Magnetic-tunnel-junction devices for a magnetic-field sensor
US-2024389467-A1 · Nov 21, 2024 · US
Perpendicular MTJ stacks with magnetic anisotropy enhancing layer and crystallization barrier layer
US8980650B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8980650-B2 |
| Application number | US-201414454682-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 7, 2014 |
| Priority date | Sep 26, 2012 |
| Publication date | Mar 17, 2015 |
| Grant date | Mar 17, 2015 |
How to read this patent
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
- Title
What the patent document calls the invention.
- Abstract
A short plain-language summary of the technical disclosure.
- Assignees and inventors
Who owns or filed the patent and who is credited as inventor.
- Key dates
Filing, priority, publication, and grant dates set the timeline.
- First independent claim
The legal scope of protection — read this for what is actually claimed.
- CPC / IPC classifications
Technology tags used to group this patent with similar filings.
- Citations and related patents
Prior art links and similar publications in this corpus.
Abstract
Official abstract text for this publication.
Magnetic tunnel junctions (MTJ) suitable for spin transfer torque memory (STTM) devices, include perpendicular magnetic layers and one or more anisotropy enhancing layer(s) separated from a free magnetic layer by a crystallization barrier layer. In embodiments, an anisotropy enhancing layer improves perpendicular orientation of the free magnetic layer while the crystallization barrier improves tunnel magnetoresistance (TMR) ratio with better alignment of crystalline texture of the free magnetic layer with that of a tunneling layer.
First claim
Opening claim text (preview).
What is claimed is: 1. A method of forming a perpendicular magnetic tunneling junction (MTJ), comprising: depositing a dielectric tunneling layer with (001) crystal texture; depositing an amorphous CoFeB free magnetic layer over the tunneling layer; depositing a crystallization barrier layer over the amorphous CoFeB free magnetic layer; depositing a magnetic anisotropy enhancing layer having (111) crystal texture over the crystallization barrier layer, and annealing the di…
Assignees
Inventors
Classifications
Patent family
Related publications grouped by family.
External sources
Next steps
Free tools are coming soon. Tell us what you want to track and we'll notify you.
Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US8980650B2 cover?
- Magnetic tunnel junctions (MTJ) suitable for spin transfer torque memory (STTM) devices, include perpendicular magnetic layers and one or more anisotropy enhancing layer(s) separated from a free magnetic layer by a crystallization barrier layer. In embodiments, an anisotropy enhancing layer improves perpendicular orientation of the free magnetic layer while the crystallization barrier improves …
- Who is the assignee on this patent?
- Oguz Kaan, Doczy Mark L, Doyle Brian, and 5 more
- What technology area does this patent fall under?
- Primary CPC classification H10N50/80. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Mar 17 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).