Method of producing a freestanding thin film of nano-crystalline graphite

US9908778B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9908778-B2
Application numberUS-201414560919-A
CountryUS
Kind codeB2
Filing dateDec 4, 2014
Priority dateDec 4, 2013
Publication dateMar 6, 2018
Grant dateMar 6, 2018

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A freestanding thin film of nano-crystalline graphite is described, as well as a method of producing a freestanding thin film of nano-crystalline graphite including: providing a freestanding thin film of amorphous carbon, heating the freestanding thin film to a high temperature in an inert atmosphere or in a vacuum; and allowing the freestanding thin film to cool down, as a result of which a freestanding thin film of nano-crystalline graphite is formed. The films can be used, for example, as phase plates in a Transmission Electron Microscope.

First claim

Opening claim text (preview).

The invention claimed is: 1. A method of producing a freestanding thin film of nano-crystalline graphite, the method comprising the steps of: providing a freestanding thin film of amorphous carbon, locally heating the freestanding thin film to a high temperature in an inert atmosphere or in a vacuum, allowing the freestanding thin film to cool down; and as a result of which a freestanding thin film of nano-crystalline graphite is formed. 2. The method of claim 1 in which the local heating is performed by irradiating the freestanding thin film with a laser beam. 3. The method of claim 2 in which the wavelength of the laser, the power of the laser, the size of the irradiated area and the thickness of the thin film are such that the free-standing thin film absorbs locally between 0.1 MW/m 2 and 20 MW/m 2 . 4. The method of claim 1 in which during local heating the temperature of the freestanding thin film rises locally to between 1000 K and 3700 K. 5. The method of claim 1 in which the freestanding thin film is locally heated for at least 1 second. 6. The method of claim 1 in which the freestanding thin film has a thickness of less than 1 μm. 7. The method of claim 1 in which the freestanding thin film is allowed to cool down in an environment of less than 500 K. 8. The method of claim 1 in which the freestanding thin film is allowed to cool down to a temperature below 1000 K in less than 1 ms. 9. The method of claim 1 in which the freestanding thin film is supported by a TEM grid. 10. The method of claim 1 , the method further comprising the additional step of forming one or more holes in the film for passing beams of undiffracted or diffracted electrons, as a result of which a phase plate or phase mask for a transmission electron microscope is formed. 11. A phase plate for a transmission electron microscope, the phase plate comprising or made of a freestanding thin film of nano-crystalline graphite, wherein the freestanding thin film of nano-crystalline graphite comprises a multiplicity of layers. 12. A transmission electron microscope comprising the phase plate of claim 11 . 13. The method of claim 10 , wherein the one or more holes are formed by a method selected from the group of ion beam milling, gas-assisted electron beam etching, and laser beam irradiation. 14. The method of claim 1 , wherein, after processing, the presence of a diffraction ring at 0.334 nm due to stacked layers, characteristic of normal graphitic carbon, is substantially reduced or eliminated. 15. The method of claim 1 , wherein the film is cleaned before processing by pre-heating in a vacuum, preferably to a temperature of approximately 250° C. 16. The phase plate of claim 11 , wherein the crystal size in the nano-crystalline graphite is less than 100 nm. 17. A method of observing a sample in a transmission electron microscope, the method comprising: forming a freestanding nano-crystalline graphite film in accordance with claim 1 ; and directing a portion of an electron beam through the nano-crystalline graphite film, the nano-crystalline graphite film shifting the phase of the portion of the electron beam, wherein the freestanding thin film of nano-crystalline graphite comprises a multiplicity of layers. 18. The method of claim 17 , in which directing a portion of an electron beam through the nano-crystalline graphite film comprises directing a portion of an electron beam through the nano-crystalline graphite film in a diffraction plane of the transmission microscope, or an image of the diffraction plane. 19. A phase plate for a transmission electron microscope made in accordance with the method of claim 1 , wherein the freestanding thin film of nano-crystalline graphite comprises a multiplicity of layers. 20. The phase plate of claim 11 further comprising one or more holes in the free stranding film of nano-crystalline graphite for passing beams of undiffracted electrons. 21. The phase plate of claim 19 wherein the freestanding thin film of nano-crystalline graphite has a thickness of between about 19.9 nm and 30.8 nm.

Assignees

Inventors

Classifications

  • Preparation · CPC title

  • H01J37/20Primary

    Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support · CPC title

  • Electron or ion microscopes; Electron or ion diffraction tubes · CPC title

  • for cutting or drilling · CPC title

  • Optical {, image processing} or photographic arrangements associated with the tube · CPC title

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What does patent US9908778B2 cover?
A freestanding thin film of nano-crystalline graphite is described, as well as a method of producing a freestanding thin film of nano-crystalline graphite including: providing a freestanding thin film of amorphous carbon, heating the freestanding thin film to a high temperature in an inert atmosphere or in a vacuum; and allowing the freestanding thin film to cool down, as a resul…
Who is the assignee on this patent?
Fei Co, Max Planck Gesellschaft
What technology area does this patent fall under?
Primary CPC classification H01J37/20. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Mar 06 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).