Free layer, magnetoresistive cell, and magnetoresistive random access memory device having low boron concentration region and high boron concentration region, and methods of fabricating the same

Patent metadata

Field	Value
Publication number	US-9905753-B2
Application number	US-201615157399-A
Country	US
Kind code	B2
Filing date	May 17, 2016
Priority date	Sep 17, 2015
Publication date	Feb 27, 2018
Grant date	Feb 27, 2018

Abstract

A method of forming a magnetoresistive memory device includes forming a ferromagnetic layer, forming a tunneling barrier layer on the ferromagnetic layer, forming a first preliminary free magnetic layer (free layer) containing boron (B) on the tunneling barrier layer, forming a first buffer layer on the first preliminary free layer, performing a first annealing process to transition the first preliminary free layer to form a second preliminary free layer and the first buffer layer to form a first boride layer, performing an etching process to remove the first boride layer, forming a second buffer layer on the second preliminary free layer, performing a second annealing process to transition the second preliminary free layer to form a free layer and the second buffer layer to form a second boride layer, and performing an oxidation process to transition the second boride layer to an oxide layer.

First claim

What is claimed is:

1. A method of forming a magnetoresistive memory device, the method comprising:
forming a ferromagnetic layer;
forming a tunneling barrier layer on the ferromagnetic layer;
forming a first preliminary free magnetic layer containing boron (B) on the tunneling barrier layer;
forming a first buffer layer on the first preliminary free magnetic layer;
performing a first annealing process to transition the first preliminary free magnetic layer to a second preliminary free magnetic layer and the first buffer layer to form a first boride layer;
performing an etching process to remove the first boride layer;
forming a second buffer layer on the second preliminary free magnetic layer;
performing a second annealing process to transition the second preliminary free magnetic layer to form a free magnetic layer and the second buffer layer to form a second boride layer; and
performing an oxidation process to transition the second boride layer to be an oxide layer.

2. The method of claim 1 , wherein a concentration of boron (B) in the second preliminary free magnetic layer is less than a concentration of boron (B) in the first preliminary free magnetic layer.

3. The method of claim 1 , wherein the first preliminary free magnetic layer includes cobalt iron boron (CoFeB).

4. The method of claim 1 , wherein the free magnetic layer comprises:
a first region having a relatively low concentration of boron (B), the first region being disposed in the free magnetic layer close to the tunneling barrier layer; and
a second region having a relatively high concentration of boron (B), the second region being disposed in the free magnetic layer far from the tunneling barrier layer.

5. The method of claim 4 , wherein the first region and the second region have a gradually gradated concentration of boron (B).

6. The method of claim 1 , wherein the first buffer layer and the second buffer layer include a metal having a lower boride-forming energy that is than that of cobalt (Co) and iron (Fe).

7. The method of claim 6 , wherein the first buffer layer includes any one of tantalum (Ta), hafnium (Hf), zirconium (Zr), titanium (Ti), vanadium (V), yttrium (Y), scandium (Sc), molybdenum (Mo) and magnesium (Mg).

8. The method of claim 6 , wherein the second buffer layer includes any one of tantalum (Ta), hafnium (Hf), zirconium (Zr), titanium (Ti), vanadium (V), yttrium (Y), scandium (Sc), molybdenum (Mo) and magnesium (Mg).

9. The method of claim 1 , wherein the oxide layer includes any one of tantalum oxide (TaO), zirconium oxide (ZrO), titanium oxide (TiO), vanadium oxide (VO), yttrium oxide (YO), scandium oxide (ScO), molybdenum oxide (MoO) and magnesium oxide (MgO).

10. The method of claim 1 , wherein the oxide layer includes boron (B).

11. The method of claim 1 , wherein forming the ferromagnetic layer comprises:
forming a seed layer;
forming a pinning layer on the seed layer;
forming an anti-ferromagnetic layer on the pinning layer; and
forming a pinned layer on the anti-ferromagnetic layer.

12. The method of claim 11 , wherein the seed layer includes tantalum (Ta), ruthenium (Ru) or iridium (Ir).

13. The method of claim 11 , wherein the pinning layer includes at least one of a cobalt platinum (CoPt) layer, a cobalt palladium (CoPd) layer, an alloy layer of cobalt platinum (CoPt) and cobalt palladium (CoPd), and a multilayer in which a cobalt platinum (CoPt) layer and a cobalt palladium (CoPd) layer are stacked.

14. The method of claim 11 , wherein the anti-ferromagnetic layer includes ruthenium (Ru).

15. The method of claim 11 , wherein the pinned layer includes CoFeB.

16. The method of claim 1 , wherein the tunneling barrier layer includes magnesium oxide (MgO).

17. The method of claim 16 , wherein forming the tunneling barrier layer comprises:
forming a magnesium (Mg) layer; and
oxidizing the magnesium (Mg) layer.

18. The method of claim 1 , further comprising:
forming a capping layer on the oxide layer; and
forming a magnetoresistive cell by forming a hardmask on the capping layer.

19. A method of forming a magnetoresistive memory device, the method comprising:
forming a ferromagnetic layer;
forming a tunneling barrier layer on the ferromagnetic layer;
forming a first preliminary free magnetic layer containing boron (B) on the tunneling barrier layer;
forming a first buffer layer on the first preliminary free magnetic layer;
performing a first annealing process to transition the first preliminary free magnetic layer to a second preliminary free magnetic layer and the first buffer layer to form a first boride layer;
performing a first etching process to remove the first boride layer;
forming a second buffer layer on the second preliminary free magnetic layer;
performing a second annealing process to transition the second preliminary free magnetic layer to form a free magnetic layer and the second buffer layer to form a second boride layer;
performing a second etching process to remove the second boride layer; and
forming an oxide layer on the free magnetic layer.

20. A method of forming a magnetoresistive memory device, the method comprising:
forming a ferromagnetic layer on a substrate,
the ferromagnetic layer comprising a first surface and a second surface that is opposite the first surface of the ferromagnetic layer;
forming a tunnel barrier layer on the ferromagnetic layer,
the tunnel barrier layer comprising a first surface and a second surface that is opposite the first surface of the tunnel barrier layer,
the first surface of the tunnel barrier layer being proximate to the second surface of the ferromagnetic layer; and
forming a free magnetic layer on the tunnel barrier layer after the forming of the tunnel barrier layer,
the free magnetic layer comprising a first surface and a second surface that is opposite the first surface of the free magnetic layer,
the first surface of the free magnetic layer being proximate to the second surface of the tunnel barrier layer,
the free magnetic layer further comprising a first region that is proximate to the second surface of the tunnel barrier layer and a second region that is distal to the second surface of the tunnel barrier layer, and the first region comprising a concentration of boron that is less that a concentration of boron of the second region.

Assignees

• Lee Joonmyoung
• Jang Youngman
• Kim Kiwoong
• Park Yongsung
• Samsung Electronics Co Ltd

Inventors

• Lee Joonmyoung
• Jang Youngman
• Kim Kiwoong
• Park Yongsung

Classifications

• G11C11/161 Primary

  details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell · CPC title

• H01L43/12 Primary

  Electricity · mapped topic

• H01L43/10

  Electricity · mapped topic

• H01L43/08

  Electricity · mapped topic

• H01L27/228

  Electricity · mapped topic