first level of diffraction beam.

9. The broadband tunable external-cavity laser of claim 7 , wherein, the MEMS reflecting mirror rotates mirror face thereof continuously according to the driving signal of the driving controller, and the MEMS reflecting mirror is of small mirror cantilever beam structure, the size of the mirror thereof is close to size of beam spot passing the grating.

10. The broadband tunable external-cavity laser of claim 6 , wherein, after the broadband multi-channel optical signal is divided after passing through the grating, 90% or above of energy is concentrated on first level of diffraction beam.

11. The broadband tunable external-cavity laser of claim 6 , wherein, the MEMS reflecting mirror rotates mirror face thereof continuously according to the driving signal of the driving controller, and the MEMS reflecting mirror is of small mirror cantilever beam structure, the size of the mirror thereof is close to size of beam spot passing the grating.

12. The broadband tunable external-cavity laser of claim 1 , wherein, the MEMS reflecting mirror rotates mirror face thereof continuously according to the driving signal of the driving controller, and the MEMS reflecting mirror is of small mirror cantilever beam structure, the size of the mirror thereof is close to size of beam spot passing the grating.

13. The broadband tunable external-cavity laser of claim 1 , wherein resonant cavity also comprises therein the convergent lens for converging light beam from the grating and inputting the converged light beam to the MEMS reflecting mirror, wherein, diffraction beam of first level of the grating is normal incident to the convergent lens.

14. The broadband tunable external-cavity laser of claim 1 , wherein, the driving controller is for driving a driving side of the MEMS reflecting mirror by a triangular-wave voltage.

15. The broadband tunable external-cavity laser of claim 1 , wherein, total optical distance Δ within the cavity of the broadband tunable external-cavity laser conforms to the following equation:
Δ= L 1· n 1+ L 2· n 2+ L 9· n 9+ L 5· n 5+ L 6· n 6+ L 7· n 7+ La· 1,

wherein, L1 is round trip distance of light in the semiconductor optical gain device; n1 is refractive index of the semiconductor optical gain device; L2 is the round trip distance of light in the collimating lens; n2 is refractive index of the collimating lens; L5 is equivalent round trip distance of light in the grid filter; n5 is refractive index of the grid filter; L6 is round trip distance of light in the grating; n6 is equivalent refractive index of light which passes through the grating; L7 is round trip distance of light in the convergent lens; n7 is refractive index of the convergent lens; n9 and L9 are refractive index and thickness of the temperature-phase compensator respectively; La and 1 are total air path length that light passes through in the resonant cavity and air refractive index respectively.

16. The broadband tunable external-cavity laser of claim 15 , wherein, Δ=Leff·neff+L9·n9, and δ(L9·n9)=−δ(Leff·neff),
wherein Leff·neff=L1·n1+L2·n2+L5·n5+L6·n6+L7·n7+La·1, δ(L9·n9) repres

Assignees

• Accelink Tech Co Ltd

Inventors

• Fu Yanfeng
• Luo Yong
• Zhang Di
• Tang Xuesheng
• Qian Kun
• Tang Yi
• Hu Shenglei
• Hu Qianggao

Classifications

• H01S3/105

  by controlling the mutual position or the reflecting properties of the reflectors of the cavity {, e.g. by controlling the cavity length}({H01S3/10076}, H01S3/13 take precedence) · CPC title

• H01S5/143 Primary

  Littman-Metcalf configuration, e.g. laser - grating - mirror · CPC title

• H01S5/068

  Stabilisation of laser output parameters (H01S5/0625 takes precedence) · CPC title

• H01S5/141

  using a wavelength selective device, e.g. a grating or etalon (H01S5/146 takes precedence) · CPC title

• H01S3/08086

  Multiple-wavelength emission · CPC title