Composition and method for polishing memory hard disks

Patent metadata

Field	Value
Publication number	US-9909032-B2
Application number	US-201414156201-A
Country	US
Kind code	B2
Filing date	Jan 15, 2014
Priority date	Jan 15, 2014
Publication date	Mar 6, 2018
Grant date	Mar 6, 2018

Abstract

The invention provides a chemical-mechanical polishing composition containing aluminate-modified silica particles, a polyacrylamide, a heterocyclic film-forming agent, and water. The invention also provides a method of chemically-mechanically polishing a substrate, especially a nickel-phosphorous substrate, by contacting a substrate with a polishing pad and the chemical-mechanical polishing composition, moving the polishing pad and the polishing composition relative to the substrate, and abrading at least a portion of the substrate to polish the substrate.

First claim

The invention claimed is:

1. A method of chemically-mechanically polishing a substrate, which method comprises:
(i) providing a substrate,
(ii) providing a polishing pad,
(iii) providing a polishing composition comprising:
(a) about 0.001 wt. % to about 10 wt. % of aluminate-modified silica particles,
(b) about 1 ppm to about 1000 ppm of a polyacrylamide, wherein the polyacrylamide has a molecular weight of about 500 g/mol to about 15,000 g/mol,
(c) optionally, a heterocyclic film-forming agent, and
(d) water,

wherein the polishing composition has a pH of about 1 to about 3, and wherein the polishing composition further comprises about 0.1 wt. % to about 2 wt. % of a chelating agent, wherein the chelating agent is selected from the group consisting of glycine and alanine,
(iv) contacting a surface of the substrate with the polishing pad and the polishing composition, and
(v) abrading at least a portion of the surface of the substrate to remove at least a portion of the surface of the substrate to polish the surface of the substrate, wherein the substrate comprises at least one layer of nickel-phosphorous, and wherein abrading at least a portion of the surface of the substrate removes at least some nickel-phosphorous from the surface of the substrate to polish the surface of the substrate.

2. The method of claim 1 , wherein the aluminate-modified silica particles are silica particles treated with an aluminum salt and potassium hydroxide.

3. The method of claim 1 , wherein the aluminate-modified silica particles in the polishing composition have a maximum in a particle size distribution of from about 5 nm to about 60 nm.

4. The method of claim 1 , wherein the polishing composition comprises about 50 ppm to about 500 ppm of the polyacrylamide.

5. The method of claim 1 , wherein the heterocyclic film-forming agent is present and is benzotriazole.

6. The method of claim 5 , wherein the polishing composition comprises about 10 ppm to about 100 ppm of benzotriazole.

7. The method of claim 1 , wherein the substrate is a nickel-phosphorous coated aluminum memory disk.

Assignees

• Cabot Microelectronics Corp

Inventors

• Palanisamy Chinnathambi Selvaraj
• White Michael

Classifications

• H10P52/403

  of conductive or resistive materials · CPC title

• H10P52/402

  of semiconductor materials · CPC title

• C09G1/02 Primary

  containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)} · CPC title

• G11B5/8404

  manufacturing base layers · CPC title

• C09G1/04

  Aqueous dispersions (C09G1/02 takes precedence) · CPC title