Method of negative tone development using a copolymer multilayer electrolyte and articles made therefrom

Patent metadata

Field	Value
Publication number	US-9910355-B2
Application number	US-201615223995-A
Country	US
Kind code	B2
Filing date	Jul 29, 2016
Priority date	Jul 29, 2016
Publication date	Mar 6, 2018
Grant date	Mar 6, 2018

Abstract

Disclosed herein is a method, comprising disposing a first composition on a substrate, wherein the first composition comprises a first block copolymer comprising a first block and a second block, wherein the first block comprises a repeat unit containing a hydrogen acceptor or a hydrogen donor, and the second block comprises a repeat unit containing a blocked donor when the repeat unit of the first block is a hydrogen acceptor, or a blocked acceptor when the repeat unit of the first block is a hydrogen donor; and a solvent; and deprotecting the blocked acceptor or the blocked donor with a deprotecting agent.

First claim

What is claimed is:

1. A method, comprising:
disposing a first composition on a substrate, wherein the first composition comprises:
a first block copolymer comprising a first block and a second block, wherein the first block comprises a repeat unit containing a hydrogen acceptor or a hydrogen donor, and the second block comprises a repeat unit containing a blocked donor when the repeat unit of the first block is a hydrogen acceptor, or a blocked acceptor when the repeat unit of the first block is a hydrogen donor; and a solvent; and
deprotecting the blocked acceptor or the blocked donor with a deprotecting agent.

2. The method of claim 1 , further comprising removing residual first composition from the substrate before deprotecting the blocked acceptor or the blocked donor, leaving a coating of the first block copolymer over the substrate.

3. The method of claim 1 , further comprising:
disposing a second composition on the substrate, wherein the second composition is the same or different from the first composition and comprises a second block copolymer comprising a first block and a second block, wherein the first block comprises a repeat unit containing a hydrogen acceptor or a hydrogen donor, and the second block comprises a repeat unit containing a blocked donor when the repeat unit of the first block is a hydrogen acceptor, or a blocked acceptor when the repeat unit of the first block is a hydrogen donor; and a solvent.

4. The method of claim 3 , further comprising removing residual first composition from the substrate before deprotecting the blocked acceptor or the blocked donor of the first composition, leaving a coating of the first block copolymer over the substrate, wherein the disposing of the second composition is conducted after deprotecting the blocked acceptor or the blocked donor of the first composition.

5. The method of claim 4 , further comprising removing residual second composition from the substrate, and deprotecting the blocked acceptor or the blocked donor of the second composition, leaving a coating of the second block copolymer over the coating of the first block copolymer.

6. The method of claim 1 , wherein the first block copolymer further comprises a block of a neutral polymer disposed between the first block and the second block.

7. The method of claim 1 , wherein the repeat unit of the first block of the first block copolymer contains a hydrogen acceptor.

8. The method of claim 1 , wherein the repeat unit of the first block of the first block copolymer contains a hydrogen donor.

9. The method of claim 1 , where the substrate is a semiconductor substrate comprising a photoresist pattern on which the first layer is disposed, wherein the first block of the first block copolymer is bonded to the photoresist pattern.

10. The method of claim 9 , wherein the photoresist pattern is formed by a negative tone development process, wherein the negative tone development process comprises applying a resist to the substrate, exposing a portion of resist to radiation, and removing an unexpected portion of resist by a developer.

Assignees

• Dow Global Technologies Llc
• Rohm & Haas Elect Mat

Inventors

• Hustad Phillip D
• Park Jong
• Zhang Jieqian
• Jain Vipul
• Sung Jin Wuk

Classifications

• H10P76/2041

  Photolithographic processes · CPC title

• H10P76/204

  of organic photoresist masks · CPC title

• G03F7/0397

  the macromolecular compound having an alicyclic moiety in a side chain · CPC title

• C08F2438/03

  Use of a di- or tri-thiocarbonylthio compound, e.g. di- or tri-thioester, di- or tri-thiocarbamate, or a xanthate as chain transfer agent, e.g . Reversible Addition Fragmentation chain Transfer [RAFT] or Macromolecular Design via Interchange of Xanthates [MADIX] · CPC title

• G03F7/405

  Treatment with inorganic or organometallic reagents after imagewise removal · CPC title